1SS3 01 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm Small Package : SC-70 2120.1 1.25+0.1 Low Forward Voltage : VF=0.9V(Typ.) ' _ Fast Reverse Recovery Time : trr=1l.6ns(Typ.) CH : +1 -| 3 s Small Total Capacitance : Cp=0.9pF(Typ.) s| | 2 = t +] # i a} my ie 3 aoa 2 EH t MAXIMUM RATINGS (Ta=25C) wo CHARACTERISTIC SYMBOL RATING UNIT = 3s 4 Maximum(Peak) Reverse Voltage VRM 85 Vv & 5 i = Reverse Voltage VR 80 Vv ~ f S Maximum(Peak) Forward Current TEM 300* mA b ; * 1 Average Forward Current To 100 mA ; L. ANODE Surge Current (10ms) IFSM 2% A LE 2. ANODE 20 3. CATHODE Power Dissipation P 100 mW JEDEC _ : , : Junction Temperature Tj 125 Cc FIAJ SC_70 Storage Temperature Tstg -55~+125 C TOSHIBA 1-2P1B * Unit Rating. Total Rating=Unit Rating x1.5 Weight : 0.006 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.] UNIT VF(1) If=lmA - 0.60 - Forward Voltage VF(2) LF=1LOmA - 0.72 - Vv VF(3) IF=LOOmA - 0.90 [1.20 I Vp=30V - - 0.1 Reverse Current RQ) R uA Irn(2) | Vp=80V - - 0.5 Total Capacitance CT Vp=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IfelOmA, Fig.1 - 1.6 4.0 ns Marking A B 3 8 11561$S$301 3 Ip Ve Ip YR 10 10 4 z Ta=100T ~~ a fe ex 75 B ew io? z, Zz 50 2 Ey fs a 5 5 107 a a 5 e ra > 10 5 fa BE ce 104 0.2 04 06 0.8 1.0 12 40 60 80 FORWARD VOLTAGE Vp cv) REVERSE VOLTAGE Vp (V) cr Vr > trr IF ~ 20 5 tae { = 1MHz ~ Ta = 25% ~ eH 1.6 o oy = 6 12 e a % ; e Q 08 & = o a a 5 od 3 0.4 hy a 5 = a Bo. 0.1 0.3 1 3 10 30 100 = 300 oc 0.1 0.3 1 3 10 30 50 REVERSE VOLTAGE Vp (V) FORWARD CURRENT Ip (mA) Fig. 1 REVERSE RECOVERY TIME (try) TEST CIRCUIT INPUT WAVEFORM OUTPUT WAVEFORM INPUT 0.014F DUT OUTPUT Ip=10mAy | | a x al OSCILOscoPE Fo. IR ~6V o o (Ryw=500) TR LJ E 50ns PULSE GENERATOR ( Rout = 500)