Advanced Power DUAL N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Lower Gate Charge BVDSS 100V
▼ Simple Drive Requirement RDS(ON) 150mΩ
▼ Fast Switching Characteristic ID2.5A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient362.5 ℃/W
Data and specifications subject to change without notice
AP5321GM-HF
Rating
Halogen-Free Product
2
10
2.5
Storage Temperature Range
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
2
-55 to 150
Operating Junction Temperature Range -55 to 150
Total Power Dissipation
1
Parameter
Thermal Data
201003171
100
+20
Parameter
Drain-Source Voltage
Gate-Source Voltage
S1 G1S2G2
D1 D1 D2 D2
SO-8
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=2A - - 150 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=2A - 2.8 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=2A - 10 16 nC
Qgs Gate-Source Charge VDS=80V - 2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 4 - nC
td(on) Turn-on Delay Time2VDS=50V - 6.5 - ns
trRise Time ID=2A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω-14-ns
tfFall Time VGS=10V - 3.5 - ns
Ciss Input Capacitance VGS=0V - 420 672 pF
Coss Output Capacitance VDS=25V - 60 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.5A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=2A, VGS=0V - 40 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 75 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP5321GM-HF
2
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
A
P5321GM-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
4
8
12
16
20
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
8.0V
7.0V
6.0V
VG=5.0V
0
2
4
6
8
10
12
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
8.0V
7.0V
6.0V
VG=5.0V
100
140
180
220
260
300
45678910
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=2A
TA=25
℃
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=2A
VG=10V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.4
0.6
0.8
1.0
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
AP5321GM-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS QGD
QG
Charge
0
2
4
6
8
10
024681012
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =80V
ID=2A
0
100
200
300
400
500
600
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
tT
0.02
Operation in this
area limited by
RDS(ON)
td(on) trtd(off) tf
VDS
VGS
10%
90%
