AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD413 is Pb-free (meets ROHS & Sony 259 specifications). AOD413L is a Green Product ordering option. AOD413 and AOD413L are electrically identical. VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45m (VGS = -10V) RDS(ON) < 69m (VGS = -4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TA=25C G Pulsed Drain Current Avalanche Current C C TC=25C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A -12 IAR -12 A EAR 30 mJ -30 50 2.5 W 1.6 TJ, TSTG C -55 to 175 Symbol t 10s Steady-State Steady-State W 25 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C 20 ID IDM PD TC=100C TA=25C Power Dissipation A Units V -12 TA=100C G Repetitive avalanche energy L=0.1mH Maximum -40 RJA RJL Typ 16.7 40 2.5 Max 25 50 3 Units C/W C/W C/W AOD413 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-10mA, V GS=0V VDS=-32V, VGS=0V -40 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, ID=-8A VDS=-5V, ID=-12A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max -1.9 -1 -5 100 -3 V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A -1 -30 TJ=125C VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-12A VGS=-10V, VDS=-20V, RL=1.7, RGEN=3 IF=-12A, dI/dt=100A/s IF=-12A, dI/dt=100A/s Units 36 56 51 16 -0.75 657 143 63 6.5 A nA V A 45 70 69 m -1 -12 S V A 850 185 90 14.1 7 2.2 4.1 8 12.2 24 12.5 23.2 18.2 m pF pF pF nC nC nC nC ns ns ns ns ns nC A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: Jan 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 -5V -10V VDS=-5V -4.5V 25 -6V ID=-10mA, V GS=0V 20 -4V 15 -ID(A) -ID (A) 20 15 -3.5V 10 10 125C VGS=-3V 5 5 0 25C 0 0 1 2 3 4 5 1 1.5 2 2.5 3 70 4 4.5 5 1.80 VGS=-10V ID=-12A Normalized On-Resistance 65 60 RDS(ON) (m) 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 55 50 45 VGS=-10V 40 35 30 0 5 10 15 20 1.60 1.40 VGS=-4.5V ID=-8A 1.20 1.00 0.80 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 150 135 1.0E+00 ID=-12A 120 125C 105 -IS (A) RDS(ON) (m) 1.0E-01 90 125C 1.0E-02 75 1.0E-03 60 1.0E-04 45 25C 25C 1.0E-05 30 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-12A ID=-10mA, V GS=0V Ciss 750 Capacitance (pF) -VGS (Volts) 8 6 4 500 Coss Crss 250 2 0 0 0 3 6 9 12 0 15 10 100.0 10s RDS(ON) limited 40 T J(Max)=175C T A=25C 160 1ms Power (W) -ID (Amps) 30 200 T J(Max)=175C, T A=25C 10.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics -Qg (nC) Figure 7: Gate-Charge Characteristics 100s 10ms 1.0 DC 120 80 40 0.1 0.1 1 10 0 0.0001 100 -VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJA Normalized Transient Thermal Resistance 10 D=T on/T T J,PK =T A+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on Single Pulse 0.01 0.00001 0.0001 0.001 T 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 100 1000 AOD413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 L ID = tIDA=-10mA, V =0V BV - VGS DD 12 10 8 T A=25C 50 Power Dissipation (W) -ID(A), Peak Avalanche Current 14 40 30 20 10 0 6 0.00001 0.0001 0 0.001 25 14 60 12 50 10 100 125 150 175 T A=25C 40 Power (W) Current rating -ID(A) 75 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 8 6 30 20 4 10 2 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (C) Figure 14: Current De-rating (Note B) 10 ZJA Normalized Transient Thermal Resistance 50 1 D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=50C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse T on T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000