MITSUBISHI IGBT MODULES CM25MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM25MD-24H IC ..................................................................... 25A VCES ......................................................... 1200V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P 17.2 P1 N S T 10.16 10.16 10.16 EU EV EW GU GV GW GB GE GU GE G E GB G G G E U V 2 - 4.5 MOUNTING HOLES R B 13 12.5 12.5 15 5 GB GU GV GW E GW N U E 2 - R5.5 0.6 2 105 0.25 6.3 W 4 9 t = 0.6 115 12 V CIRCUIT DIAGRAM W 15 12.5 12.5 EW GV 60 P 15 GW EV 29 0.25 15 GV EU 29 0.25 2.54 2.54 2.54 8 GU B 58 2.54 2.54 2.54 2.54 R S T P1 t = 0.6 45 LABEL MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 MITSUBISHI IGBT MODULES CM25MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation Condition G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C (Note. 2) (Note. 2) Rating 1200 20 25 50 25 50 104 Unit Rating Unit 1200 20 25 50 104 1200 25 V V A A W V A Rating 1600 440 25 250 260 Unit Rating -40 ~ +150 -40 ~ +125 2500 0.98 ~1.47 100 Unit V V A A A A W BRAKE PART Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current Condition G - E Short C - E Short TC = 25C PULSE Tf = 25C Clamp diode part Clamp diode part (Note. 2) CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition 3 rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current V V A A A 2s COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition AC 1 min. Mounting M4 screw Typical value C C V N.m g Feb.1999 MITSUBISHI IGBT MODULES CM25MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART (Tj = 25C) VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 2.5mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 25A, VGE = 15V Tj = 150C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.7 2.45 -- -- -- 125 -- -- -- -- -- -- 0.22 -- -- 0.5 3.4 -- 5.0 3.8 1.0 -- 100 200 150 350 3.5 250 -- 1.2 1.9 A VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 2.5mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 25A, VGE = 15V Tj = 150C -- -- -- -- -- -- -- -- -- -- -- 2.7 2.45 -- -- -- 125 -- -- -- 0.5 3.4 -- 5.0 3.8 1.0 -- 1.5 1.2 1.7 A Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 1.7 Parameter Symbol Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) ICES Test conditions (Note. 4) VCE = 10V VGE = 0V VCC = 600V, IC = 25A, VGE = 15V VCC = 600V, IC = 25A VGE1 = VGE2 = 15V RG = 13 Resistive load IE = 25A, VGE = 0V IE = 25A, VGE = 0V die / dt = - 50A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Unit mA V nF nF nF nC ns ns ns ns V ns C C/W C/W BRAKE PART Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) Condition VCE = 10V VGE = 0V VCC = 600V, IC = 25A, VGE = 15V IF = 25A, Clamp diode part IGBT part Clamp diode part (Note. 4) Unit mA V nF nF nF nC V C/W C/W CONVERTER PART Symbol Parameter Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. Condition VR = VRRM, Tj = 150C IF = 25A Per 1/6 module Unit mA V C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM25MD-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20 (V) 50 15 VCE = 10V 12 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 50 TRANSFER CHARACTERISTICS (TYPICAL) 40 Tj = 25C 11 30 20 10 10 9 8 7 0 0 1 2 3 4 5 6 7 8 20 10 Tj = 25C Tj = 125C 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 VGE = 15V Tj = 25C Tj = 125C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 0 9 10 5 3 2 1 0 0 10 20 30 40 8 7 6 IC = 50A 5 IC = 25A 4 3 2 IC = 10A 1 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 Tj = 25C CAPACITANCE Cies, Coes, Cres (nF) 7 5 Tj = 25C 9 0 50 102 EMITTER CURRENT IE (A) 40 3 2 101 7 5 3 2 100 1.0 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 VGE = 0V 5 3 2 101 7 5 3 2 Cies Coes 100 7 5 3 2 10-1 Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM25MD-24H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf 3 td(off) 2 102 7 5 td(on) VCC = 600V VGE = 15V RG = 13 Tj = 125C 3 2 tr 101 0 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) REVERSE RECOVERY TIME trr (ns) 7 5 2 5 7 101 3 2 3 2 5 3 3 Irr 2 2 trr 102 100 7 5 7 5 3 3 2 2 2 3 5 7 101 10-1 2 3 5 7 102 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C Rth(j - f) = 1.2C/ W 100 5 101 0 10 5 7 102 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) SWITCHING TIMES (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 50A / s 7 7 Tj = 25C REVERSE RECOVERY CURRENT lrr (A) MEDIUM POWER SWITCHING USE INSULATED TYPE 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 100 Rth(j - f) = 1.9C/ W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) VGE - GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 25A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE QG (nC) Feb.1999