DATA SH EET
Product specification
Supersedes data of 2001 May 18 2004 Feb 11
DISCRETE SEMICONDUCTORS
BAP63-03
Silicon PIN diode
2004 Feb 11 2
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
FEATURES
High speed switching for RF signals
Low diode capacitance
Low diode fo rward resistance
Very low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
sym006
21
Marking code: D2.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Ra ting System (IEC 60134).
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAP63-03 plastic surface moun ted package; 2 lea ds SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage 50 V
IFcontinuous forward current 100 mA
Ptot total power dissipation Ts90 C500 mW
Tstg storage temper a t u re 65 +150 C
Tjjunction temperature 65 +150 C
2004 Feb 11 3
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
ELECTRICAL CHARACTERISTIC S
Tj=25C unless otherwise specified.
Note
1. Guaranteed on AQL bas is: inspection level S4, AQL 1.0.
THERMAL CHARACTE RISTI CS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF=50mA 0.95 1.1 V
IRreverse leakage current VR=35V 10 nA
Cddiode capacitance VR=0; f=1MHz 0.4 pF
VR=1V; f=1MHz 0.35 pF
VR= 20 V; f = 1 MHz 0.27 0.32 pF
rDdiode forw ard resistance IF= 0.5 mA; f = 100 MHz; note 1 2.5 3.5
IF= 1 mA; f = 100 MHz; note 1 1.95 3
IF= 10 mA; f = 100 MHz; note 1 1.17 1.8
IF= 100 mA; f = 100 MHz; note 1 0.9 1.5
s212isolation VR= 0; f = 900 MHz 15.4 dB
VR= 0; f = 1800 MHz 10.1 dB
VR= 0; f = 2 450 MHz 7.8 dB
s212insertion loss IF= 0.5 mA; f = 900 MHz 0.21 dB
IF= 0.5 mA; f = 1800 MHz 0.28 dB
IF= 0.5 mA; f = 2450 MHz 0.38 dB
s212insertion loss IF= 1 mA; f = 900 MHz 0.18 dB
IF= 1 mA; f = 1800 MHz 0.26 dB
IF= 1 mA; f = 2450 MHz 0.35 dB
s212insertion loss IF= 10 mA; f = 900 MHz 0.13 dB
IF= 10 m A; f = 1800 MHz 0.20 dB
IF= 10 m A; f = 2450 MHz 0.30 dB
s212insertion loss IF= 100 mA; f = 900 MHz 0.10 dB
IF= 100 mA; f = 1800 MHz 0.18 dB
IF= 100 mA; f = 2450 MHz 0.28 dB
Lcharge carrier life time when switched from IF=10mA to
IR=6mA; R
L=100;
measured at IR=3mA
310 ns
LSseries inductance 1.5 nH
SYMBOL PARAMETER VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point 120 K/W
2004 Feb 11 4
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
GRAPHICAL DATA
handbook, halfpage
10
1
101
MGW126
101110
IF (mA)
rD
(Ω)
102
Fig.2 Forward resistance as a function of forward
current; ty pical values.
Tj=25C; f = 100 MHz.
handbook, halfpage
020
500
400
0
100
MGW130
200
300
4 8 12 16 VR (V)
Cd
(fF)
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
Tj=25C; f = 1 MHz.
handbook, halfpage
0123
0
0.1
0.3
0.5
0.4
0.2
MGW131
f (GHz)
|s21|2
(dB) (1)
(2)
(3)
(4)
Fig.4 Insertion loss (s212) of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50 stripline circuit and biased via the
analyzer Tee network.
Tamb =25C.
(1) IF=100mA.
(2) IF=10mA. (3) IF=1mA.
(4) IF=0.5mA.
handbook, halfpage
0123
0
10
30
40
20
MGW132
f (GHz)
|
s21
|2
(dB)
Fig.5 Isolation (s212) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in serie s with a 50 stripline circuit.
Tamb =25C.
2004 Feb 11 5
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD323
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
2004 Feb 11 6
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document b efore initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
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shall have no liability for the consequences of use of such
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reserves the right to make changes to information
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not designed, authorized or warranted to be suitable for
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accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
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party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the ris ks
associated with their ap plications and produ cts .
2004 Feb 11 7
NXP Semiconductors Product specification
Silicon PIN diode BAP63-03
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in or de r to
avoid a default of the app lications and the products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subje ct to th e general
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical co ntent, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/04/pp8 Date of release: 2004 Feb 11