2N5951 N-Channel RF Amplifier * This device is designed primarily for electronic switching applications such as low on resistance analog switching. * Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25C unless otherwise noted Value Units VDG Symbol Drain-Gate Voltage Parameter 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25C unless otherwise noted Max. Units PD Symbol Total Device Dissipation Derate above 25C Parameter 350 2.8 mW mW/C RJC Thermal Resistance, Junction to Case 125 C/W RJA Thermal Resistance, Junction to Ambient 357 C/W (c) 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 www.fairchildsemi.com 1 2N5951 -- N-Channel RF Amplifier September 2007 Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0A, VDS = 0 Gate Reverse Current VGS = 15V, VDS = 0, T = 25C T = 100C VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 100nA VGS Gate-Source Forward Voltage VDS = 15V, ID = 700A IGSS -30 V -1.0 -200 nA -2 -5 V -1.3 -4.5 V On Characteristics *IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 RDS(on) Drain-Source On Resistance ID = 400A, f = 1.0kHz 7 13 mA 250 Small Signal Characteristics goss Common- Source Output Conductance VDS = 15V, VGS = 0V, f = 1.0kHz 75 / gos Output Conductance VDS = 15V, VGS = 0V, f = 100MHz 100 / VDS = 15V, VGS = 0V, f = 100MHz 250 / pF gis Input Conductance Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz 6 Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz 2 pF en Equivalent Short-Circuit Input Noise Voltage VDS = 15V, VGS = 0V, f = 1.0kHz 100 nV NF Noise Figure VDS = 15V, VGS = 0V, RG = 1.0m, f = 1.0kHz RG = 1.0k, f = 100MHz 2 5 dB * Pulse Test: Pulse Width 300s, Duty Cycle = 2% (c) 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 www.fairchildsemi.com 2 2N5951 -- N-Channel RF Amplifier Electrical Characteristics* Ta=25C unless otherwise noted The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM (R) PDP-SPMTM Power220(R) SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30 (c) 2007 Fairchild Semiconductor Corporation 2N5951 Rev. 1.0.0 www.fairchildsemi.com 3 2N5951 N-Channel RF Amplifier TRADEMARKS