Semiconductor Group 4–19
FEATURES
• 2 mm High SMT Package
• High Sensitivity (K1) at Low Operating
LED Current
• Couples AC and DC Signals
• Low Input-Output Capacitance
• Isolation Voltage, 2500 VRMS
• Low Distortion
• Available in Tape and Reel (suffix T)
APPLICATIONS
• Optical DAA for V.34 FAX/Modem
PCMCIA Cards
• Digital Telephone Line Isolation
DESCRIPTION
The IL350T/1T/8T/9T family of Linear Optocou-
pler consist of an IRLED optically coupled to
two photodiodes. The emitter mechanically
faces both diodes enabling them to receive
approximately an equal amount of infrared
light. The diodes produce a proportional
amount of photocurrents. The ratio of the pho-
tocurrents stays constant with high accuracy
when either the LED current changes or the
ambient temperature changes. Thus one can
control the output diode current optically by
controlling the input photodiode current.
The IL350T/1T/8T/9T optocouplers can be
used with the aid of operational amplifiers in
closed loop conditions to achieve highly linear
and electrically isolated AC and or DC signal
amplifiers.
NE
W
IL350T/351T/358T/359T
HIGH PERFORMANCE LINEAR OPTOCOUPLER
for Optical DAA in Telecommunications
Preliminary Data Sheet
Absolute Maximum Ratings
Emitter Sym Min. Max. Units
Reverse Voltage V
R3V
Forward Current I
F30 mA
Surge Current
Pulse Width <10 µsI
PK 150 mA
Power Dissipation, T
A=25°CP
LED 150 mW
Dearate Linearly from 25°C 2 mW/ °C
Junction Temperature T
J100 °C
Detector (each)
Reverse Voltage V
R15 V
Power Dissipation P 50 mW
Derate Linearly from 25°C 0.65 mW/°C
Junction Temperature T
J100 °C
Coupler
Isolation Test Voltage V
ISOL 2500 V
RMS
Total Package Power Dissipation Pt 250 mW
Derate Linearly from 25°C 2.8 mW/°C
Storage Temperature T
S– 40 150 °C
Operating Temperature T
OP 075°C
Lead Soldering Time at 260°C 10 sec.
Isolation Resistance
VIO=500 V, TA=25°C
VIO=500 V, TA=100°C1012 Ω
1011
Ω
Package Dimensions in Inches (mm)
.346 (8.79)
.326 (8.3)
.224 (5.7)
.216 (5.5)
.230 (5.84)
.224 (5.69)
.083 (2.1)
.075 (1.9)
.016
(.41)
Typ.
.050
(1.27)
Typ.
.040 (1.02)
.036 (.91)
.301 (7.65)
.281 (7.14)
40°
3°–7°
.017 (.43)
.013 (.33)
10°
Typ.
All 8 sides
.006
(.15)
Pin One ID
1
2
3
4 5
6
7
8K
A
N.C
N.C
K
A
K
A
.047 (1.19)
.037 (.94)
10.95
This document was created with FrameMaker 4.0.3
IL350T/351T/358T/359T
Semiconductor Group 4–20
Electrical Characteristics (TA=25°C)
Bin Table
LED Emitter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage V
F1.8 2.1 V I
F=10 mA
Reverse Current I
R.01 10 µAV
R=3 V
VF Temperature Coefficient ∆VF/∆°C –2.2 mV/°C
Junction Capacitance C
JTBD pF VF=0 V, f=1 MHz
Dynamic Resistance ∆VF/∆I
F6ΩI
F=2.5 mA
∆I
F=1 mA
Switching Time IL358T/9T t
F40 ns
t
R40 ns
Detector
Junction Capacitance C
J 12 pF V
F=0 V, f=1 MHz
NEP <4–14 W/√Hz VDET=0 V
AC Characteristics Photovoltaic Mode
Frequency Response IL358T/
9T BW(–3dB) 1.0 MHz I
P1=25 µA
Modulation current
∆IP1=±6 µA
Phase Response 45 Deg.
Rise Time 350 ns
Package
Input-Output Capacitance C
IO 1pFV
F=0 V, f=1 MHz
Common Mode Capacitance C
cm 0.5 pF V
F=0 V, f=1 MHz
Coupled Characteristics
K1 at IF=2 mA, VD=0 V K3 Bins
Min. Typ. Max.
IL350T 0.003 A–J
IL351T 0.005 D, E, F, G
IL358T 0.008 D, E, F, G
IL359T 0.008 E, F
Bin Min. Max.
A 0.557 0.626
B 0.620 0.696
C 0.690 0.773
D 0.765 0.859
E 0.851 0.955
F 0.945 1.061
G 1.051 1.181
H 1.169 1.311
I 1.297 1.456
J 1.442 1.618
