TPC6110
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6110
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −0.1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS −25/+20 V
DC (Note 1) ID −4.5
Drain current
Pulse (Note 1) IDP −18
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD 2.2 W
Drain power dissipation (t = 5 s)
(Note 2b)
PD 0.7 W
Single pulse avalanche energy (Note 3) EAS 3.4 mJ
Avalanche current IAR −2.3 A
Repetitive avalanche energy (Note 4) EAR 0.025 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a) Rth (ch-a) 56.8 °C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b) Rth (ch-a) 178.5 °C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
6 4
1 2 3
5
Start of commercial production
2009-08
TPC6110
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ± 20 V, VDS = 0 V ⎯ ⎯ ±100 nA
Drain cut-off current IDSS V
DS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA
V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = −10 mA, VGS = 10 V (Note 7)
−21 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = −10 V, ID = −0.1 mA −0.8 ⎯ −2.0 V
VGS = −4.5 V, ID = −2.2 A ⎯ 59 77
Drain-source ON resistance RDS (ON)
VGS = −10 V, ID = −2.2 A ⎯ 43 56
mΩ
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 4.2 8.4 ⎯ S
Input capacitance Ciss ⎯ 510 ⎯
Reverse transfer capacitance Crss ⎯ 85 ⎯
Output capacitance Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
⎯ 110 ⎯
pF
Rise time tr ⎯ 6 ⎯
Turn-on time ton ⎯ 12 ⎯
Fall time tf ⎯ 21 ⎯
Switching time
Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 70 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 14 ⎯
Gate-source charge 1 Qgs1 ⎯ 1.6 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ −24 V, VGS = −10 V,
ID = −4.5 A
⎯ 3.8 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Note 7: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current Pulse (Note 1) IDRP — — — −18 A
Forward voltage (diode) VDSF IDR = −4.5 A, VGS = 0 V — — 1.2 V
RL = 6.8 Ω
VDD ≈ −15 V
0 V
VGS−10 V
4.7 Ω
ID = −2.2 A
VOUT
TPC6110
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Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.3 A
Note 4: Repetitive rating : pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
Note 6: A dot marking for identifying the indication of product Labels.
Without a dot: [[Pb]]/INCLUDES > MCV
With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8
June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(a)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(b)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
Part No.
(or abbreviation code) S3K
Note 6
Lot code (month) Lot No.
Pin #1 Lot code
(year)
Product-specific code
TPC6110
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−0.1 −1 −10 −100
10
1000
100 VGS = −4.5 V
−10
1
−100
0.1
1
10
−10 −1 −0. 1
100
Ta = −55°C
25
100
−4−6 −8 −10
0
−0.4
−0.6
−0.8
−1
−0.2
0−2
ID = −4.5 A
−1.1
−2.2
−2 −4
0
−2
−6
−10
0 −1 −5−3
Ta = −55°C
100
25
−4
−8
−2−3 −4 −5
0
−4
−6
−8
−10
−2
0−1
VGS = −2.2 V
−4−3
−2.6
−2.4
−2.8
−
10
−
3.5
−4.5
0
−2
−3
−4
−5
−0.4 −0.6 −0.8 −1.00 −0.2
−1
VGS = −2.2 V
−4
−3
−2.6
−2.4
−2.8
−10 −3.5
−4.5
−8
−5
−6
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Common source
Ta = 25°C
Pulse Test Common source
Ta = 25°C
Pulse Test
Common source
VDS = −10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
Common source
VDS = −10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
Forward transfer admittance
⎪Yfs⎪ (S)
Drain-source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A)
Gate-source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
TPC6110
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−30
0
−20
−15
−5
0 8 12 4
−15
−10
−30
0
−25
16 20
−6
−12
VDD = −24 V
VGS
−6
−12
VDS = −24 V
−25
−10
−5
−20
2.0
0.5
1.0
1.5
0
0 8040 160120
(1) t = 5s
(2) t = 5s
2.5
10
−0.1 −100
100
−1 −10
10000
1000
Ciss
Coss
Cr
ss
01.2 1.6
−0.1
−1
−100
−10
−
10 −4.5
−3
−1VGS = 0 V
0.4 0.8
0
30
90
−40 −80 1600 40 120 80
120
ID = −1.1, −2.2, −4.5 A
VGS = −10 V
VGS = −4.5 V
ID = −1.1, −2.2, −4.5 A
60
Vth − Ta
RDS (ON) − Ta
IDR − VDS
PD − Ta
Common source
Pulse Test
Common source
Ta = 25°C
Pulse Test
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
VGS = −10 V
ID = −0.1 mA
Pulse Test
(1) Device mounted on a glass-epoxy board
(a) (Note 2a)
(2) Device mounted on a glass-epoxy board
(
b
)
(
Note 2b
)
Common source
ID = −4.5 A
Ta = 25°C
Pulse Test
Ambient temperature Ta (°C)
Gate threshold voltage
Vth (V)
Ambient temperature Ta (°C)
Total gate charge Qg (nC)
Capacitance C (pF)
Capacitance – VDS
Drain-source voltage VDS (V)
Drain-source ON-resistance
RDS (ON) ( μΩ)
Ambient temperature Ta (°C)
Drain reverse current IDR (A)
Drain-source voltage VDS (V)
Drain power dissipation
PD (W)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Dynamic input / output
characteristics
0
−80 040 80 120 160−40
−2.0
−0.4
−1.2
−0.8
−1.6
Common source
VDS = −10 V
ID = −0.1mA
Pulse test
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0.1
1m 10m 100m 1 10 100 1000
1
10
100
1000
rth − tw
−0.1 −1 −10
−1
−100
−0.1 −100
−10
SINGLE PULSE
Device mounted on a glass-epoxy
board (b) (Note 2b)
Device mounted on a glass-epoxy
board (a) (Note 2a)
※ Single pulse Ta=25℃
Curves must be derated linearly
with increase in temperature.
ID max (pulse) *
10 ms *
1 ms *
VDSS max
Transient thermal
impedance rth (°C/W)
Safe Operating Area
Drain-source voltage VDS (V)
Pulse width tw (s)
Drain current ID (A)
TPC6110
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
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except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
