Data Sheet, Doc. No. 5SYA 1689-02 11 05 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage VRRM DC forward current Tvj min max 25 C IF Peak forward current IFRM Limited by Tvjmax Tvj Junction temperature 1) Conditions Unit 1700 V 100 A 200 A 175 Tvj(op) -40 C 150 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 Diode characteristic values 2) Parameter Symbol Forward voltage VF Conditions IF = 100 A min typ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 2) Characteristic values according to IEC 60747 - 2 IR VR = 1700 V Irr Qrr trr Erec VCC = 900 V, IF = 100 A, di/dt = 1050 A/s L = 266 nH inductive load Switch: 5SMY 12K1721 Unit 1.8 Tvj = 125 C 1.95 V Tvj = 150 C 1.9 V Tvj = 25 C Continous reverse current max Tvj = 25 C V 0.1 mA Tvj = 125 C 0.57 mA Tvj = 150 C 1.8 mA Tvj = 25 C 90 A Tvj = 125 C 105 A Tvj = 150 C 110 A Tvj = 25 C 29 C Tvj = 125 C 45 C Tvj = 150 C 53 C Tvj = 25 C 540 ns Tvj = 125 C 720 ns Tvj = 150 C 780 ns Tvj = 25 C 16.8 mJ Tvj = 125 C 27.7 mJ Tvj = 150 C 32.4 mJ Mechanical properties Parameter Dimensions Symbol Conditions min Overall die LxW 8.56 x 8.56 mm exposed front metal LxW 6.6 x 6.6 mm 390 15 m thickness Metallization 3) 3) Unit front (E) AlSi1 back (C) Al / Ti / Ni / Ag 4 m 1.2 m For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. 5SLY 12G1700 | 5SYA 1689-02 11 05 Outline drawing Note: all dimensions are shown in millimeters This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 2 5SLY 12G1700| Doc. No. 5SYA 1689-02 11 05 200 175 VCC 1200 V di/dt 400 A/s Tvj(op) = 150 C L = 266 nH 200 125 C 25 C 175 150 150 125 IR [A] IF [A] 125 100 100 75 75 50 150 C 50 25 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 500 VF [V] Fig. 1 Typical diode forward characteristics, chip level Related documents: 5SYA 2045 Thermal runaway during blocking 5SYA 2059 Applying IGBT and Diode dies 5SYA 2093-00 Thermal design of IGBT Modules ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com www.abb.com/semiconductors 1000 1500 2000 VR [V] Fig. 2 Safe operation area (FBSOA) We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude