Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
16.7 25
40 50
RθJL 2.5 3
Maximum Junction-to-Case CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
TA=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation A
TA=25°C PDSM
2.5
A
Repetitive avalanche energy L=0.1mH CmJ
Power Dissipation B
TC=25°C PDW
TC=100°C
Avalanche Current C
Continuous Drain
Current B,G
Maximum UnitsParameter
TA=25°C G
TA=100°C G
Absolute Maximum Ratings TA=25°C unless otherwise noted
ID
Gate-Source Voltage
Drain-Source Voltage -40
Pulsed Drain Current
-12
-12
-30
°C
V
V±20
25
A
-12
30
50
AOD413
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 45mΩ (VGS = -10V)
RDS(ON) < 69mΩ (VGS = -4.5V)
General Description
The AOD413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
A
OD413 is Pb-free (meets ROHS & Sony 259
specifications). AOD413L is a Green Product
ordering option. AOD413 and AOD413L are
electrically identical.
G D S
T
O-252
D-PAK
T
op View
Drain Connected to
T
ab G
D
S
Alpha & Omega Semiconductor, Ltd.
AOD413
Symbol Min Typ Max Units
BVDSS -40 V
-1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1 -1.9 -3 V
ID(ON) -30 A
36 45
TJ=125°C 56 70
51 69 m
Ω
gFS 16 S
VSD -0.75 -1 V
IS-12 A
Ciss 657 850 pF
Coss 143 185 pF
Crss 63 90 pF
Rg6.5 Ω
Qg(10V) 14.1 nC
Qg(4.5V) 7nC
Qgs 2.2 nC
Qgd 4.1 nC
tD(on) 8ns
tr12.2 ns
tD(off) 24 ns
tf12.5 ns
trr 23.2 ns
Qrr 18.2 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-20V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-20V, ID=-12A
Turn-On Rise Time
Turn-Off DelayTime VGS=-10V, VDS=-20V, RL=1.7Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
mΩ
VGS=-4.5V, ID=-8A
IS=-1A,VGS=0V
VDS=-5V, ID=-12A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-10mA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/µs
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed
j
unction temperature of 150°C. The value in an
y
g
iven application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Jan 2006
Alpha & Omega Semiconductor, Ltd.
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID=-10mA, VGS=0V
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3V
-6V
-3.5V
-4V
-10V -5V
0
5
10
15
20
25
1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
30
35
40
45
50
55
60
65
70
0 5 10 15 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.80
1.00
1.20
1.40
1.60
1.80
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=-10V
ID=-12A
VGS=-4.5V
ID=-8A
30
45
60
75
90
105
120
135
150
345678910
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
25°C
125°C
-4.5V
ID=-12A
Alpha & Omega Semiconductor, Ltd.
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID=-10mA, VGS=0V
0
2
4
6
8
10
03691215
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
250
500
750
1000
0 10203040
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps )
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ
(
Max
)
=175°C, T
=25°C
VDS=-15V
ID=-12A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=3°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TA=25°C
10µs
Alpha & Omega Semiconductor, Ltd.
AOD413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ID=-10mA, VGS=0V
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
6
8
10
12
14
0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
-ID(A), Peak Avalanche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipati on (W)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating -ID(A)
DD
D
A
VBV
IL
t−
⋅
=
TA=25°C
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
Alpha & Omega Semiconductor, Ltd.