DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING * High power gain DESCRIPTION PIN * Low noise figure BFG590 * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS BFG590/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter * MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range * Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 2 Top view MARKING TYPE NUMBER MSB014 CODE BFG590 N38 BFG590/X N44 Fig.1 Simplified outline SOT143B. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 20 V VCEO collector-emitter voltage open base - - 15 V IC collector current (DC) - - 200 mA Ptot total power dissipation Ts 60 C - - 400 mW hFE DC current gain IC = 35 mA; VCE = 8 V 50 90 280 Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz - 0.7 - pF fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz - 5 - GHz GUM maximum unilateral power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C - 13 - dB |S21|2 insertion power gain IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C - 11 - dB 1998 Oct 02 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 15 V VEBO emitter-base voltage open collector - 3 V IC collector current (DC) - 200 mA Ptot total power dissipation Ts 60 C; see Fig.2; note 1 - 400 mW Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 60 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG249 600 handbook, halfpage Ptot (mW) 400 200 0 0 50 100 150 200 Ts ( o C) Fig.2 Power derating curve. 1998 Oct 02 3 VALUE UNIT 290 K/W Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage CONDITIONS IC = 0.1 mA; IE = 0 MIN. TYP. MAX. UNIT 20 - - V V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0 15 - - V V(BR)EBO emitter-base breakdown voltage IE = 0.1 mA; IC = 0 3 - - V ICBO collector-base leakage current VCB = 10 V; IE = 0 - - 100 nA hFE DC current gain IC = 70 mA; VCE = 8 V; see Fig.3 60 120 250 fT transition frequency IC = 80 mA; VCE = 4 V; f = 1 GHz; see Fig.5 - 5 - GHz Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz; see Fig.4 - 0.7 - pF GUM maximum unilateral power gain; note 1 IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C - 13 - dB IC = 80 mA; VCE = 4 V; f = 2 GHz; Tamb = 25 C - 7.5 - dB IC = 80 mA; VCE = 4 V; f = 900 MHz; Tamb = 25 C - 11 - dB |S21|2 insertion power gain Note S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 - S 11 2 ) ( 1 - S 22 2 ) 1998 Oct 02 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X MRA749 250 MLC057 1.2 handbook, halfpage handbook, halfpage hFE C re (pF) 200 0.8 150 100 0.4 50 0 10-2 10-1 1 10 IC (mA) 0 102 0 VCE = 8 V. Fig.3 2 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 MLC058 8 handbook, halfpage fT (GHz) 6 4 2 0 10 I C (mA) 102 VCE = 4 V; f = 1 GHz. Fig.5 1998 Oct 02 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X MLC059 30 MLC060 12 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 20 G max 8 G UM G max G UM 10 4 0 0 0 20 40 100 80 I C (mA) 60 0 f = 900 MHz; VCE = 4 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 MLC061 50 100 80 I C (mA) 60 Gain as a function of collector current; typical values. MLC062 50 handbook, halfpage gain gain (dB) G UM 40 40 f = 2 GHz; VCE = 4 V. handbook, halfpage (dB) 20 40 G UM MSG MSG 30 30 20 20 10 10 G max 0 G max 0 102 10 103 f (MHz) 104 IC = 20 mA; VCE = 4 V. Fig.8 1998 Oct 02 102 10 103 f (MHz) 104 IC = 80 mA; VCE = 4 V. Gain as a function of frequency; typical values. Fig.9 6 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 3 GHz 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 5 0.2 40 MHz 0.5 2 135 o 45 o 1 MGC882 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 . Fig.10 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 0o 10 135 o 45 o 90 o MGC805 IC = 80 mA; VCE = 4 V. Fig.11 Common emitter forward transmission coefficient (S21); typical values. 1998 Oct 02 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X 90 o handbook, full pagewidth 3 GHz 135 o 45 o 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MGC803 IC = 80 mA; VCE = 4 V. Fig.12 Common emitter reverse transmission coefficient (S12); typical values. 90 o 1.0 handbook, full pagewidth 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 3 GHz 0.2 40 MHz 0.5 2 135 o 5 45 o 1 MGC804 1.0 90 o IC = 80 mA; VCE = 4 V; Zo = 50 . Fig.13 Common emitter output reflection coefficient (S22); typical values. 1998 Oct 02 8 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1998 Oct 02 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 10 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X NOTES 1998 Oct 02 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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