BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 -- 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp (MHz) (V) (W) CW 1930 to 1990 28 63 GSM EDGE 1930 to 1990 28 29.5 D ACPR400k ACPR600k EVMrms (dB) (%) (dBc) (dBc) (%) 19 52 - - - 19 37.5 -61.5 -73 1.7 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: u Average output power = 29.5 W u Gain = 19 dB u Efficiency = 37.5 % u ACPR400k = -61.5 dBc u ACPR600k = -73 dBc u EVMrms = 1.7 % n Easy power control n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (1800 MHz to 2000 MHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 1.3 Applications n RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G20-75 (SOT502A) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym112 BLF6G20LS-75 (SOT502B) 1 drain 2 gate 3 1 [1] source 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G20-75 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF6G20LS-75 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage -0.5 +13 V ID drain current - 18 A Tstg storage temperature -65 +150 C Tj junction temperature - 225 C BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 2 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase = 80 C; PL = 29.5 W (CW) BLF6G20-75 0.9 BLF6G20LS-75 0.75 K/W K/W 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 100 mA Min Typ Max Unit 65 - - V 1.4 2 2.4 V VGS(th) gate-source threshold voltage VGSq gate-source quiescent voltage VDS = 28 V; ID = 600 mA 1.6 2.1 2.6 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 3 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 14.9 18.5 - IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS = 10 V; ID = 5 A - 7 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 3.5 A - 0.15 0.235 Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 1.6 - A pF 7. Application information Table 7. Application information Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at VDS = 28 V; IDq = 550 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Min Typ Max Unit - - W Gp power gain PL(AV) = 29.5 W 17.5 19 - dB RLin input return loss PL(AV) = 29.5 W - -5.5 dB D drain efficiency - % 29.5 -10 PL(AV) = 29.5 W 33.5 37.5 ACPR400k adjacent channel power ratio (400 kHz) PL(AV) = 29.5 W - -61.5 -59.5 dBc ACPR600k adjacent channel power ratio (600 kHz) PL(AV) = 29.5 W - -73 -69.5 dBc EVMrms RMS EDGE signal distortion error PL(AV) = 29.5 W - 1.7 3 % EVMM peak EDGE signal distortion error PL(AV) = 29.5 W - 4.8 10 % 7.1 Ruggedness in class-AB operation The BLF6G20-75 and BLF6G20LS-75 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 550 mA; PL = 75 W (CW); f = 1990 MHz. BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 3 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 7.2 One-tone CW 001aah674 21 Gp (dB) 20 70 D (%) 60 Gp 19 50 18 40 D 17 30 16 20 15 10 14 0 20 40 60 80 0 100 PL (W) VDS = 28 V; IDq = 550 mA; f = 1990 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values 7.3 Two-tone CW 001aah675 21 Gp (dB) 20 Gp 19 70 D (%) 60 50 18 40 17 30 D 16 20 15 10 14 0 20 40 60 0 80 100 PL(PEP) (W) VDS = 28 V; IDq = 550 mA; f1 = 1989.95 MHz; f2 = 1990.05 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 4 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 001aah676 0 IMD (dBc) 001aah677 0 IMD3 (dBc) IMD3 -20 -20 IMD5 -40 -40 IMD7 -60 (1) (2) (3) (4) (5) -60 -80 -80 0 60 120 180 0 60 120 PL(PEP) (W) 180 PL(PEP) (W) VDS = 28 V; IDq = 550 mA; f1 = 1989.95 MHz; f2 = 1900.05 MHz. VDS = 28 V; f1 = 1989.95 MHz; f2 = 1900.05 MHz. (1) 450 MHz (2) 500 MHz (3) 550 MHz (4) 600 MHz (5) 650 MHz Fig 3. Two-tone CW intermodulation distortion as function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as a function of peak envelope load power; typical values 7.4 GSM-EDGE 001aah678 20 60 D (%) Gp Gp (dB) 18 001aah679 -50 ACPR (dB) 40 -60 20 -70 0 -80 ACPR400k D 16 14 0 20 40 60 80 PL(AV) (W) 0 VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase = 25 C. Fig 5. GSM-EDGE power gain and drain efficiency as functions of average load power; typical values ACPR600k 40 60 80 PL(AV) (W) VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase = 25 C. Fig 6. GSM-EDGE ACPR at 400 kHz and at 600 kHz as functions of average load power; typical values BLF6G20-75_BLF6G20LS-75_2 Product data sheet 20 (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 5 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 001aah680 20 EVMM, EVMrms (%) 16 001aah681 -52 EVMM ACPR400k (dBc) 8 EVMrms (%) -56 6 -60 4 12 EVMrms 8 ACPR400k -64 2 4 EVMrms -68 0 0 20 40 VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase = 25 C. Fig 7. 0 0 60 80 PL(AV) (W) GSM EDGE RMS EVM and peak EVM as functions of average load power; typical values 20 40 60 D (%) 80 VDS = 28 V; IDq = 550 mA; f = 1990 MHz; Tcase = 25 C. Fig 8. GSM EDGE ACPR at 400 kHz and RMS EVM as functions of drain efficiency; typical values 8. Test information VGG VDD C13 C7 R1 C4 input 50 C5 C6 C8 C9 C10 C12 C3 C1 output 50 C11 C2 001aaf236 See Table 8 for list of components. Fig 9. Test circuit for operation at 1990 MHz BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 6 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor C7 R1 VGG VDD C4 C5 C6 C2 C13 + C8 C9 C10 C12 C11 C3 C1 TESTCIRCUIT TESTCIRCUIT INPUTBOARD OUTPUTBOARD TB TB 001aah673 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. Fig 10. Component layout for 1990 MHz test circuit Table 8. List of components (see Figure 9 and Figure 10) Component Description Value C1 multilayer ceramic chip capacitor 1 pF C2, C11 gigahertz trimmer 0.6 pF to 4.5 pF Remarks [1] Temex AT SM270 or equivalent [1] C3, C6, C9 multilayer ceramic chip capacitor 12 pF C4, C8, C10 multilayer ceramic chip capacitor 10 F; 50 V TDK C5750X7R1H106M or equivalent C5 multilayer ceramic chip capacitor 1.5 F; 50 V TDK C3225X7R1H155M or equivalent C7 tantalum capacitor 10 F; 50 V C12 multilayer ceramic chip capacitor 12 pF C13 electrolytic capacitor 220 F; 50 V R1 Philips chip resistor 5.6 ; 1206 [1] Kemet T491 series or equivalent [1] American Technical Ceramics type 100B or capacitor of same quality. BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 7 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 8 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 9 of 12 BLF6G20-75; BLF6G20LS-75 NXP Semiconductors Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CDMA Code Division Multiple Access CW Continuous Wave EDGE Enhanced Data rates for GSM Evolution EVM Error Vector Magnitude GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency RMS Root Mean Square VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date BLF6G20-75_BLF6G20LS-75_2 20090209 Modifications: Data sheet status Change notice Supersedes Product data sheet - BLF6G20-75_1 BLF6G20LS-75_1 * The document now describes both the eared and earless version of this product: BLF6G20-75 and BLF6G20LS-75 respectively * * * Table 7 on page 3: changed the minimum value for D Table 7 on page 3: changed the maximum value for EVMrms Table 7 on page 3: changed the maximum value for EVMM BLF6G20-75_1 20080306 Preliminary data sheet - - BLF6G20LS-75_1 20080218 Preliminary data sheet - - BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 10 of 12 NXP Semiconductors BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G20-75_BLF6G20LS-75_2 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 02 -- 9 February 2009 11 of 12 NXP Semiconductors BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 GSM-EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 February 2009 Document identifier: BLF6G20-75_BLF6G20LS-75_2