1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
1.2 Features
nTypical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an IDq of 550 mA:
uAverage output power = 29.5 W
uGain=19dB
uEfficiency = 37.5 %
uACPR400k =−61.5 dBc
uACPR600k =−73 dBc
uEVMrms = 1.7 %
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (1800 MHz to 2000 MHz)
nInternally matched for ease of use
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
Rev. 02 — 9 February 2009 Product data sheet
Table 1. Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR400k ACPR600k EVMrms
(MHz) (V) (W) (dB) (%) (dBc) (dBc) (%)
CW 1930 to 1990 28 63 19 52 - - -
GSM EDGE 1930 to 1990 28 29.5 19 37.5 −61.5 −73 1.7
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 2 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
1.3 Applications
nRF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 1800 MHz to 2000 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G20-75 (SOT502A)
1 drain
2 gate
3 source [1]
BLF6G20LS-75 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G20-75 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLF6G20LS-75 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 18 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 3 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF6G20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 550 mA; PL= 75 W (CW); f = 1990 MHz.
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Unit
Rth(j-case) thermal resistance
from junction to case Tcase =80°C;
PL= 29.5 W (CW) BLF6G20-75 0.9 K/W
BLF6G20LS-75 0.75 K/W
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 100 mA 1.4 2 2.4 V
VGSq gate-source quiescent voltage VDS = 28 V; ID= 600 mA 1.6 2.1 2.6 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 3 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 14.9 18.5 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 300 nA
gfs forward transconductance VDS =10V; I
D=5A - 7 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 3.5 A - 0.15 0.235 Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f = 1 MHz - 1.6 - pF
Table 7. Application information
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 550 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 29.5 - W
Gppower gain PL(AV) = 29.5 W 17.5 19 - dB
RLin input return loss PL(AV) = 29.5 W - −10 −5.5 dB
ηDdrain efficiency PL(AV) = 29.5 W 33.5 37.5 - %
ACPR400k adjacent channel power ratio (400 kHz) PL(AV) = 29.5 W - −61.5 −59.5 dBc
ACPR600k adjacent channel power ratio (600 kHz) PL(AV) = 29.5 W - −73 −69.5 dBc
EVMrms RMS EDGE signal distortion error PL(AV) = 29.5 W - 1.7 3 %
EVMMpeak EDGE signal distortion error PL(AV) = 29.5 W - 4.8 10 %
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 4 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
7.2 One-tone CW
7.3 Two-tone CW
VDS = 28 V; IDq = 550 mA; f = 1990 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
PL (W)
0 1008040 6020
001aah674
21
Gp
(dB)
14
70ηD
(%)
0
Gp
ηD
10
20
30
40
50
60
15
16
17
18
19
20
VDS = 28 V; IDq = 550 mA; f1 = 1989.95 MHz; f2 = 1990.05 MHz.
Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load
power; typical values
PL(PEP) (W)
0 1008040 6020
001aah675
21
Gp
(dB)
14
70ηD
(%)
0
Gp
ηD
10
20
30
40
50
60
15
16
17
18
19
20
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 5 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
7.4 GSM-EDGE
VDS = 28 V; IDq = 550 mA; f1 = 1989.95 MHz;
f2= 1900.05 MHz. VDS = 28 V; f1 = 1989.95 MHz; f2= 1900.05 MHz.
(1) 450 MHz
(2) 500 MHz
(3) 550 MHz
(4) 600 MHz
(5) 650 MHz
Fig 3. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
Fig 4. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aah676
PL(PEP) (W)
0 18012060
−40
−60
−20
0
IMD
(dBc)
−80
IMD5
IMD3
IMD7
001aah677
PL(PEP) (W)
0 18012060
−40
−60
−20
0
IMD3
(dBc)
−80
(1)
(2)
(3)
(4)
(5)
VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase =25°C. VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase =25°C.
Fig 5. GSM-EDGE power gain and drain efficiency as
functions of average load power; typical
values
Fig 6. GSM-EDGE ACPR at 400 kHz and at 600 kHz as
functions of average load power; typical
values
PL(AV) (W)
0806020 40
001aah678
16
18
20
Gp
(dB)
14
20
40
60
ηD
(%)
0
Gp
ηD
PL(AV) (W)
0806020 40
001aah679
−70
−60
−50
ACPR
(dB)
−80
ACPR400k
ACPR600k
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 6 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
8. Test information
VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase =25°C. VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase =25°C.
Fig 7. GSM EDGE RMS EVM and peak EVM as
functions of average load power; typical
values
Fig 8. GSM EDGE ACPR at 400 kHz and RMS EVM as
functions of drain efficiency; typical values
PL(AV) (W)
0806020 40
001aah680
8
12
4
16
20
EVMM,
EVMrms
(%)
0
EVMM
EVMrms
ηD (%)
0806020 40
001aah681
−60
−64
−56
−52
ACPR400k
(dBc) EVMrms
(%)
−68
4
2
6
8
0
ACPR400k
EVMrms
See Table 8 for list of components.
Fig 9. Test circuit for operation at 1990 MHz
001aaf236
VGG
input
50 Ωoutput
50 Ω
VDD
C7
C4
R1
C5 C6
C13
C12
C3
C8 C9 C10
C11
C2C1
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 7 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr= 3.5 and thickness = 0.76 mm.
See Table 8 for list of components.
Fig 10. Component layout for 1990 MHz test circuit
001aah673
TESTCIRCUIT
TB
C7
C3
C2
C5C4 C8 C9
C11 C12
C10
C6
R1
C1
C13
VGG VDD
TB
TESTCIRCUIT
OUTPUTBOARD
INPUTBOARD
+
Table 8. List of components (see Figure 9 and Figure 10)
Component Description Value Remarks
C1 multilayer ceramic chip capacitor 1 pF [1]
C2, C11 gigahertz trimmer 0.6 pF to 4.5 pF Temex AT SM270 or equivalent
C3, C6, C9 multilayer ceramic chip capacitor 12 pF [1]
C4, C8, C10 multilayer ceramic chip capacitor 10 µF; 50 V TDK C5750X7R1H106M or equivalent
C5 multilayer ceramic chip capacitor 1.5 µF; 50 V TDK C3225X7R1H155M or equivalent
C7 tantalum capacitor 10 µF; 50 V Kemet T491 series or equivalent
C12 multilayer ceramic chip capacitor 12 pF [1]
C13 electrolytic capacitor 220 µF; 50 V
R1 Philips chip resistor 5.6 Ω; 1206
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 8 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
9. Package outline
Fig 11. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 9 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
Fig 12. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 10 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 9. Abbreviations
Acronym Description
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
EVM Error Vector Magnitude
GSM Global System for Mobile communications
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
RMS Root Mean Square
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G20-75_BLF6G20LS-75_2 20090209 Product data sheet - BLF6G20-75_1
BLF6G20LS-75_1
Modifications: •The document now describes both the eared and earless version of this product:
BLF6G20-75 and BLF6G20LS-75 respectively
•Table 7 on page 3: changed the minimum value for ηD
•Table 7 on page 3: changed the maximum value for EVMrms
•Table 7 on page 3: changed the maximum value for EVMM
BLF6G20-75_1 20080306 Preliminary data sheet - -
BLF6G20LS-75_1 20080218 Preliminary data sheet - -
BLF6G20-75_BLF6G20LS-75_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 9 February 2009 11 of 12
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G20-75; BLF6G20LS-75
Power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 February 2009
Document identifier: BLF6G20-75_BLF6G20LS-75_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 GSM-EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
