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DMN61D9UW

Document number: DS38027 Rev. 2 - 2

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www.diodes.com

November 2015

DMN61D9UW

NEW PROD UCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(ON) max

ID max

TA = +25°C

60V

2Ω @ VGS = 5.0V

340mA

2.5Ω @ VGS = 2.5V

300mA

Description

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)) and yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Applications

 Motor Control

 Power Management Functions

 Backlighting

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 ESD Protected Up To 2kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin Annealed over Alloy 42

Leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN61D9UW-7

SOT323

3,000/Tape & Reel

DMN61D9UW-13

SOT323

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

Code

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

SOT323

Top View

ESD protected up to 2kV

Top View

Equivalent Circuit

Gate Protection

Diode

1AC= Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: C = 2015)

M = Month (ex: 9 = September)

DMN61D9UW

Document number: DS38027 Rev. 2 - 2

2 of 6

www.diodes.com

November 2015

DMN61D9UW

NEW PROD UCT

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 5.0V

Steady

State

TA = +25°C

TA = +70°C

340

270

t<5s

TA = +25°C

TA = +70°C

400

300

Maximum Continuous Body Diode Forward Current (Note 6)

0.4

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)

IDM

1.2

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

320

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

393

°C/W

t<5s

306

Total Power Dissipation (Note 6)

440

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

289

°C/W

t<5s

235

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

1.0

µA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

µA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

0.5

—

1.0

VDS = 10V, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

1.2

1.6

2.5

2.0

2.5

3.5

VGS = 5.0V, ID = 0.05A

VGS = 2.5V, ID = 0.05A

VGS = 1.8V, ID = 0.05A

Forward Transconductance

|Yfs|

200

—

VDS =10V, ID = 0.2A

Diode Forward Voltage

VSD

—

0.75

1.4

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

28.5

—

VDS = 30V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

3.9

—

Reverse Transfer Capacitance

Crss

—

2.5

—

Gate Resistance

—

f = 1MHz , VGS = 0V, VDS = 0V

Total Gate Charge

—

0.4

—

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs

—

0.1

—

Gate-Drain Charge

Qgd

—

0.1

—

Turn-On Delay Time

tD(ON)

—

2.1

—

VDD = 30V, VGS = 10V,

RG = 25Ω, ID = 200mA

Turn-On Rise Time

—

1.8

—

Turn-Off Delay Time

tD(OFF)

—

14.4

—

Turn-Off Fall Time

—

8.4

—

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMN61D9UW

Document number: DS38027 Rev. 2 - 2

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November 2015

DMN61D9UW

NEW PROD UCT

0.0

0.2

0.4

0.6

0.8

1.0

0 1 2 3 4 5

I , DRAIN CURRENT (A)

V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

V = 2.5V

V = 3.0V

V = 10V

V = 4.5V

V = 2.0V

V = 1.8V

V = 1.5V

0.2

0.4

0.6

0.8

0.5 1 1.5 2 2.5 3

I , DRAIN CURRENT (A)

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

V = 5.0V

T = 150 C

A

T = 125 C

AT = 85C

A

T = 25 C

A

T = -55 C

A

0.5

1.5

2.5

3.5

0 0.2 0.4 0.6 0.8 1

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V = 2.5V

V = 5.0V

1.5

2.5

0 5 10 15 20

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

I = 50mA

0.5

1.5

2.5

3.5

4.5

0 0.2 0.4 0.6 0.8 1

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

I , DRAIN SOURCE CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

V = 4.5V

T = -55 C

A

T = 25 C

A

T = 85C

A

T = 125 C

A

T = 150 C

A

0.6

0.8

1.2

1.4

1.6

1.8

2.2

-50 -25 0 25 50 75 100 125 150

R , DRAIN-SOURCE

DS(ON)

ON-RESISTANCE (NORMALIZED)

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Junction

Temperature

V = 2.5V

I = 50mA

V = 5.0V

I = 50mA

DMN61D9UW

Document number: DS38027 Rev. 2 - 2

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November 2015

DMN61D9UW

NEW PROD UCT

100

0 5 10 15 20 25 30 35 40

C , JUNCTION CAPACITANCE (pF)

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

Ciss

Coss

Crss

f = MH

0.5

1.5

2.5

3.5

4.5

0 0.1 0.2 0.3 0.4 0.5

V GATE THRESHOLD VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

gFigure 10 Gate Charge

V = 10V

I = 250mA

0.001

0.01

0.1

0.1 1 10 100

I , DRAIN CURRENT (A)

V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

RDS(on)

Limited

P = 10s

WP = 1s

P = 100ms

WP = 10ms

WP = 1ms

P = 100µs

T = 150°C

J(max)

T = 25°C

V = 5V

Single Pulse

DUT on 1 * MRP Board

f=1MHz

DMN61D9UW

Document number: DS38027 Rev. 2 - 2

5 of 6

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November 2015

DMN61D9UW

NEW PROD UCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version

0.001

0.01

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIMES (sec)

Figure 12 Transient Thermal Resistance

R (t) = r(t) * R

 JA JA

R = 391°C/W

JA

Duty Cycle, D = t1/ t2

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

D = 0.9

SOT323

Dim

Min

Max

Typ

0.00

0.10

0.05

0.90

1.00

0.95

0.25

0.40

0.30

0.10

0.18

0.11

1.80

2.20

2.15

2.00

2.20

2.10

1.15

1.35

1.30

0.650 BSC

1.20

1.40

1.30

0.375

0.475

0.425

0.25

0.40

0.30

8°

All Dimensions in mm

Dimensions

Value

(in mm)

0.650

1.300

0.470

0.600

2.500

E1E

Fe1

Y1 G

DMN61D9UW

Document number: DS38027 Rev. 2 - 2

6 of 6

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November 2015

DMN61D9UW

NEW PROD UCT

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

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