13PD75-TO
829 Flynn Road, Camarillo, CA 93012 • Phone: (805) 445-4500 • Fax: (805) 445-4502
Email: customerservice@telcomdevices.com • Website: www.telcomdevices.com
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The 13PD75-TO, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46
header, is intended for high speed and low noise applications. The diameter of the photosensitive region is
sufficiently small to enable operation at low dark current and low capacitance and yet large enough to allow
efficient coupling to multi-mode fiber. Planar semiconductor design and dielectric passivation provide very
low noise performance. Reliability is assured by hermetic sealing and 100% purge burn-in (200°C, 15
hours, Vr = 20V). Headers are available with either a lensed or flat window cap. Chips can also be attached
and wire bonded to customer-supplied or other specified packages.
High Speed InGaAs p-i-n Photodiode
Features:
• Planar Structure
• Dielectric Passivation
• 100% Purge Burn-in
• High Responsivity
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Volts
nA
pF
A/W
ns
GHz
–20
2
0.9
0.5
0.2
0.7
0.9
1.5
0.8
–5V
–5V
1300nm
(–3dB)
Parameters Test Conditions Minimum
DEVICE CHARACTERISTICS
Typical Maximum Units
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
30 Volts
10mA
5mA
–40°C to +85°C
–40°C to +85°C
250°C
ABSOLUTE MAXIMUM RATINGS