Feb.1999
R
S
T
P
N
P1
B
GB
GU
EU GV
EV GW
EW
UVW
E
GU GV GW
EU EV EW GU
GU GV GW GB
8 15 15 17.2
10.16 10.16 10.16
2.54 2.54 2.54
2.54
2.54
2.54
2.54
GV
GW
E
EGGGGB
GEGEG E
NP1P
2 - φ4.5
13 12.5 12.5 12.5
105
±0.25
115
6.3
12
5
12.515 9
2
t = 0.6 t = 0.6
0.6
4
15
RST B UVW
2 - R5.5
60
58
29
±0.25
29
±0.25
45°
MOUNTING
HOLES
MAIN CIRCUIT
TERMINAL CONTROL CIRCUIT
TERMINAL
CIRCUIT DIAGRAM
LABEL
CM25MD-24H
APPLICATION
AC & DC motor controls, General pur pose inverters, Ser vo controls, NC, Robotics
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
¡IC..................................................................... 25A
¡VCES ......................................................... 1200V
¡Insulated Type
¡CIB Module
3φ Inverter+3φ Converter+Brake
¡UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
Feb.1999
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
BRAKE PART
CONVERTER PART
COMMON RATING
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Emitter Current
Maximum collector dissipation
1200
±20
25
50
25
50
104
G – E Short
C – E Short
TC = 25°C
PULSE (Note. 2)
TC = 25°C
PULSE (Note. 2)
Tf = 25°C
Symbol Parameter Condition UnitRating V
V
A
A
A
A
W
VCES
VGES
IC
ICM
IE
(Note. 1)
IEM
(Note. 1)
PC
(Note. 3)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
1600
440
25
250
260
3φ rectifying circuit
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
Symbol Parameter Condition UnitRating V
V
A
A
A2s
VRRM
Ea
IO
IFSM
I2t
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum Collector dissipation
Repetitive peak reverse voltage
Forward current
1200
±20
25
50
104
1200
25
G – E Short
C – E Short
TC = 25°C
PULSE (Note. 2)
Tf = 25°C
Clamp diode part
Clamp diode part
Symbol
VCES
VGES
IC
ICM
PC
(Note. 3)
VRRM
IFM
(Note. 3)
Parameter Condition UnitRating V
V
A
A
W
V
A
Tj
Tstg
Viso—
—
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
–40 ~ +150
–40 ~ +125
2500
0.98 ~1.47
100
AC 1 min.
Mounting M4 screw
Typical value
Symbol Parameter Condition UnitRating °C
°C
V
N . m
g
Feb.1999
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
BRAKE PART
CONVERTER PART
Note 1. IE, V EC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
• The conductive greese applied, between module and fin.
• Al plate is used as fin.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Tur n-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
3.4
—
5.0
3.8
1.0
—
100
200
150
350
3.5
250
—
1.2
1.9
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 600V, IC = 25A, VGE = 15V
VCC = 600V, IC = 25A
VGE1 = VGE2 = 15V
RG = 13Ω
Resistive load
IE = 25A, VGE = 0V
IE = 25A, VGE = 0V
die / dt = – 50A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
—
—
2.7
2.45
—
—
—
125
—
—
—
—
—
—
0.22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
V
EC (Note. 1)
trr
(Note. 1)
Qrr
(Note. 1)
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Limits
Min. Typ. Max. Unit
64.5 7.5IC = 2.5mA, VCE = 10V
IC = 25A, VGE = 15V (Note. 4)
VCE = 10V
VGE = 0V
Min. Typ. Max.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
V
V
1
0.5
3.4
—
5.0
3.8
1.0
—
1.5
1.2
1.7
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 600V, IC = 25A, VGE = 15V
IF = 25A, Clamp diode part
IGBT part
Clamp diode part
IC = 2.5mA, VCE = 10V
IC = 25A, VGE = 15V (Note. 4)
VCE = 10V
VGE = 0V
mA
µA
nF
nF
nF
nC
V
°C/W
°C/W
—
—
2.7
2.45
—
—
—
125
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
V
FM
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol Parameter Condition
VGE(th)
VCE(sat)
Limits Unit
6
4.5 7.5
Repetitive reverse current
Forward voltage drop
Thermal resistance
VR = VRRM, Tj = 150°C
IF = 25A
Per 1/6 module
mA
V
°C/W
—
—
—
—
—
—
IRRM
VFM
Rth(j-f) (Note. 5)
Symbol Parameter Condition Limits
Min. Typ. Max. Unit
8
1.5
1.7
Feb.1999
5
4
3
2
1
0500 10 20 30 40
Tj = 25°C
Tj = 125°C
VGE = 15V 10
8
6
4
2
0201020 4 6 8 12141618
9
7
5
3
1
Tj = 25°C
IC = 50A
IC = 25A
IC = 10A
50
40
20
30
10
0201020 4 6 8 12141618
VCE = 10V
Tj = 25°C
Tj = 125°C
100
35710023 5710123 2357102
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
Cies
VGE = 0V
Coes
Cres
50
40
20
30
10
010510 234 6789
VGE = 20
(V)
Tj = 25°C
15 12
11
10
8
9
7
100
102
7
5
3
2
1.0 1.5 2.0
101
7
5
3
2
2.5 3.0 3.5
Tj = 25°C
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
Feb.1999
20
16
12
8
4
02001500 50 100
18
14
10
6
2
VCC = 400V
VCC = 600V
IC = 25A
101
103
7
5
3
2
10023 57101102
102
7
5
3
2
23 57 10–1
101
7
5
3
2
100
7
5
3
2
–di/dt = 50A / µs
Tj = 25°C
trr
Irr
101
10–3
10–5 10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 57 23 57
Single Pulse
Tf = 25°C
Rth(j – f) = 1.2°C/W
101
10–3
10–5 10–4
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10–3
7
5
3
2
10–2
7
5
3
2
10–1
3
2
23 57 23 57
Single Pulse
Tf = 25°C
Rth(j – f) = 1.9°C/W
101
103
7
5
3
2
10023 57101
102
7
5
3
2
23 57
102
td(off)
VCC = 600V
VGE = ±15V
RG = 13Ω
Tj = 125°C
td(on)
tf
tr
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – f)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME trr (ns)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – f)
TIME (s) TIME (s)
VGE – GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
REVERSE RECOVERY CURRENT lrr (A)
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE