Symbols
KBU4A
KBU6A
KBU8A
RS601
KBU4B
KBU6B
KBU8B
RS602
KBU4D
KBU6D
KBU8D
RS603
KBU4G
KBU6G
KBU8G
RS604
KBU4J
KBU6J
KBU8J
RS605
KBU4K
KBU6K
KBU8K
RS606
KBU4M
KBU6M
KBU8M
RS607
Units
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS bridge input voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum average forward TC=100
rectified output current at TA=65 /40 /45 I(AV)
KBU4
4.0
4.0
KBU6
RS6
6.0
6.0
KBU8
8.0
6.0
/
Amps
Peak forward surge current, 8.3mS single half sine-wave
superimposed on rated load
(MIL-STD-750 method 4066)
IFSM 200.0 250.0 300.0 Amps
Maximum instantanous forward Voltage drop per
element at 3.0A/3.0A/8.0A VF1.0 1.0 1.0 Volt
Maximum DC reverse leakage at rated TA=25
DC blocking voltage per element TC=100 IR
10.0
100.0
10.0
200.0
10.0
300.0
uA
mA
Operating and storage temperature range TJ, TSTG -65 to +150
Features
KBU4,6,8/RS6 SERIES
SINGLE-PHASE SILICON BRIDGE
Reverse Voltage - 50 to 1000 Volts
Forward Current - 4.0/6.0/8.0 Amperes
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating: 200 amperes peak
Mounting Position: Any
Mounting Torgue: 5 ln. Ib. max.
Maximum Ratings and Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For capacitive load, derate current by 20%.
DIMENSIONS
DIM
inches m m
Note
Min. Max. Min. Max.
A - 0.760 - 19.3
B 1.0 - 25.4 -
C 0.895 0.935 22.7 23.7
D 0.260 0.280 6.6 7.1
E 0.165 0.185 4.2 4.7
F 0.140 0.160 3.6 4.1
G 0.065 0.085 1.7 2.2
H 0.660 0.700 16.8 17.8
H1 0.405 0.455 10.3 11.3
J 0.180 0.260 4.5 6.6
K 0.180 0.220 4.6 5.6
M 0.185 0.205 4.7 5.2
N 0.048 0.052 1.2 1.3
P 0.075 (1.9) R. Typ. (2 Places)
Q45
O
1
RATINGS AND CHARACTERISTIC CURVES
2
