C
Power Semiconductors
OO LMOS
050-7208 Rev B 6-2014
APT106N60B2_LC6
MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
• UltraLowRDS(ON)
• LowMillerCapacitance
• UltraLowGateCharge,Qg
• AvalancheEnergyRated
• Extremedv/dtRated
• Dualdie(parallel)
• PopularT-MAXandTO-264Packages
SuperJunctionMOSFET
"COOLMOS™compriseanewfamilyoftransistorsdevelopedbyInneonTechnologiesAG."COOLMOS"isatrade-
markofInneonTechnologiesAG."
G
D
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Microsemi Website - http://www.microsemi.com
Symbol Parameter APT106N60B2_LC6 UNIT
VDSS Drain-Source Voltage 600 Volts
ID
Continuous Drain Current @ TC = 25°C 1106
Amps
Continuous Drain Current @ TC = 100°C 68
IDM Pulsed Drain Current 2318
VGS Gate-Source Voltage Continuous ±20 Volts
PDTotal Power Dissipation @ TC = 25°C 833 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 - to 150
°C
TLLead Temperature: 0.063" from Case for 10 Sec. 260
IAR Avalanche Current 218.6 Amps
EAR Repetitive Avalanche Energy 3 ( Id = 18.6A, Vdd = 50V ) 3.4
EAS Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V ) 2200 mJ
Symbol Characteristic/TestConditions MIN TYP MAX UNIT
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) 650 Volts
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 53A) 0.035 Ohms
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 50
µA
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 500
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±200 nA
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3.4mA) 2.5 3 3.5 Volts
TO-264
T-Max®
APT106N60B2C6
APT106N60LC6
APT106N60B2_LC6
600V 106A 0.035Ω
050-7208 Rev B 6-2014
APT106N60B2_LC6
DYNAMIC CHARACTERISTICS
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
1 Continuous current limited by package lead temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature
3 Repetitive avalanche causes additional power losses that can be calculated
as PAV = EAR*f . Pulse width tp limited by Tj max.
Microsemireservestherighttochange,withoutnotice,thespecicationsandinformationcontainedherein.
4 Pulse Test: P
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery.
7 Maximum 125°C diode commutation speed = di/dt 600A/µs
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
10-5 10-4 10-3 10-2 0.1 1 10
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE1,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
0.5
0.1
0.05
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
Symbol Characteristic TestConditions MIN TYP MAX UNIT
Ciss Input Capacitance VGS = 0V
VDS = 25V
f = 1 MHz
8390
pF
Coss Output Capacitance 7115
Crss Reverse Transfer Capacitance 229
QgTotal Gate Charge 5VGS = 10V
VDD = 300V
ID = 106A @ 25°C
308
nC
Qgs Gate-Source Charge 50
Qgd Gate-Drain ("Miller ") Charge 160
td(on) Turn-on Delay Time INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 106A @ 25°C
RG = 4.3Ω
25
ns
trRise Time 79
td(off) Turn-off Delay Time 277
tfFall Time 164
Eon Turn-on Switching Energy 6INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 106A, RG = 4.3Ω
2995
µJ
Eoff Turn-off Switching Energy 3775
Eon Turn-on Switching Energy 6INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID =106A, RG = 4.3Ω
4055
Eoff Turn-off Switching Energy 4200
Symbol Characteristic/TestConditions MIN TYP MAX UNIT
ISContinuous Source Current (Body Diode) 92 Amps
ISM Pulsed Source Current
2 (Body Diode) 318
VSD Diode Forward Voltage 4 (VGS = 0V, IS = -106A) 0.9 1.2 Volts
dv/dt Peak Diode Recovery dv/dt
715 V/ns
trr Reverse Recovery Time (IS = -106A, di/dt = 100A/µs) Tj = 25°C 1400 ns
Qrr Reverse Recovery Charge (IS = -106A, di/dt = 100A/µs) Tj = 25°C 45 µC
IRRM Peak Recovery Current (IS = -106A, di/dt = 100A/µs) Tj = 25°C 47 Amps
Symbol Characteristic MIN TYP MAX UNIT
RθJC Junction to Case 0.15 °C/W
RθJA Junction to Ambient 40
WTPackage Weight 0.22 oz
6.2 g
Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw 10 in·lbf
1.1 N·m
050-7208 Rev B 6-2014
APT106N60B2_LC6
0.1
1
10
100
1000
1 10 100 1000
TYPICALPERFORMANCECURVES
0.60
0.70
0.80
0.90
1.00
1.10
1.20
-50 0 50 100 150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50 0 50 100 150
0
0.40
0.80
1.20
1.60
2.00
0 50 100 150 200 250
0
20
40
60
80
100
120
25 50 75 100 125 150
0
20
40
60
80
100
120
140
0 1 2 3 4 5 6 7 8
0
25
50
75
100
125
150
175
200
225
0 5 10 15 20 25 30
VGS = 20V
TJ= 25°C
TJ= -55°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE2,LowVoltageOutputCharacteristics
IC, DRAIN CURRENT (A)
TJ= 125°C
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE3,TransferCharacteristics
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (C°)
FIGURE5,MaximumDrainCurrentvsCaseTemperature
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
FIGURE4,RDS(ON)vsDrainCurrent
TJ, JUNCTION TEMPERATURE (°C)
FIGURE6,BreakdownVoltagevsTemperature
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE8,ThresholdVoltagevsTemperature
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (C°)
FIGURE7,On-ResistancevsTemperature
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
VGS = 10V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
VGS = 10V @ 106A
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE9,MaximumSafeOperatingArea
100ms
100µs
10ms
1ms
15V
4.5V
5.5V
5V
6.0V
6.5V
7.0V
10V
RDS(on), DRAIN-TO-SOURCE ON RESISTANCE
050-7208 Rev B 6-2014
APT106N60B2_LC6
0
2000
4000
6000
8000
10000
12000
14000
0 10 20 30 40 50
0
50
100
150
200
250
0 50 100 150 200
1
10
100
200
0.3 0.5 0.7 0.9 1.1 1.3 1.5
0
50
100
150
200
250
300
350
400
0 50 100 150 200
0
2
4
6
8
10
12
14
0 100 200 300 400
0
10
100
1000
10,000
20,000
30,000
0 100 200 300 400 500
Ciss
TJ = =25°C
VDS=480V
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE10,CapacitancevsDrain-To-SourceVoltage
C, CAPACITANCE (pF)
VDS= 300V
Qg, TOTAL GATE CHARGE (nC)
FIGURE11,GateChargesvsGate-To-SourceVoltage
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID (A)
FIGURE13,DelayTimesvsCurrent
td(on) and td(off) (ns)
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE12,Source-DrainDiodeForwardVoltage
IDR, REVERSE DRAIN CURRENT (A)
ID (A)
FIGURE14,RiseandFallTimesvsCurrent
tr, and tf (ns)
RG, GATE RESISTANCE (Ohms)
FIGURE16,SwitchingEnergyvsGateResistance
SWITCHING ENERGY (uJ)
ID (A)
FIGURE15,SwitchingEnergyvsCurrent
SWITCHING ENERGY (μJ)
Coss
Crss
TJ= +150°C
ID = 106A
VDD = 400V
RG = 4.3 Ω
TJ = 125°C
L = 100µH
td(on)
td(off)
VDD = 400V
RG = 4.3Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
Eon
Eoff
VDD = 400V
RG = 4.3Ω
TJ = 125°C
L = 100µH
tr
tf
Eon
Eoff
VDD = 400V
ID = 106A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
VDS= 120V
TYPICALPERFORMANCECURVES
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Drai n
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drai n
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drai n
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
TO-264(L)PackageOutline
T-MAX®(B2)PackageOutline
1.016(.040)
050-7208 Rev B 6-2014
APT106N60B2_LC6
TYPICALPERFORMANCECURVES
FIGURE17,Turn-onSwitchingWaveformsandDenitions FIGURE18,Turn-offSwitchingWaveformsandDenitions
I
C
D.U.T.
APT30DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
FIGURE19,InductiveSwitchingTestCircuit
TJ = 125°C
Drain Current
Drain Voltage
Gate Voltage
5%
10%
td(on)
90%
10%
tr
5%
Switching Energy
TJ = 125°C
Drain Voltage
Drain Current
Gate Voltage
Switching Energy
0
td(off)
10%
tf
90%
APT60DQ60
050-7208 Rev B 6-2014
APT106N60B2_LC6
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