LINEAR & POWER AMPLIFIER - CHIP
1
HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Functional Diagram
Features
Typical Applications
General Description
The HMC451 is a general purpose GaAs PHEMT
MMIC Medium Power Amplier which operates
between 5 and 20 GHz. The amplier provides
22 dB of gain, +22 dBm of saturated power at 24%
PAE from a +5V supply. Consistent gain and output
power across the operating band make it possible to
use a common driver/LO amplier approach in mul-
tiple radio bands. The HMC451 amplier can easily
be integrated into Multi-Chip-Modules (MCMs) due
to its small (1.61mm2) size, single supply operation
and DC blocked I/Os. All data is tested with the chip
in a 50 Ohm test xture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length <0.31mm
(<12 mils).
Gain: 22 dB
Saturated Output Power: +22 dBm @ 24% PAE
Output IP3: +30 dBm
Single Positive Supply: +5V @ 127mA
50 Ohm Matched Input/Output
Small Size: 1.27 x 1.27 x 0.1 mm
Electrical Specications, TA = +25° C, Vdd1, Vdd2 = +5V
The HMC451 is ideal for use as a driver amplier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• LO Driver for HMC Mixers
• Military & Space
Parameter Min. Typ. Max. Min. Typ. Max. Min. Ty p. Max. Units
Frequency Range 5 - 15 15 - 18 18 - 20 GHz
Gain 19 22 17 20 15 18 dB
Gain Variation Over Temperature 0.03 0.04 0.03 0.04 0.03 0.04 dB/ °C
Input Return Loss 14 11 8dB
Output Return Loss 16 11 8dB
Output Power for 1 dB
Compression (P1dB) 17 20 17 20 17 20 dBm
Saturated Output Power (Psat) 22 21 21 dBm
Output Third Order Intercept (IP3) 32 30 30 dBm
Noise Figure 7 6 6.5 dB
Supply Current (Idd) 127 150 127 150 127 150 mA
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIER - CHIP
2
HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Output P1dB vs. Temperature Output Psat vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
3 5 7 9 11 13 15 17 19 21 23 25
S21 S11 S22
RESPONSE (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
24
28
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIER - CHIP
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HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Power Compression @ 10 GHz
Output IP3 vs. Temperature Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature
Power Compression @ 20 GHz
0
4
8
12
16
20
24
28
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
24
28
-18 -14 -10 -6 -2 2 6
Pout (dBm) Gain (dB) PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
18
22
26
30
34
38
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
IP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
4 6 8 10 12 14 16 18 20 22
+25C +85C -55C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
4 7 10 13 16 19 22
+25C +85C -55C
ISOLATION (dB)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
4.5 5 5.5
Gain P1dB Psat
GAIN (dB), P1dB (dBm), Psat (dBm)
Vdd SUPPLY VOLTAGE (V)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIER - CHIP
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HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +5.5 Vdc
RF Input Power (RFIN)(Vdd = +5Vdc) +10 d Bm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 13 mW/°C above 85 °C) 1.2 W
Thermal Resistance
(channel to die bottom) 75 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A, passed 250V
Vdd (V) Idd (mA)
+4.5 125
+5.0 127
+5.5 129
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown above
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIER - CHIP
5
HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Assembly Diagram
Pad Descriptions
Pad Number Function Description Pin Schematic
1RFIN This pad is AC coupled and matched to 50 Ohms.
1, 3 Vdd1, Vdd2 Power Supply Voltage for the amplier. External bypass
capacitors of 100 pF and 0.1 µF are required.
4RFOUT This pad is AC coupled and matched to 50 Ohms.
Die Bottom GND Die Bottom must be connected to RF/DC Ground.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LINEAR & POWER AMPLIFIER - CHIP
6
HMC451
v04.0118
GAAS PHEMT MMIC MEDIUM
POWER AMPLIFIER, 5 - 20 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD pro-
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched
with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is rec-
ommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started
on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
