VN20AN011Y - STMicroelectronics

VN20AN

HIGH SIDE SMART POWER SOLID STATE RELAY

■OUTPUT CURRENT (CONTINUOUS):

33A @ Tc=25oC

■LOGIC LEVEL 5V COMPATIBLE INPUT

■THERMAL SHUT-DOWN

■UNDER VOLTAGE PROTECTION

■OPEN DRAIN DIAGNOSTIC OUTPUT

■FAST DEMAGNETIZATION OF INDUCTIVE

LOAD

DESCRIPTION

The VN20AN is a monolithic device made using

SGS-THOMSON Vertical Intelligent Power

Technology, intended for driving resistive or

inductive loads with one side grounded.

Built-in thermal shut-down protects the chip from

over temperature and short circuit. The diagnostic

output indicates an over temperature status.

Fast turn-off of inductive load is achieved by

negative (-18V) load voltage at turn-off.

September 1994

BLOCK DIAGRAM

TYPE VDSS RDS(on) IOUT VCC

VN20AN 60 V 0.05 Ω33 A 36 V

PENTAWATT

(vertical) PENTAWATT

(horizontal)

PENTAWATT

(in-line)

ORDER CODES:

PENTAWATT vertical VN20AN

PENTAWATT horizontal VN20AN (011Y)

PENTAWATT in-line VN20AN (012Y)

1/11

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V(BR)DSS Drain-Source Breakdown Voltage 60 V

IOUT Output Current (cont.) 33 A

IRReverse Output current -33 A

IIN Input Current ±10 mA

-VCC Reverse Supply Voltage -4 V

ISTAT Status Current (sink) ±10 mA

VESD Electrostatic discharge (1.5 kΩ, 100 pF) 2000 V

Ptot Power Dissipation at Tc≤25 oC100W

Junction Operating Temperature -40 to 150 oC

Tstg Storage Temperature -55 to 150 oC

CONNECTION DIAGRAM

CURRENT AND VOLTAGE CONVENTIONS

VN20AN

2/11

THERMAL DATA

Rthj-case

Rthj-amb Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max 1.25

oC/W

ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; Tcase =25

C unless otherwise specified)

POWER

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VCC * Supply Voltage -40 oC<T

j< 125 oC736V

on On State Resistance IOUT =14A

OUT =2A V

CC =30V T

j= 125 oC0.04 0.05

0.09 Ω

Ω

ISSupply Current Off State VCC =30V

On State VCC =30V

On State VCC =30V T

j=125o

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time Of

Output Current IOUT = 14 A Resistive Load

Input Rise Time < 0.1 µs30 µs

trRise Time Of Output

Current IOUT = 14 A Resistive Load

Input Rise Time < 0.1 µs65 µs

td(off) Turn-off Delay Time Of

Output Current IOUT = 14 A Resistive Load

Input Rise Time < 0.1 µs65 µs

tfFall Time Of Output

Current IOUT = 14 A Resistive Load

Input Rise Time < 0.1 µs25 µs

(di/dt)on Turn-on Current Slope IOUT =14A 25o

C<T

j<125o

OUT =I

OV 25 oC<T

j<125o

C0.5

1A/µs

A/µs

(di/dt)off Turn-off Current Slope IOUT =14A 25o

C<T

j<125o

OUT =I

OV 25 oC<T

j<125o

C1.5

4A/µs

A/µs

VDEMAG Inductive Load Clamp

Voltage IOUT =14A -40o

C<T

j<125o

C -24 -18 -14 V

LOGIC INPUT (-40 oC≤Tj≤125 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VIL Input Low Level

Voltage 0.8 V

VIH Input High Level

Voltage 2(*)V

I(hyst.) Input Hysteresis

Voltage 0.5 V

IIN Input Current VIN =5V

IN =2V

IN =0.8V 25

250 600

300 µA

µA

VICL Input Clamp Voltage IIN =10mA

IN =-10mA 5.5 6

-0.7 -0.3 V

VN20AN

3/11

ELECTRICAL CHARACTERISTICS (continued)

PROTECTION AND DIAGNOSTICS (-40 oC≤Tj≤125 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VSTAT Status Voltage Output

Low ISTAT =1.6mA 0.4 V

STAT Status Leakage Current VSTAT =5V 10 µA

USD Under Voltage Shut

Down 3.5 6 7 V

VSCL Status Clamp Voltage ISTAT =10mA

STAT =-10mA 5.5 6

-0.7 -0.3 V

IOV Over Current RLOAD <10mΩ80 A

Iav Average Current In

Short Circuit RLOAD <10mΩT

c=85o

C2.5A

DOFF Leakage Current VCC =30V 1 mA

TSD Thermal Shut-down

Temperature 140 oC

TRReset Temperature 125 oC

(*) The Vih is internally clamped at about 6V. It is possible to connect this pin to a higher voltagevia an external resistor

calculated to not exceed 10 mA at the input pin.

TRUTH TABLE

INPUT DIAGNOSTIC OUTPUT

Normal Operation L

Over-temperature H L L

Under-voltage X H L

WAVEFORMS

VN20AN

4/11

FUNCTIONAL DESCRIPTION

The device has a diagnistic output which

indicates over temperature conditions.

The truth table shows input, diagnostic output

status and output voltage level in normal

operation and fault conditions. The output signals

are processed by internal logic.

To protect the device against short circuit and

over current conditions, the thermal protection

turns the integrated Power MOS off at a minimum

junction temperature of 140 oC. When the

temperature returns to 125 oC the switch is

automatically turned on again. To ensure the

protection in all VCC conditions and in all the

junction temperature range it is necessary to limit

the voltage drop across Drain and Source (pin 3

and 5) at 28V accordinf to:

Vds =V

CC -I

OV *(R

i+R

w+R

)

where:

Ri= internal resistence of Power Supply

Rw= Wires resistance

Rl= Short Circuit resistance

Driving inductive loads, an internal function of the

device ensures the fast demagnetization with

typical voltage (Vdemag) of -18V.

This function allows the reduction of the power

dissipation according to the formula:

Pdem = 0.5 * Lload *(I

load)2* [(VCC +V

dem)/Vdem]*f

where f = Switcning Frequency

Based on this formula it is possible to know the

value of inductance and/or current to avoid a

thermal shut-down.

PROTECTING THE DEVICE AGAINST REVER-

SE BATTERY

The simpliest way to protect the device against a

continuous reverse battery voltage (-36V) is to

insert a Schottky diode between pin 1 (GND) and

ground, as shown in the typical application circuit

(Fig. 3). The consequences of the voltage drop

across this diode are as follows:

If the input is pulled to power GND, a negative

voltage of -Vfis seen by the device. (Vil,V

thresholds and Vstat are increased by Vfwith

respect to power GND).

The undervoltage shut-down level is increased by

Vf.

If there is no need for the control unit to handle

external analog signals referred to the power

GND, the best approach is to connect the

reference potential of the control unit to node [1]

(see application circuit in fig. 4), which becomes

the common signal GND for the whole control

board avoiding shift of Vih,V

il and Vstat. This

solution allows the use of a standard diode.

Over Current Test Circuit

VN20AN

5/11

Typical Application Circuit With Separate Signal Ground

Typical Application Circuit With A Schottky Diode For Reverse Supply Protection

VN20AN

6/11

RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage

RDS(on) vs Output Current Input voltages vs Junction Temperature

Output Current Derating

VN20AN

7/11

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.8 0.189

C 1.37 0.054

D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409

H3 10.05 10.4 0.396 0.409

L 17.85 0.703

L1 15.75 0.620

L2 21.4 0.843

L3 22.5 0.886

L5 2.6 3 0.102 0.118

L6 15.1 15.8 0.594 0.622

L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157

Dia 3.65 3.85 0.144 0.152

L3L5

Dia.

MM1

P010E

Pentawatt (vertical) MECHANICAL DATA

VN20AN

8/11

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.8 0.189

C 1.37 0.054

D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409

H3 10.05 10.4 0.396 0.409

L 14.2 15 0.559 0.590

L1 5.7 6.2 0244

L2 14.6 15.2 0.598

L3 3.5 4.1 0.137 0.161

L5 2.6 3 0.102 0.118

L6 15.1 15.8 0.594 0.622

L7 6 6.6 0.236 0.260

Dia 3.65 3.85 0.144 0.152

P010F

Pentawatt (horizontal) MECHANICAL DATA

VN20AN

9/11

DIM. mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.8 0.189

C 1.37 0.054

D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022

F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.2 3.4 3.6 0.126 0.134 0.142

G1 6.6 6.8 7 0.260 0.268 0.276

H2 10.4 0.409

H3 10.05 10.4 0.396 0.409

L2 23.05 23.4 23.8 0.907 0.921 0.937

L3 25.3 25.65 26.1 0.996 1.010 1.028

L5 2.6 3 0.102 0.118

L6 15.1 15.8 0.594 0.622

L7 6 6.6 0.236 0.260

Dia 3.65 3.85 0.144 0.152

P010D

Pentawatt (In- Line) MECHANICAL DATA

VN20AN

10/11

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information norforany infringementof patents or other rights of third partieswhich may results from its use. No

license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents inlife supportdevices or systems withoutexpress

written approval of SGS-THOMSON Microelectonics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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VN20AN

11/11