MRF8S26120HR3 MRF8S26120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
!Typical Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2620 MHz 15.5 31.5 6.3 --38.0
2655 MHz 15.5 31.1 6.3 --37.3
2690 MHz 15.6 31.1 6.2 --36.7
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
!Typical Pout @ 1 dB Compression Point ≃110 Watts CW
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!Designed for Digital Predistortion Error Correction Systems
!Optimized for Doherty Applications
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
CW Operation @ TC=25#C
Derate above 25#C
CW 141
0.78
W
W/#C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 72#C, 28 W CW, 28 Vdc, IDQ = 900 mA, 2690 MHz
Case Temperature 85#C, 110 W CW(4),28Vdc,I
DQ = 900 mA, 2690 MHz
R$JC
0.53
0.47
#C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Document Number: MRF8S26120H
Rev. 0, 6/2010
Freescale Semiconductor
Technical Data
2620--2690 MHz, 28 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S26120HR3
MRF8S26120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S26120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S26120HSR3
%Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 172 &Adc)
VGS(th) 1.2 2.0 2.7 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 900 mAdc, Measured in Functional Test)
VGS(Q) 1.5 2.6 3.0 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.7Adc)
VDS(on) 0.1 0.24 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 900 mA, Pout = 28 W Avg., f = 2690 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 14.5 15.6 17.5 dB
Drain Efficiency "D28.0 31.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.2 —dB
Adjacent Channel Power Ratio ACPR —--36.7 --34.5 dBc
Input Return Loss IRL — -- 1 4 -- 9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 900 mA, Pout =28WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2620 MHz 15.5 31.5 6.3 --38.0 -- 1 3
2655 MHz 15.5 31.1 6.3 --37.3 -- 1 4
2690 MHz 15.6 31.1 6.2 --36.7 -- 1 4
1. Part internally matched both on input and output.
(continued)
MRF8S26120HR3 MRF8S26120HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 900 mA, 2620--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —110 — W
IMD Symmetry @ 80 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—18 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —65 —MHz
Gain Flatness in 70 MHz Bandwidth @ Pout =28WAvg. GF—0.1 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.015 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C) (1)
(P1dB —0.007 —dB/#C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
Figure 1. MRF8S26120HR3(HSR3) Test Circuit Component Layout
MRF8S26120
Rev. 0
C4
C3C2
C1
C8
C7
C6
C5
C12
C11*
C10
C9
C16 C15*
C14*
C13*
R3
R2
R1
*C11, C13, C14, and C15 are mounted vertically.
CUT OUT AREA
Table 5. MRF8S26120HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 22 &F, 35 V Tantalum Capacitor T494X226K035AT Kemet
C2 330 nF, 100 V Chip Capacitor C3225X7R2A334KT TDK
C3 15 nF, 100 V Chip Capacitor C3225C0G2A153JT TDK
C4, C5, C8 2.2 &F, 100 V Chip Capacitors C3225X7R2A225KT TDK
C6, C9 22 &F, 50 V Chip Capacitors C5750JF1H226ZT TDK
C7, C10 470 &F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
C11, C12, C13, C14, C15 27 pF Chip Capacitors ATC800B270JT500XT ATC
C16 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
R1 1k), 1/4 W Chip Resistor CRCW12061K00FKEA Vishay
R2 10 k), 1/4 W Chip Resistor CRCW120610K0FKEA Vishay
R3 7.5 ), 1/4 W Chip Resistor CRCW12067R50FNEA Vishay
PCB 0.030*,+r=3.5 RF--35 Taconic
MRF8S26120HR3 MRF8S26120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2570
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
-- 1 7
-- 1 3
-- 1 4
-- 1 5
-- 1 6
15
16
15.9
15.8
-- 4 0
32
31.8
31.6
31.4
-- 3 5
-- 3 6
-- 3 7
-- 3 8
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
15.7
15.6
15.5
15.4
15.3
15.2
15.1
2590 2610 2630 2650 2670 2690 2710 2730
31.2
-- 3 9
-- 1 8
PARC
PARC (dB)
-- 1 . 4
-- 1
-- 1 . 1
-- 1 . 2
-- 1 . 3
-- 1 . 5
ACPR (dBc)
VDD =28Vdc,P
out =28W(Avg.),I
DQ = 900 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 80 W (PEP), IDQ = 900 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2655 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
20
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 30 40 60
0
60
50
40
30
20
10
"D,DRAIN EFFICIENCY (%)
-- 1 d B = 2 5 W
-- 2 d B = 3 5 W
-- 3 d B = 4 5 W
50
VDD =28Vdc,I
DQ = 900 mA, f = 2655 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
"D
ACPR
PARC
ACPR (dBc)
-- 5 5
-- 2 5
-- 3 0
-- 3 5
-- 4 5
-- 4 0
-- 5 0
16.5
Gps, POWER GAIN (dB)
16
15.5
15
14.5
14
13.5
Gps
6
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
11
17
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
15
10 100 200
10
-- 6 0
ACPR (dBc)
14
13
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 6. Broadband Frequency Response
0
24
2240
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 900 mA
16
12
8
2355
GAIN (dB)
20
Gain
2470 2585 2700 2815 2930 3045 3160
IRL
-- 1 8
0
-- 3
-- 6
-- 9
-- 1 2
IRL (dB)
4--15
"D
2690 MHz
2620 MHz 2655 MHz
2690 MHz
2620 MHz
2655 MHz
VDD =28Vdc,I
DQ = 900 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth Input Signal
PAR = 7.5 dB @ 0.01% Probability
on CCDF
2690 MHz 2620 MHz
2655 MHz
MRF8S26120HR3 MRF8S26120HSR3
7
RF Device Data
Freescale Semiconductor
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
8
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
VDD =28Vdc,I
DQ = 900 mA,Pout =28WAvg.
f
MHz
Zsource
)
Zload
)
2570 5.21 -- j5.62 3.17 -- j4.27
2590 5.26 -- j5.33 3.15 -- j4.20
2610 5.31 -- j5.02 3.12 -- j4.12
2630 5.35 -- j4.71 3.10 -- j4.04
2650 5.39 -- j4.39 3.07 -- j3.96
2670 5.46 -- j4.05 3.06 -- j3.88
2690 5.53 -- j3.77 3.06 -- j3.82
2710 5.57 -- j3.47 3.05 -- j3.77
2730 5.59 -- j3.15 3.05 -- j3.73
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8S26120HR3 MRF8S26120HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD =28
V
dc, IDQ = 861 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
53
51
49
37
54
52
46
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
50
55
57
3533 413231
56
48
47
30
Ideal
Actual
34 38 39 40
2690 MHz
2620 MHz
2655 MHz
2620 MHz
2690 MHz
2655 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
2620 149 51.7 182 52.6
2655 144 51.6 177 52.5
2690 146 51.6 179 52.5
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
2620 P1dB 5.83 -- j7.00 1.44 -- j2.87
2655 P1dB 7.87 -- j6.87 1.72 -- j3.15
2690 P1dB 9.46 -- j5.13 1.52 -- j3.20
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
10
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
PACKAGE DIMENSIONS
MRF8S26120HR3 MRF8S26120HSR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
MRF8S26120HR3 MRF8S26120HSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8S26120HR3 MRF8S26120HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0June 2010 !Initial Release of Data Sheet
MRF8S26120HR3 MRF8S26120HSR3
15
RF Device Data
Freescale Semiconductor
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Document Number: MRF8S26120H
Rev. 0, 6/2010
