QFET (R) FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp starter and ballast. * * * * * * * 1.6A, 1000V, RDS(on) = 9 @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant FQD2N100/FQU2N100 January 2009 D D ! G S D-PAK FQD Series G D S G! I-PAK FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQD2N100/FQU2N100 1000 Units V 1.6 A 1.0 A 6.4 A - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed (Note 1) 30 V (Note 2) 160 mJ Avalanche Current (Note 1) 1.6 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 5.0 5.5 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/C C 300 C (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.5 Units C/W RJA RJA Thermal Resistance, Junction-to-Ambient * -- 50 C/W Thermal Resistance, Junction-to-Ambient -- 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) Rev. A2, January 2009 (c)2009 Fairchild Semiconductor Corporation http://store.iiic.cc/ Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 1000 -- -- V -- 0.976 -- V/C VDS = 1000 V, VGS = 0 V -- -- 10 A VDS = 800 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 7.1 9 -- 1.9 -- S -- 400 520 pF -- 40 52 pF -- 5 6.5 pF -- 13 35 ns -- 30 70 ns -- 25 60 ns -- 35 80 ns -- 12 15.5 nC Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.8 A gFS Forward Transconductance VDS = 50 V, ID = 0.8 A (Note 4) 8FQD2N100/FQU2N100 Electrical Characteristics Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 500 V, ID = 2.0 A, RG = 25 (Note 4, 5) VDS = 800 V, ID = 2.0 A, VGS = 10 V (Note 4, 5) -- 2.5 -- nC -- 6.5 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 ISM -- -- 6.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.6 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 520 -- ns Qrr Reverse Recovery Charge -- 2.3 -- C VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2009 Fairchild Semiconductor Corporation Rev. A2, January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 150 0 10 25 -55 Notes : 1. VDS = 50V 2. 250s Pulse Test Notes : 1. 250s Pulse Test 2. TC = 25 -1 -2 10 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 6 VGS , Gate-Source Voltage [V] 8 10 Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 20 15 VGS = 10V 0 10 10 VGS = 20V 5 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0 0 1 2 3 4 -1 10 ID , Drain Current [A] 0.2 1.2 1.4 VDS = 200V 10 Coss 300 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 100 VGS , Gate-Source Voltage [V] Capacitance [pF] 500 200 1.0 12 Ciss 400 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 0.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 700 0.4 VDS = 500V VDS = 1000V 8 6 4 2 Note : ID = 1.6 A 0 0 -1 10 0 10 1 10 0 2 4 6 8 10 12 14 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2009 Fairchild Semiconductor Corporation Figure 6. Gate Charge Characteristics Rev. A2, January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 1.5 ID, Drain Current [A] 100 s 10 s ID, Drain Current [A] 1 10 1 ms 0 10 10 ms DC -1 10 Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 0 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 .2 N o te s : 1 . Z J C ( t) = 2 .5 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] VDS, Drain-Source Voltage [V] t1 Z s i n g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation Rev. A2, January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp (c)2009 Fairchild Semiconductor Corporation Time Rev. A2, January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2009 Fairchild Semiconductor Corporation Rev. A2, January 2009 http://store.iiic.cc/ TO-252 (DPAK) (FS PKG Code 36) 1:1 FQD2N100/FQU2N100 Mechanical Dimensions Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 (c)2009 Fairchild Semiconductor Corporation Rev. A2, January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 Mechanical Dimensions I - PAK Dimensions in Millimeters (c)2009 Fairchild Semiconductor Corporation Rev. A2, January 2009 http://store.iiic.cc/ FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 (c)2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 http://store.iiic.cc/ FQD2N100/FQU2N100 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.