EW N IL350T/351T/358T/359T HIGH PERFORMANCE LINEAR OPTOCOUPLER for Optical DAA in Telecommunications Preliminary Data Sheet FEATURES Package Dimensions in Inches (mm) * 2 mm High SMT Package * High Sensitivity (K1) at Low Operating LED Current * Couples AC and DC Signals * Low Input-Output Capacitance * Isolation Voltage, 2500 VRMS * Low Distortion * Available in Tape and Reel (suffix T) K 1 8 K A 2 .224 (5.7) .346 (8.79) .326 (8.3) .216 (5.5) K 3 7 A 6 N.C Pin One ID A 4 .230 (5.84) .224 (5.69) APPLICATIONS N.C 5 .301 (7.65) .281 (7.14) * Optical DAA for V.34 FAX/Modem PCMCIA Cards * Digital Telephone Line Isolation .017 (.43) .013 (.33) .047 (1.19) .037 (.94) DESCRIPTION 40 3-7 .083 (2.1) .075 (1.9) The IL350T/1T/8T/9T family of Linear Optocou.040 (1.02) .036 to (.91) pler consist of an IRLED optically coupled .016 .006 .050 two photodiodes. The emitter mechanically (.41) (.15) (1.27) Typ. faces both diodes enabling them to receive Typ. approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the phoAbsolute Maximum Ratings tocurrents stays constant with high accuracy when either the LED current changes or Emitter the Sym Min. ambient temperature changes. Thus one can Reverse Voltage V R control the output diode current optically by Forward Current controlling the input photodiode current. F I The IL350T/1T/8T/9T optocouplers can beSurge Current Pulse s used with the aid of operational amplifiers inWidth <10 closed loop conditions to achieve highly linear Power Dissipation, T A =25C and electrically isolated AC and or DC Dearate signal Linearly from C 25 amplifiers. Junction Temperature 10 Typ. All 8 sides IPK P LED J T Max. Units 3 V 30 mA 150 mA 150 mW 2 mW/ C 100 C Detector (each) Reverse Voltage R Power Dissipation 15 V P Derate Linearly from C 25 Junction Temperature V 50 0.65 J C 100 T mW mW/C Coupler Isolation Test Voltage ISOL Total Package Power Dissipation V 2500 Derate Linearly from C 25 S T - 40 Operating Temperature OP T 0 Lead Soldering Time at C 260 Semiconductor Group 4-19 This document was created with FrameMaker 4.0.3 250 2.8 Storage Temperature Isolation Resistance C VIO=500 V, TA=25 VIO=500 V, TA=100 C V RMS Pt mW mW/C C 150 C 75 10 sec. 1012 1011 10.95 Electrical Characteristics (TA=25C) LED Emitter Symbol Forward Voltage F V R I Reverse Current VF/C VF Temperature Coefficient Junction Capacitance J C VF/IF Dynamic Resistance Switching Time IL358T/9T t F tR Min. Typ. Max. Units 1.8 2.1 V .01 10 A Test Conditions I F=10 mA V R =3 V mV/C -2.2 TBD pF 6 V F=0 V, f=1 MHz 40 ns 40 ns IF=2.5 mA IF=1 mA Detector Junction Capacitance J C NEP 12 pF <4-14 W/Hz 1.0 MHz VF=0 V, f=1 MHz VDET =0 V AC Characteristics Photovoltaic Mode Frequency Response IL358T/ BW(-3dB) 9T Phase Response 45 Deg. Rise Time 350 ns IP1=25 A Modulation current IP1= 6 A Package Input-Output Capacitance IO Common Mode Capacitance C cm C 1 pF 0.5 pF VF=0 V, f=1 MHz VF=0 V, f=1 MHz Coupled Characteristics K1 at IF=2 mA, VD=0 V Min. Typ. K3 Bins Max. IL350T 0.003 A-J IL351T 0.005 D, E, F, G IL358T 0.008 D, E, F, G IL359T 0.008 E, F Bin Table Bin Min. A B C D E F G H I J 0.557 0.620 0.690 0.765 0.851 0.945 1.051 1.169 1.297 1.442 Max. 0.626 0.696 0.773 0.859 0.955 1.061 1.181 1.311 1.456 1.618 IL350T/351T/358T/359T Semiconductor Group 4-20