BFY450
Semi conductor Group 1 of 5 Draft B, September 99
HiRel NPN Silicon RF Transistor
• HiRel Di scret e and M icrowave Semiconductor
• For Medium Power Amplifiers
• Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
• Hermetically sealed microwave package
• Transit ion Fr equency fT = 20 GHz
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
• Space Qualif ied
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering Code Pin Configurat i on
1 2 3 4
Package
BFY450 (ql) - see below C E B E Micro-X
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1663
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1708
(see order inst r uctions for or der ing example)
12
34
BFY450
Semi conductor Group 2 of 5 Draft B, September 99
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 4.5 V
Collector-base voltage VCBO 15 V
Emitte r - base voltage VEBO 1.5 V
Collector curr ent IC100 mA
Base current IB10 mA
Total power dissipation,
TS ≤ 110°C 1), 2) Ptot 450 mW
Junction temperat ur e Tj175 °C
Operating temperature range Top -65...+175 °C
Storag e t em perature range Tstg -65...+175 °C
Thermal Resistance
Junction-soldering point 2) Rth JS < 145 K/W
Notes.:
1) At T S = + 110 °C. For T S > + 110 °C der at ing is requir ed.
2) TS is measured on the collector lead at the soldering point t o the pcb.
Electrical Charact eri st i cs
at TA=25°C; unless ot her wise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristi cs
Collector-base cut off cur rent
VCB = 5 V, IE = 0
ICBO - - 100 nA
Collector-emitter cutoff current 1.)
VCE = 4.5 V, IB = 1.0µA
ICEX - - 200
(t.b.d.)
µA
Emitter - base cuttof f current
VEB = 1.5 V, IC = 0
IEBO --50
µA
DC current gain
IC = 20 mA, VCE = 1 V
hFE 50 90 150 -
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
BFY450
Semi conductor Group 3 of 5 Draft B, September 99
Electrical Charact eri st i cs (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transit ion freq uency
IC = 90mA, VCE = 3 V, f = 1.0 GHz
IC = 90mA, VCE = 3 V, f = 2.0 GHz
fT
18
-
22
17
-
-
GHz
Collector-base capacit ance
VCB = 2 V, VBE = vbe = 0, f = 1 MHz
CCB - 0.42 0.9 pF
Collector-em it t er capacitance
VCE = 2 V, VBE = vbe = 0, f = 1 MHz
CCE - 1.27 2.6 pF
Emitter - base capacitance
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
CEB -2.03pF
Noise Figure
IC = 10 mA, VCE = 2 V, f = 1. 8 G Hz,
ZS = Zsopt
F - 1.25 2.0 dB
Insertion power g ain
IC = 50 mA, VCE = 2 V, f = 1. 8 G Hz
ZS = ZL = 50 Ω
|S21e|28.0 12 - dB
Power gain
IC = 50 mA, VCE = 2 V, f = 1. 8 G Hz
ZS = ZSopt , ZL = ZLopt
Gma 1.) - 16.0 - dB
1dB Compression point
IC = 50 mA, VCE = 2 V, f = 1. 8 G Hz
ZS = ZSopt , ZL = ZLopt
P-1dB -19-dBm
Notes.:
1) GS
Skk
ma =−−
21
12 1
2
()
,
GS
S
ms =21
12
BFY450
Semi conductor Group 4 of 5 Draft B, September 99
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the or der ing code specifies device family and quality level.
Ordering Form: Ordering Code: Q..........
BFY450 (ql)
(ql) : Quality Level
Ordering Example: Ordering Code: Q62702F1708
BFY450 ES
For BFY450 in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF- Sem iconductors (Small Signal Semiconductors )
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our m ar keting division :
Tel.: ++89 234 24480
Fax.: ++89 234 28438
e-mail: martin.wimmers@infineon.com
Address: Inf ineon T echnologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
BFY450
Semi conductor Group 5 of 5 Draft B, September 99
Mi cro-X Package
1
2
3
4
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
impl emented within c omponents or assem bl i es.
The informati on describes t he type of com ponent and s hall
not be cons i dered as assured c haracteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contac t the Of fi ces of S em ic onduct or Group in Germ any or
the Infineon Technologies Companies and
Representat i ves woldwide (see address list ).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Of fice, S emiconductor Group.
Infineon Technologies Semiconductors is a certi f i ed CECC
and QS9000 manufacturer (thi s includes ISO 9000).
