2N4123 2N4124 NPN
2N4125 2N4126 PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4123 series
devices are complementary silicon small signal
transistors manufactured by the epitaxial planar
process designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N4123 2N4124 2N4125 2N4126 UNITS
Collector-Base Voltage VCBO 40 30 30 25 V
Collector-Emitter Voltage VCEO 30 25 30 25 V
Emitter-Base Voltage VEBO 5.0 5.0 4.0 4.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
Thermal Resistance JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N4123 2N4124 2N4125 2N4126
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX UNITS
ICBO V
CB=20V - 50 - 50 - 50 - 50 nA
IEBO V
EB=3.0V - 50 - 50 - 50 - 50 nA
BVCBO I
C=10μA 40 - 30 - 30 - 25 - V
BVCEO I
C=1.0mA 30 - 25 - 30 - 25 - V
BVEBO I
E=10μA 5.0 - 5.0 - 4.0 - 4.0 - V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.3 - 0.3 - 0.4 - 0.4 V
VBE(SAT) I
C=50mA, IB=5.0mA - 0.95 - 0.95 - 0.95 - 0.95 V
hFE V
CE=1.0V, IC=2.0mA 50 150 120 360 50 150 120 360
hFE V
CE=1.0V, IC=50mA 25 - 60 - 25 - 60 -
hfe V
CE=10V, IC=2.0mA, f=1.0kHz 50 200 120 480 50 200 120 480
fT V
CE=20V, IC=10mA, f=100MHz 250 - 300 - 200 - 250 - MHz
Cob V
CB=5.0V, IE=0, f=100kHz - 4.0 - 4.0 - 4.5 - 4.5 pF
Cib V
EB=0.5V, IC=0, f=100kHz - 8.0 - 8.0 - 10 - 10 pF
NF VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz - 6.0 - 5.0 - 5.0 - 4.0 dB
TO-92 CASE
R1 (12-January 2016)
www.centralsemi.com
2N4123 2N4124 NPN
2N4125 2N4126 PNP
COMPLEMENTARY
SILICON TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (12-January 2016)
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(001)
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