Document Number: 88582 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Ultrafast Rectifier
EGP10A thru EGP10G
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V to 400 V
IFSM 30 A
trr 50 ns
VF0.95 V, 1.25 V
TJ max. 150 °C
DO-204AL (DO-41)
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88582
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP10A thru EGP10G
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum instantaneous
forward voltage 1.0 A VF0.95 1.25 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C 100
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 50 ns
Typical junction
capacitance 4.0 V, 1 MHz CJ22 15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Typical thermal resistance RJA (1) 50 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP10D-E3/54 0.337 54 5500 13" diameter paper tape and reel
EGP10D-E3/73 0.337 73 3000 Ammo pack packaging
EGP10DHE3/54 (1) 0.337 54 5500 13" diameter paper tape and reel
EGP10DHE3/73 (1) 0.337 73 3000 Ammo pack packaging
0
1.0
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Lead Temperature (°C)
0.5
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
5
10
15
20
25
30
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Document Number: 88582 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGP10A thru EGP10G
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
100
Instantaneous Forward Current (A)
1.8
TJ = 150 °C
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
EGP10A thru EGP10D
EGP10F and EGP10G
020 6040 10080
0.01
0.1
10
1
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
20
10
30
40
50
60
70
0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
EGP10A thru EGP10D
EGP10F and EGP10G
Transient Thermal Impedance (°C/W)
0.01 0.1 1 10 100
100
10
1
0.1
t - Pulse Duration (s)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.107 (2.7)
0.080 (2.0)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
• Lead diameter isfor sufx “E” part numbers
0.026 (0.66)
0.023 (0.58)
Note
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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