1. Product profile
1.1 General description
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.
1.2 Features and benefits
Low noise
Interchangeability of drain and source connections
High gain.
1.3 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
1.4 Quick reference data
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 4 — 20 September 2011 Product data sheet
SOT23
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 25 V
VGSoff gate-source cut-off voltage
PMBFJ308 VDS =10V; I
D=1A1- 6.5 V
PMBFJ309 VDS =10V; I
D=1A1- 4V
PMBFJ310 VDS =10V; I
D=1A2- 6.5 V
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 2 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
2. Pinning information
[1] Drain and source are interchangeable.
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
IDSS drain current
PMBFJ308 VGS =0V; V
DS =10V 12 - 60 mA
PMBFJ309 VGS =0V; V
DS =10V 12 - 30 mA
PMBFJ310 VGS =0V; V
DS =10V 24 - 60 mA
Ptot total power dissipation up to Tamb =25C --250mW
yfsforward transfer admittance VDS =10V; I
D=10mA 10--mS
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning[1]
Pin Description Simplified outline Symbol
1source
2drain
3gate
12
3
sym060
2
13
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
PMBFJ308 - plastic surface mounted package; 3 leads SOT23
PMBFJ309
PMBFJ310
Table 4. Marking
Type number Marking code[1]
PMBFJ308 48*
PMBFJ309 49*
PMBFJ310 50*
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 3 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
5. Limiting values
6. Thermal characteristics
[1] Device mounted on an FR4 printed-circuit board.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 25 V
VGSO gate-source voltage open drain - 25 V
VGDO gate-drain voltage open source - 25 V
IGforward gate current (DC) - 50 mA
Ptot total power dissipation up to Tamb =25 C - 250 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
Fig 1. Power derating curve.
Tamb (°C)
0 20015050 100
mbb688
200
100
300
400
Ptot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 4 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
7. Static characteristics
8. Dynamic characteristics
Table 7. Static characteristics
Tj=25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)GSS gate-source breakdown voltage IG=1A; VDS =0V 25 - - V
VGSoff gate-source cut-off voltage V
PMBFJ308 ID=1A; VDS =10V 1- 6.5 V
PMBFJ309 ID=1A; VDS =10V 1- 4V
PMBFJ310 ID=1A; VDS =10V 2- 6.5 V
VGSS gate-source forward voltage IG=1mA; V
DS =0V - - 1 V
IDSS drain-source leakage current
PMBFJ308 VGS =0V; V
DS =10V 12 - 60 mA
PMBFJ309 VGS =0V; V
DS =10V 12 - 30 mA
PMBFJ310 VGS =0V; V
DS =10V 24 - 60 mA
IGSS gate-source leakage current VGS =15 V; VDS =0V - - 1nA
RDSon drain-source on-state resistance VGS =0V; V
DS =100mV - 50 -
yfsforward transfer admittance ID=10mA; V
DS =10V 10 - - mS
yoscommon source output admi ttance ID=10mA; V
DS =10V - - 250 S
Table 8. Dynamic characteristics
Tj = 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance VDS =10V
VGS =10 V; f = 1 MHz - 3 5 pF
VGS =0V; T
amb =25C-6-pF
Crss reverse transfer capacitance VDS =0V; V
GS =10 V; f = 1 MHz - 1.3 2.5 pF
gis input conductance VDS =10V; I
D=10mA
f = 100 MHz - 200 - S
f=450MHz -3 -mS
gfs transfer conductance VDS =10V; I
D=10mA
f=100MHz - 13 - mS
f=450MHz - 12 - mS
grs reverse conductance VDS =10V; I
D=10mA
f=100MHz - 30 - S
f=450MHz - 450 - S
gos output conductance VDS =10V; I
D=10mA
f = 100 MHz - 150 - S
f = 450 MHz - 400 - S
Vnequivalent input noise voltage VDS =10V; I
D=10mA; f=100Hz - 6 - nV/Hz
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 5 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
VDS =10V; T
j=25C. VDS =10V; I
D=10mA; T
j=25C.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values. Fig 3. Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
VDS =10V; I
D=10mA; T
j=25C. VDS = 100 mV; VGS =0 V; T
j=25C.
Fig 4. Co mmon-source output conductance as a
function of gate-source cut-off voltage; typical
values.
Fig 5. Drain-source on-state resistance as a function
of gate-source cut-off voltage; typical values.
VGSoff (V)
0−4−3−1−2
mcd220
20
30
10
40
50
IDSS
(mA)
0
0−2−4−8
mcd219
−6
20
0
16
12
8
yfs
(mS)
4
VGSoff (V)
0
150
100
50
0−1−2−4
mcd221
−3
gos
(μS)
VGSoff (V)
0−1−2−4
80
60
20
0
40
mcd222
−3
RDSon
(Ω)
VGSoff (V)
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 6 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
Tj=25C.
(1) VGS = 0 V.
(2) VGS = 0.25 V.
(3) VGS = 0.5 V.
(4) VGS = 0.75 V.
(5) VGS = 1 V.
VDS =10V; T
j=25C.
Fig 6. Typical output characteristics; PMBFJ308. Fig 7. Typical transfer characteristics; PMBFJ308.
Tj=25C.
(1) VGS = 0 V.
(2) VGS = 0.25 V.
(3) VGS = 0.5 V.
(4) VGS = 0.75 V.
(5) VGS = 1 V.
VDS =10V; T
j=25C.
Fig 8. Typical output characteristics; PMBFJ309. Fig 9. Typical transfer characteristics; PMBFJ309.
VDS (V)
0161248
mcd216
8
4
12
16
ID
(mA)
0
(3)
(1)
(2)
(5)
(4)
VGS (V)
−20−0.5−1.5 −1
mcd213
8
4
12
16
ID
(mA)
0
VDS (V)
0161248
mcd218
8
12
4
16
20
ID
(mA)
0
(1)
(3)
(5)
(4)
(2)
VGS (V)
−20−0.5−1.5 −1
mcd215
8
12
4
16
20
ID
(mA)
0
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 7 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
Tj=25C.
(1) VGS = 0 V.
(2) VGS = 0.5 V.
(3) VGS = 1 V.
(4) VGS = 1.5 V.
(5) VGS = 2 V.
(6) VGS = 2.5 V.
VDS =10V; T
j=25C.
Fig 10. Typical output characteristics; PMBFJ310. Fig 11. Typical transfer characteristics; PMBFJ310.
VDS =10V; T
j=25C. VDS =10V; T
j=25C.
Fig 12. Revers e tran sfer capacitance as a function of
gate-source voltage; typical values. Fig 13. Input capacitanc e as a fu ncti on of g ate- sourc e
voltage; typical values.
VDS (V)
0161248
mcd217
20
10
30
40
ID
(mA)
0
(2)
(4)
(1)
(5)
(6)
(3)
−4−3−20
40
30
10
0
20
mcd214
−1
I
D
(mA)
V
GS
(V)
−10 −40
4
3
1
0
2
mcd224
−8−6−2
C
rs
(pF)
V
GS
(V)
−10 0
10
0
mcd223
−8−6−4−2
8
6
4
2
Cis
(pF)
VGS (V)
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 8 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
VDS =10V; T
j=25C.
Fig 14. Drain cur ren t as a fu nction of gate-source voltage; typical values.
Tj=25C.
(1) ID = 10 mA.
(2) ID = 1 mA.
(3) ID = 100 A.
(4) IGSS.
Fig 15. Gate curren t as a fun ctio n o f drain-g ate vo ltage; typical values.
mcd229
1
10−2
10−1
102
10
103
ID
(μA)
10−3
VGS (V)
−2.5 0−0.5−1.5 −1.0−2.0
mcd230
−10
−1
−103
−102
−104
IGSS
(pA)
−10−1
VDG (V)
0 161248
(1)
(2)
(3)
(4)
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 9 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
Fig 16. Gate current as a function of junction temperature; typical values.
VDS =10V; I
D=10mA; T
amb =25C. VDS =10V; I
D=10mA; T
amb =25C.
Fig 17. Inp ut admittance; typical values. Fig 18. Forward transfer admittance; typical values.
mcd231
10
1
103
102
104
IGSS
(pA)
10−1
Tj (°C)
−25 17512525 75
mcd228
10
1
gis, bis
(mS)
10−1
102
f (MHz)
10 103
102
bis
gis
f (MHz)
10 103
102
mcd227
10
102
gfs,−bfs
(mS)
1
gfs
−bfs
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 10 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
VDS =10V; I
D=10mA; T
amb =25C. VDS =10V; I
D=10mA; T
amb =25C.
Fig 19. Revers e tran sfer admittance; typical values. Fig 20. Output ad mittance; typical values.
mcd226
f (MHz)
10 103
102
−10−1
−1
−10
−102
brs, grs
(mS)
−10−2
brs
grs
mcd225
10
1
bos, gos
(mS)
10−1
102
f (MHz)
10 103
102
bos
gos
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 11 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
9. Package outline
Fig 21. Package outline.
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 12 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
10. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PMBFJ308_309_310 v.4 20110920 Product data sheet - PMBFJ308_309_310 v.3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Package outline drawings have been updated to the latest version.
PMBFJ308_309_310 v.3
(9397 750 13403) 20040723 Product data sheet - PMBFJ308_309_310 v.2
PMBFJ308_309_310 v.2
(9397 750 01141) 19960911 Product specification - -
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 13 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
11.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PMBFJ308_309_310 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 14 of 15
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristi cs sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect tr ansistors
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 September 2011
Document identifier: PMBFJ308_309_310
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
