1
GaAs SP4T High Power Switch
DC - 3 GHz
Rev. V2
MASW-007813
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Features
Low Voltage Operation: 2.5 V
Low Harmonics: < -66 dBc at +34 dBm & 1 GHz
Low Insertion Loss: 0.7 dB at 1 GHz
High Isolation: 25 dB at 2 GHz
0.5 micron GaAs pHEMT Process
Low Profile, Lead-Free 3 mm PQFN Package
Halogen-Free ―Green‖ Mold Compound
RoHS* Compliant and 260°C Re-flow Compatible
Description
M/A-COM’s MASW-007813 is a GaAs pHEMT
MMIC single pole four throw (SP4T) high power
switch in a low cost, low profile, lead-free 3 mm
PQFN 16-lead package. The MASW-007813 is
ideally suited for applications where high power, low
control voltage, low insertion loss, high isolation,
small size and low cost are required.
Typical applications are for GSM and DCS handset
systems that connect separate transmit and receive
functions to a common antenna, as well as CDMA
handset and other related applications. The MASW
-007813 can be used in all systems operating up to
3 GHz requiring high power at low control voltage.
The MASW-007813 is fabricated using a 0.5 micron
gate length GaAs pHEMT process. The process
features full passivation for performance and
reliability.
Functional Schematic
Pin No. Pin Name Description
1 RF1 RF Port 1
2 GND RF Ground
3 GND RF Ground
4 RF2 RF Port 2
5 V2 Control 2
6 V1 Control 1
7 V4 Control 4
8 V3 Control 3
9 RF3 RF Port 3
10 GND RF Ground
11 GND RF Ground
12 RF4 RF Port 4
13 GND RF Ground
14 ANT Antenna Port
15 GND RF Ground
16 GND RF Ground
17 GND (paddle) 3 RF Ground
Pin Configuration
3. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
Ordering Information 1,2
Part Number Package
MASW-007813-TR3000 3000 piece reel
MASW-007813-001SMB Sample Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1. Reference Application Note M513 for reel size information.
2. All sample boards include 5 loose parts.