Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-And-Reel Packaging
Option Available[1]
Description
Agilent’s AT-32011 and AT-32033
are high performance NPN bipolar
transistors that have been
optimized for maximum ft at low
voltage operation, making them
ideal for use in battery powered
applications in wireless markets.
The AT-32033 uses the 3 lead SOT-
23, while the AT-32011 places the
same die in the higher
performance 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a
multiplicity of tasks. The
20 emitter finger interdigitated
geometry yields an easy to match
to and extremely fast transistor
with moderate power, low noise
resistance, and low operating
currents.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.2 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 2 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes these devices a
good fit for 900 MHz pager
applications. Voltage breakdowns
are high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz ft, 30
GHz f MAX Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
AT-32011
AT-32033
BASE EMITTER
EMITTER COLLECTOR
BASE EMITTER
COLLECTOR
320
320
SOT-23 (AT-32033)
SOT-143 (AT-32011)
Note:
1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices.”
Outline Drawing
2
Electrical Specifications, TA = 25°C
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Min. Typ. Max. Min. Typ. Max.
NF Noise Figure
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 1.0[1] 1.3[1] 1.0[2] 1.3[2]
GAAssociated Gain
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 12.5[1] 14[1] 11[2] 12.5[2]
hFE Forward Current Transfer Ratio
VCE = 2.7 V, IC = 2 mA – 70 300 70 300
ICBO Collector Cutoff Current
VCB = 3 V µA 0.2 0.2
IEBO Emitter Cutoff Current
VEB = 1 V µA 1.5 1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
AT-32011, AT-32033 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VEBO Emitter-Base Voltage V 1.5
VCBO Collector-Base Voltage V 11
VCEO Collector-Emitter Voltage V 5.5
ICCollector Current mA 32
PTPower Dissipation[2, 3] mW 200
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Thermal Resistance[2]:
θjc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 40°C.
1000 pF V
BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
W = 10 L = 1870
1000 pF
V
CC
W = 10
CKT A: L = 105
CKT B: L = 850
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
RF IN
W = 30
L = 60
CKT A: 25 Ω
CKT B: 5 Ω
RF OUT
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain, stability, and a practical
synthesizable match.
3
Characterization Information, TA = 25°C
AT-32011 AT-32033
Symbol Parameters and Test Conditions Units Typ. Typ.
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 13 13
G1dB Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16.5 15
IP3Output Third Order Intercept Point (opt tuning)
VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 24
|S21|E2Gain in 50 Ω System
VCE = 2.7 V, IC = 2 mA f = 0.9 GHz dB 13 11.5
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1 1.5
2
1
0.5
0.5 2.5
1.5
2
1 mA
2 mA
5 mA
10 mA
20 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
10
5
0.5 2.5
15
2.0
20
1 mA
2 mA
5 mA
10 mA
20 mA
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
20
5
0
0.5 2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
4
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
IP3 (dBm)
0
0
FREQUENCY (MHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
2 mA
5 mA
10 mA
20 mA
Figure 14. AT-32011 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 15. AT-32033 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 2 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded).
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at VCE = 2.7 V, with Optimal
Tuning.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
10
0
-2.5
0.5 2.5
2.5
2.0
7.5
2 mA
5 mA
5
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 1 V.
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 5 V.
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
P 1dB (dBm)
0
-5
FREQUENCY (GHz)
1.0 1.5
20
5
0
0.5 2.5
10
2.0
15
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
10
5
0.5 2.5
15
2.0
2 mA
5 mA
10 mA
20 mA
AT-32011, AT-32033 Typical Performance
5
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.59 172 -33.55 0.021 83 0.99 -5
0.5 0.88 -52 10.13 3.21 141 -20.85 0.091 59 0.92 -21
0.9 0.78 -86 8.67 2.71 117 -17.62 0.132 41 0.82 -32
1.0 0.75 -94 8.35 2.62 112 -17.27 0.137 37 0.79 -35
1.5 0.67 -127 6.35 2.08 89 -16.30 0.153 23 0.71 -45
1.8 0.63 -144 5.25 1.83 77 -16.28 0.154 16 0.67 -50
2.0 0.61 -155 4.75 1.73 70 -16.42 0.151 13 0.65 -53
2.4 0.59 -175 3.48 1.49 57 -16.86 0.144 9 0.62 -59
3.0 0.59 157 1.77 1.23 40 -17.89 0.128 8 0.61 -68
4.0 0.63 120 -0.39 0.96 18 -18.40 0.120 23 0.59 -84
5.0 0.69 94 -2.39 0.76 0 -15.60 0.166 35 0.59 -104
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.42 0.87 25 0.48
0.9 0.71 0.73 55 0.34
1.8 1.37 0.42 143 0.11
2.4 1.80 0.50 -162 0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω V CE = 1 V, IC = 1 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.97 -11 11.09 3.58 170 -32.75 0.023 83 0.99 -5
0.5 0.81 -52 9.88 3.12 134 -20.30 0.097 60 0.90 -22
0.9 0.61 -87 8.07 2.53 107 -17.57 0.132 46 0.78 -33
1.0 0.56 -95 7.65 2.41 101 -17.24 0.137 44 0.76 -35
1.5 0.41 -136 5.43 1.87 77 -16.61 0.148 39 0.68 -42
1.8 0.36 -160 4.30 1.64 66 -16.36 0.152 41 0.65 -46
2.0 0.34 -177 3.74 1.54 59 -16.05 0.158 44 0.63 -49
2.4 0.34 154 2.49 1.33 47 -15.10 0.176 49 0.61 -55
3.0 0.38 119 0.96 1.12 32 -12.77 0.230 55 0.59 -65
4.0 0.46 81 -0.84 0.91 15 -8.68 0.368 50 0.56 -87
5.0 0.51 56 -1.90 0.80 5 -5.68 0.520 37 0.51 -114
GAIN (dB)
0
-5
FREQUENCY (GHz)
23
25
15
5
4
15 MSG
MAG
S21 MSG
Figure 18. AT-32033 Gains vs.
Frequency at VCE = 1 V, IC= 1 mA.
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, IC = 1 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.42 0.79 26 0.44
0.9 0.71 0.70 54 0.35
1.8 1.37 0.53 119 0.18
2.4 1.80 0.55 158 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
-5
FREQUENCY (GHz)
23
25
15
5
4
15 MSG
MAG
S21
Figure 17. AT-32011 Gains vs.
Frequency at VCE = 1 V, IC= 1 mA.
6
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.67 6.81 170 -35.25 0.017 82 0.99 -6
0.5 0.80 -60 15.10 5.69 136 -23.07 0.070 57 0.86 -24
0.9 0.67 -97 12.97 4.45 112 -20.34 0.096 41 0.73 -35
1.0 0.64 -104 12.48 4.21 107 -20.05 0.099 39 0.70 -37
1.5 0.55 -137 10.04 3.18 86 -19.21 0.110 30 0.61 -45
1.8 0.51 -154 8.77 2.75 76 -19.04 0.112 28 0.58 -49
2.0 0.50 -165 8.13 2.55 70 -18.99 0.112 27 0.56 -52
2.4 0.48 176 6.75 2.18 58 -18.84 0.114 27 0.54 -57
3.0 0.49 150 4.97 1.77 43 -18.52 0.119 30 0.52 -64
4.0 0.54 116 2.73 1.37 22 -16.98 0.142 36 0.50 -77
5.0 0.61 92 0.83 1.10 4 -14.50 0.188 37 0.50 -95
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.57 0.69 22 0.30
0.9 0.78 0.60 51 0.25
1.8 1.25 0.42 117 0.14
2.4 1.57 0.44 159 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.93 -13 16.61 6.77 167 -34.89 0.018 82 0.99 -6
0.5 0.68 -56 14.29 5.18 127 -23.10 0.070 61 0.83 -22
0.9 0.44 -86 11.48 3.75 101 -20.35 0.096 55 0.71 -30
1.0 0.39 -93 10.88 3.50 96 -19.91 0.101 54 0.70 -31
1.5 0.23 -129 8.16 2.56 76 -17.99 0.126 55 0.64 -36
1.8 0.18 -156 6.89 2.21 66 -16.89 0.143 57 0.62 -39
2.0 0.16 -176 6.19 2.04 60 -16.14 0.156 57 0.61 -42
2.4 0.17 146 4.91 1.76 50 -14.70 0.184 58 0.60 -47
3.0 0.22 108 3.35 1.47 36 -12.51 0.237 57 0.58 -56
4.0 0.32 76 1.51 1.19 18 -9.19 0.347 51 0.55 -73
5.0 0.40 56 0.17 1.02 4 -6.54 0.471 40 0.51 -95
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.57 0.77 15 0.36
0.9 0.78 0.63 49 0.28
1.8 1.25 0.32 136 0.10
2.4 1.57 0.40 -159 0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 19. AT-32011 Gains vs.
Frequency at VCE = 2.7 V, IC= 2 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 20. AT-32033 Gains vs.
Frequency at VCE = 2.7 V, IC= 2 mA.
7
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2.7 V , IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.52 -49 31.08 35.79 149 -37.78 0.013 72 0.83 -22
0.5 0.36 -138 22.96 14.06 102 -28.93 0.036 62 0.40 -42
0.9 0.34 -168 18.33 8.25 86 -25.15 0.055 64 0.31 -42
1.0 0.34 -174 17.46 7.47 83 -24.41 0.060 64 0.30 -42
1.5 0.34 165 14.13 5.09 71 -21.35 0.086 63 0.28 -45
1.8 0.34 155 12.61 4.27 64 -19.92 0.101 61 0.28 -49
2.0 0.35 148 11.74 3.86 60 -19.08 0.111 60 0.27 -52
2.4 0.36 136 10.23 3.25 52 -17.60 0.132 57 0.27 -58
3.0 0.39 120 8.38 2.62 40 -15.86 0.161 51 0.26 -67
4.0 0.45 98 6.00 2.00 23 -13.68 0.207 42 0.24 -84
5.0 0.52 82 4.25 1.63 7 -11.93 0.253 32 0.23 -106
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 1.39 0.15 65 0.16
0.9 1.51 0.14 105 0.13
1.8 1.78 0.28 -164 0.12
2.4 1.96 0.40 -142 0.13
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MAG
S21 MSG
MSG
Figure 21. AT-32011 Gains vs.
Frequency at VCE = 2.7 V, IC= 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 2. 7 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.50 -35 29.84 31.03 137 -37.08 0.014 77 0.79 -18
0.5 0.16 -52 19.58 9.53 94 -25.35 0.054 77 0.53 -20
0.9 0.08 -36 14.81 5.50 81 -20.63 0.093 75 0.50 -24
1.0 0.07 -31 13.96 4.99 78 -19.66 0.104 74 0.50 -25
1.5 0.06 12 10.71 3.43 66 -16.31 0.153 69 0.49 -31
1.8 0.07 31 9.31 2.92 60 -14.75 0.183 66 0.48 -35
2.0 0.08 40 8.50 2.66 56 -13.85 0.203 63 0.47 -38
2.4 0.11 48 7.16 2.28 48 -12.32 0.242 59 0.46 -44
3.0 0.15 53 5.62 1.91 37 -10.49 0.299 52 0.43 -54
4.0 0.21 52 3.86 1.56 20 -8.11 0.393 41 0.39 -71
5.0 0.26 48 2.61 1.35 6 -6.34 0.482 29 0.33 -91
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 1.39 0.15 45 0.28
0.9 1.51 0.12 100 0.22
1.8 1.78 0.28 -135 0.14
2.4 1.96 0.46 -107 0.22
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
S21 MSG
MAG
MSG
Figure 22. AT-32033 Gains vs.
Frequency at VCE = 2.7 V, IC= 20 mA.
8
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.52 0.73 20 0.34
0.9 0.75 0.63 49 0.28
1.8 1.26 0.44 111 0.16
2.4 1.60 0.45 153 0.09
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -13 16.65 6.80 170 -35.84 0.016 82 0.99 -6
0.5 0.81 -57 15.18 5.74 137 -23.56 0.066 58 0.87 -23
0.9 0.68 -93 13.16 4.55 113 -20.72 0.092 43 0.74 -34
1.0 0.64 -100 12.69 4.31 109 -20.42 0.095 40 0.72 -36
1.5 0.55 -133 10.31 3.28 88 -19.49 0.106 32 0.63 -43
1.8 0.51 -150 9.05 2.84 78 -19.29 0.109 29 0.60 -47
2.0 0.49 -161 8.43 2.64 71 -19.22 0.109 28 0.58 -50
2.4 0.47 180 7.06 2.25 60 -19.03 0.112 29 0.55 -55
3.0 0.47 153 5.29 1.84 45 -18.72 0.116 31 0.54 -62
4.0 0.52 118 3.07 1.42 24 -17.19 0.138 37 0.52 -75
5.0 0.59 94 1.17 1.14 6 -14.73 0.183 38 0.51 -92
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 23. AT-32011 Gains vs.
Frequency at VCE = 5 V, IC= 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 5 V, IC = 2 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -13 16.56 6.73 167 -35.39 0.017 82 0.99 -5
0.5 0.69 -54 14.34 5.21 128 -23.74 0.065 62 0.85 -21
0.9 0.45 -82 11.62 3.81 102 -20.92 0.090 56 0.73 -28
1.0 0.40 -89 11.03 3.56 98 -20.35 0.096 55 0.72 -30
1.5 0.23 -121 8.33 2.61 77 -18.49 0.119 56 0.66 -35
1.8 0.17 -147 7.04 2.25 68 -17.39 0.135 58 0.65 -37
2.0 0.15 -167 6.36 2.08 62 -16.59 0.148 59 0.63 -40
2.4 0.14 151 5.06 1.79 51 -15.14 0.175 60 0.62 -44
3.0 0.20 109 3.52 1.50 37 -12.92 0.226 59 0.61 -53
4.0 0.31 76 1.66 1.21 19 -9.55 0.333 53 0.59 -70
5.0 0.38 55 0.26 1.03 5 -6.80 0.457 42 0.55 -90
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 2 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 0.52 0.79 15 0.42
0.9 0.75 0.65 48 0.30
1.8 1.26 0.33 127 0.11
2.4 1.60 0.39 -166 0.07
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 24. AT-32033 Gains vs.
Frequency at VCE = 5 V, IC= 2 mA.
9
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 5 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.58 -43 31.28 36.64 151 -38.13 0.012 72 0.83 -21
0.5 0.35 -128 23.51 14.99 103 -29.05 0.035 62 0.42 -40
0.9 0.31 -161 18.93 8.84 87 -25.30 0.054 64 0.33 -40
1.0 0.30 -167 18.06 8.00 84 -24.57 0.059 64 0.32 -40
1.5 0.29 170 14.74 5.46 72 -21.50 0.084 63 0.30 -44
1.8 0.30 158 13.22 4.58 65 -20.06 0.099 61 0.29 -47
2.0 0.30 151 12.35 4.15 61 -19.23 0.109 60 0.29 -50
2.4 0.32 138 10.85 3.49 53 -17.77 0.129 57 0.28 -56
3.0 0.35 121 8.99 2.82 42 -16.03 0.158 52 0.27 -64
4.0 0.41 98 6.64 2.15 25 -13.85 0.203 42 0.25 -80
5.0 0.48 83 4.90 1.76 9 -12.12 0.248 33 0.24 -100
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 1.38 0.18 50 0.20
0.9 1.50 0.15 88 0.16
1.8 1.78 0.23 176 0.13
2.4 1.96 0.34 -156 0.12
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MAG
S21
MSG
MSG
Figure 25. AT-32011 Gains vs.
Frequency at VCE = 5 V, IC= 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω VCE = 5 V, IC = 20 mA
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.55 -31 30.00 31.61 138 -37.72 0.013 78 0.81 -16
0.5 0.20 -44 19.91 9.90 95 -25.85 0.051 77 0.56 -19
0.9 0.13 -31 15.15 5.72 82 -21.01 0.089 75 0.53 -22
1.0 0.12 -28 14.30 5.19 79 -20.18 0.098 74 0.53 -23
1.5 0.10 -7 11.03 3.56 68 -16.77 0.145 69 0.52 -30
1.8 0.09 5 9.63 3.03 61 -15.19 0.174 66 0.51 -33
2.0 0.10 13 8.82 2.76 57 -14.33 0.192 64 0.50 -36
2.4 0.11 25 7.49 2.37 50 -12.77 0.230 60 0.49 -42
3.0 0.13 36 5.93 1.98 39 -10.90 0.285 54 0.47 -51
4.0 0.18 42 4.19 1.62 23 -8.50 0.376 43 0.42 -67
5.0 0.22 43 2.98 1.41 8 -6.65 0.465 31 0.37 -86
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, IC = 20 mA
Freq. Fmin Rn
GHz dB Mag Ang –
0.5[1] 1.38 0.25 35 0.30
0.9 1.50 0.19 85 0.23
1.8 1.78 0.21 -150 0.14
2.4 1.96 0.39 -114 0.19
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
Γopt
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
S21 MSG
MAG
Figure 26. AT-32033 Gains vs.
Frequency at VCE = 5 V, IC= 20 mA.
10
Ordering Information
Part Number Increment Comments
AT-32011-BLK 100 Bulk
AT-32011-TR1 3000 7" Reel
AT-32033-BLK 100 Bulk
AT-32033-TR1 3000 7" Reel
Package Dimensions
SOT-143 Plastic Package SOT-23 Plastic Package
1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.60 (0.024)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
0.10 (0.004)
0.013 (0.0005)
1.02 (0.040)
0.89 (0.035)
2.04 (0.080)
1.78 (0.070)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.152 (0.006)
0.066 (0.003)
0.69 (0.027)
0.45 (0.018)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
XXX
PACKAGE
MARKING
CODE
C
BE
SIDE VIEW END VIEW
TOP VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
0.10 (0.004)
0.013 (0.0005)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.92 (0.036)
0.78 (0.031)
E
E
B
C
XXX
PACKAGE
MARKING
CODE 1.40 (0.055)
1.20 (0.047) 2.65 (0.104)
2.10 (0.083)
0.54 (0.021)
0.37 (0.015)
0.60 (0.024)
0.45 (0.018)
2.04 (0.080)
1.78 (0.070)
TOP VIEW
0.15 (0.006)
0.09 (0.003)
0.69 (0.027)
0.45 (0.018)
END VIEW
SIDE VIEW
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-8920E (11/99)
