AP3989I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Simple Drive Requirement Fast Switching Characteristic 600V RDS(ON) 0.68 ID G RoHS Compliant & Halogen-Free BVDSS 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, V GS @ 10V 10 A ID@TC=100 Continuous Drain Current, V GS @ 10V 5 A 40 A 39 W 50 mJ 10 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.2 /W 65 /W 1 201012012 AP3989I-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance 3 VGS=10V, ID=5A - - 0.68 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=5A - 4.5 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=9A - 48 77 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 10 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 20 - nC 3 td(on) Turn-on Delay Time VDD=300V - 16 - ns tr Rise Time ID=9A - 25 - ns td(off) Turn-off Delay Time RG=10,VGS=10V - 70 - ns tf Fall Time RD=33.3 - 35 - ns Ciss Input Capacitance VGS=0V - 2150 3440 pF Coss Output Capacitance VDS=25V - 355 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 28 - pF Min. Typ. IS=9A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=9A, VGS=0V - 570 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 9.7 - uC Notes: 1.Pulse width limited by Max junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=1mH , RG=25 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP3989I-HF 20 10 o T C =25 C 8 ID , Drain Current (A) ID , Drain Current (A) 16 12 5.0V 8 10V 7.0 V 6.0 V 5.0V o T C =150 C 10 V 7.0 V 6.0 V 6 4 V G = 4.0V 4 2 V G = 4 . 0V 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 Fig 1. Typical Output Characteristics 12.0 16.0 20.0 24.0 28.0 Fig 2. Typical Output Characteristics 2.8 1.2 I D =5A V G =10V 2.4 1.1 Normalized RDS(ON) Normalized BVDSS (V) 8.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1 2.0 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 -50 150 0 50 100 150 o o T j , Junction Temperature ( C) T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 1.5 8 1.3 T j =150 o C Normalized VGS(th) (V) 10 T j =25 o C IS(A) 6 4 1.1 0.9 0.7 2 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP3989I-HF 10 I D =9A V DS =480V C iss 2000 8 C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 3000 12 6 1000 4 2 C oss C rss 0 0 0 10 20 30 40 50 1 60 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 100 Operation in this area limited by RDS(ON) 100us ID (A) 10 1ms 10ms 1 100ms 0 1s DC T C =25 o C Single Pulse Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0 1 10 100 1000 0.00001 0.0001 0.001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4