GSBAT54T GSBAT54AT
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GSBAT54xT Series
Schottky Diode
■
Low forward voltage drop
■
Fast switching
■
PN junction guard ring for transient and ESD protection
Features
GSBAT54ST
GSBAT54CT
1
3
2
SOT-523
Marking: L1 Marking: L2
Marking: L3 Marking: L4
Schematic Diagram and Marking
Absolute Maximum Ratings (TA=25°C unless otherwise noted）
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V
Working Peak Reverse Voltage VRWM 30 V
DC Reverse Voltage VR30 V
Forward Continuous Voltage IF200 mA
Repetitive Peak Forward Voltage IFRM 300 mA
Non-repetitive Peak Forward Surge Current
@t<1.0s
IFSM 600 mA
Power Dissipation PD150 mW
Thermal Resistance Junction to Ambient RθJA 833 °C/W
Junction and Storage Temperature TJ,TSTG -65 to +150 °C
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Electrical Characteristics (TA=25°C unless otherwise noted）
Typical Electrical Characteristic Curves
Parameter Symbol Test Conditions Min Max Unit
Reverse Breakdown Voltage V(BR)R R
I=100μA 30 V
Leakage Current IR VR=25V 2.0 μA
Forward Voltage VF
IF=0.1mA
IF=1.0mA
IF=10mA
IF=30mA
240
320
400
500
mV
Typical Total Capacitance CT VR=1.0V,f=1MHz 10 pF
Reverse Recovery Time trr IF=IR=10mA,to IR=1.0mA RL=100Ω 5.0 ns
GSBAT54xT Series
Schottky Diode
SOT-523
SOT-523
Dim Min Max
A 1.5 1.7
B 0.75 0.85
C 0.6 0.8
D 0.15 0.3
G 0.9 1.1
H 0.02 0.1
J 0.1Typical
K 1.45 1.75
All Dimensions in mm
H
J
G
K
D
C
B
A
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www.goodarksemi.com Doc.USGSBAT54xTxGD1.0
Package Outline Dimensions
GSBAT54xT Series
Schottky Diode
