BY448 , BY458
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Rev. 1.8, 20-Feb-18 1Document Number: 86006
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High voltage rectification
• Efficiency diode in horizontal deflection circuits
949539
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Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BY458 BY458TR 5000 per 10" tape and reel 25 000
BY458 BY458TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY448 VR = 1500 V, IFAV = 2 A SOD-57
BY458 VR = 1200 V, IFAV = 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage See electrical characteristics BY448 VR = VRRM 1500 V
BY458 VR = VRRM 1200 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 30 A
Average forward current IFAV 2A
Junction temperature Tj140 °C
Storage temperature range Tstg -55 to +175 °C
Non repetitive reverse avalanche energy l(BR)R = 0.4 A ER10 mJ
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
BY448 , BY458
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 2Document Number: 86006
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT
Forward voltage IF = 3 A VF--1.6V
Reverse current VR = VRRM IR--3μA
VR = VRRM, Tj = 140 °C IR- - 140 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --2μs
Total reverse recovery time IF = 1 A, - dIF/dt = 0.05 A/μs trr - - 20 μs
0
20
40
80
60
100
120
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)949101
ll
TL = constant
0.001
0.01
0.1
1
10
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
16417
V
F
- Forward Voltage (V)
I
F
- Forward Current (A)
Tj = 150 °C
Tj = 25 °C
0
0.5
1.0
1.5
2.0
2.5
16418
0755025 125100 150
Tamb - Ambient Temperature (°C)
IFAV - Average Forward Current (A)
VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm
RthJA = 100 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150
16419
Tj - Junction Temperature (°C)
IR - Reverse Current (μA)
VR = VRRM
BY448 , BY458
www.vishay.com Vishay Semiconductors
Rev. 1.8, 20-Feb-18 3Document Number: 86006
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
16420 Tj - Junction Temperature (°C)
PR - Reverse Power Dissipation (mW)
VR = VRRM
PR - Limit at 100 % VR
PR - Limit at 80 % VR
0
5
10
15
20
25
30
35
0.1 1 10 100
16421
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 08-Feb-17 1Document Number: 91000
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