Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
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FEATURES
•The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
•Maximum stable power gain: MSG = 14.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
•SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
•Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3031M05
NESG3031M05-A
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
• 8 mm w ide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
NESG3031M05-T1
NESG3031M05-T1-A
3
kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot Note
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PWB
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Data Sheet PU10414EJ04V0DS
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NESG3031M05
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE Note 1
VCE = 2 V, IC = 6 mA
220
300
380
RF Characteristics
Insertion Power Gain
S21e2
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
6.0
8.5
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
0.6
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
0.95
dB
Noise Figure (3)
NF
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
1.1
1.5
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
16.0
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
10.0
dB
Associated Gain (3)
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5
dB
Reverse Transfer Capacitance
Cre Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.15
0.25
pF
Maximum Stable Power Gain
MSGNote
3
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
11.0
14.0
dB
Gain 1 dB Compression Output
Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
13.0
dBm
Output 3rd Order Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
18.0
dBm
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
T1K
hFE Value
220 to 380
S21
S12
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Data Sheet PU10414EJ04V0DS
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NESG3031M05
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10414EJ04V0DS
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Remark The graphs indicate nominal characteristics.
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Data Sheet PU10414EJ04V0DS
5
NESG3031M05
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10414EJ04V0DS
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NESG3031M05
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10414EJ04V0DS
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NESG3031M05
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10414EJ04V0DS
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NESG3031M05
S-PARAMETERS
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Data Sheet PU10414EJ04V0DS 9
NESG3031M05
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
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