STD02N and STD02P
Description
The STD02N and STD02P are enhanced Darlington transistors
with built-in drivers and temperature compensation diode.
Manufactured using the unique Sanken thin-wafer production
technology, these devices achieve higher power levels through
decreased thermal resistance, and can withstand higher voltages
than similar devices on the market.
The temperature compensation diode is integrated on the same
chip as the power transistors. By this design, the STD02N and
STD02P eliminate delays that would otherwise be induced
between thermal sensing at the heat source, and the operation of
the compensation circuitry. Thus, these transistors are ideal for
applications where enhanced thermal stability is required.
This device is provided in a 5-pin TO-3P plastic package with
pin 4 removed. Contact Sanken™ for application support and
additional information on device performance.
Applications include:
▪ General amplifier applications
▪ Professional audio amplifiers
▪ Car audio amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes
▪ High power (130 W) handling in a small package
(TO-3P), for minimized heat sink requirements
▪ Built-in drivers and temperature compensation diodes,
reducing external component count and simplifying
circuit design
▪ NPN and PNP versions
▪ Emitter terminals placed symmetrically, pin 5 on NPN
and pin 1 on PNP models, allowing adjacent placement on
PCB to minimize trace length and output skew when used
in pairs
▪ Approved by major manufacturers
Darlington Transistors for Audio Amplifiers
Equivalent Circuits
Package: 5 pin TO-3P (MT-100)
Not to scale
Datasheet 28104.021
STD02N 3
5
1
2
STD02P
5
1
4
3
STD02N
12345
STD02P
12345
Emitter pins symmetrical
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
2
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25°C, unless oth er wise stated.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic Symbol Rating Unit
Collector-Base Voltage1VCBO 150 V
Collector-Emitter Voltage1VCEO 150 V
Emitter-Base Voltage1VEBO 5V
Collector Current1IC12 A
Base Current1IB1A
Collector Power Dissipation2PC130 W
Diode Forward Current IF10 mA
Junction Temperature TJ150 °C
Storage Temperature Tstg –55 to150 °C
1For PNP type (STD02P), voltage and current values are negative.
2TC = 25°C.
SELECTION GUIDE
Part Number Type hFE Rating Packing
STD02N* NPN Range O: 5000 to 12000
Bulk, 100 pieces
Range Y: 8000 to 20000
STD02P* PNP Range O: 5000 to 12000
Range Y: 8000 to 20000
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Collector-Cutoff Current1ICBO VCB = 150 V – – 100 μA
Emitter Cutoff Current1IEBO VEB = 5 V – – 100 μA
Collector-Emitter Voltage1VCEO IC = 30 mA 150 – – V
DC Current Transfer Ratio2,3 hFE VCE = 4 V, IC = 7 A 5000 – 20000 –
Collector-Emitter Saturation Voltage1VCE(sat) IC = 7 A, IB = 7 mA – – –2.0 V
Base-Emitter Saturation Voltage1VBE(sat) IC = 7 A, IB = 7 mA – – –2.5 V
Base-Emitter Voltage VBE
STD02N VCE = 20 V, IC = 40 mA – 1200 – mV
STD02P VCE = –20 V, IC = –40 mA – 1210 – mV
Diode Forward Voltage VF
STD02N IF = 2.5 mA – 705 – mV
STD02P IF = 2.5 mA – 1540 – mV
1For PNP type (STD02P), voltage and current values are negative.
2hFE rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y).
3When the transistor is used in pairs, the following conditions must be satisfi ed: Total VF ≤ Total VBE of the transistors (the above measurement
conditions shall be applied), and ∆V = 0 to 500 mV.
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
3
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
12
10
8
6
4
2
0
12
10
8
6
4
2
0
130
100
50
0
02 4 6
V
CE
(V)
I
C
(A)
0
1
2
3
0.0001 0.001 0.01 0.1 1
V
CE(sat)
(V)
7 A
10 A
I
C
=5 A
0 0.5 1.0 1.5 2.0 2.5
0.1 1 10 100
1
10
0 0.5 1.0 1.5 2.0
1 10 100 1000
0.01
0.10
1.00
10.00
110100
1000
P
C
vs. T
A
0 25 50 75 100 125 150
T
A
(°C)
P
C
(W)
Without Heatsink
With InfiniteHeatsink
3.5
I
C
vs. V
CE
V
CE(sat)
vs. I
B
h
FE
vs. I
C
I
C
vs. V
BE
R
θJA
vs. t
I
F
vs. V
F
For Diode
Safe Operating
Area
R
θJA
(°C/W)
10 mA
2.0mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
125°C
25°C
–30°C
125°C
10 ms
DC
100 ms
25°C
–30°C
I
B
= 0.2 mA
I
C
(A)
V
CE
= 4 V Continuous V
CE
= 4 V Continuous
Single pulse
No heatsink
Natural cooling
T
A
=25°
V
BE
(V)
I
F
(mA)
VF(V)
t(ms)
I
B
(A)
IC(A)
hFE
102
103
104
105
106
0.01
0.1
1.0
10.0
100.0
V
CE
(V)
IC(A)
STD02N Performance Characteristics at TA = 25°C
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
4
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
12
10
8
6
4
2
0
12
10
8
6
4
2
0
130
100
50
0
02 4 6
0
1
2
3
0.0001 0.001 0.01 0.1 1
7 A
10 A
–I
C
=5 A
0 0.5 1.0 1.5 2.0 2.5
0.1 1 10 100
1
10
0 0.5 1.0 1.5 2.0
1 10 100 1000
0.01
0.10
1.00
10.00
110100
1000
P
C
vs. T
A
0 25 50 75 100 125 150
T
A
(°C)
P
C
(W)
Without Heatsink
With Infinite Heatsink
3.5
I
C
vs. V
CE
V
CE(sat)
vs. I
B
h
FE
vs. I
C
I
C
vs. V
BE
R
θJA
vs. t
I
F
vs. V
F
For Diode
Safe Operating
Area
R
θJA
(°C/W)
10 mA
2.0mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
125°C
25°C
–30°C
125°C
10 ms
DC
100 ms
25°C
–30°C
–I
B
= 0.2 mA
Single pulse
No heatsink
Natural cooling
T
A
=25°
t(ms)
hFE
102
103
104
105
106
0.01
0.1
1.0
10.0
100.0
–V
CE
(V)
–I
C
(A)
–V
CE(sat)
(V)
–I
C
(A)
–V
CE
= 4 V Continuous –V
CE
= 4 V Continuous
I
F
(mA)
VF(V)
–I
B
(A)
–IC(A)
hFE
–V
CE
(V)
–V
BE
(V)
IC(A)
STD02P Performance Characteristics at TA = 25°C
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
5
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
STD02N
Terminal
Configuration
STD02P
Terminal
Configuration
15.6 ±0.3
15.8 ±0.2
4.8 ±0.2
1.7 ±0.1
Terminal dimensions at case surface
Terminal dimension
at case surface
Terminal dimension at lead tips
1.74+0.2
–0.1 1.34+0.2
–0.1
1.05+0.2
–0.1
0.65+0.2
–0.1
20.5+1
–0.5
2+0.2
–0.1
3.2 +0.1
–0.2
19.9 ±0.3
14.9 ±0.2 2 ±0.2
3 MAX
(35.4)
Gate Burr
Branding
XXXXXXXX
XXXXXXXX
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Terminal treatment: Ni plating and solder dip
Heat sink material: Cu
Heat sink treatment: Ni plating
Leadform: 2804
Weight (approximate): 6.0 g
Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion):
1st line, type: STD02X
Where: X is the transistor type (N or P)
2nd line, lot: YMDD H
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
DD is the 2-digit date
H is the hFE rating (O or Y; for values see
footnote, Electrical Characteristics table)
12345
4×P2.54 ±0.6 = 10.16 ±0.8
4×P2.54 ±0.1 = (10.16)
12345
PACKAGE OUTLINE DRAWING, TO-3P
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
6
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
WARNING — These devices are designed to be operated at lethal voltages and energy levels. Circuit designs
that embody these components must conform with applicable safety requirements. Pre cau tions must be
taken to prevent accidental contact with power-line potentials. Do not connect ground ed test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage environments and handling methods, please
observe the following cautions.
Cautions for Storage
• Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative
humidity (around 40 to 75%); avoid storage locations that experience extreme changes in temperature or
humidity.
• Avoid locations where dust or harmful gases are present and avoid direct sunlight.
• Reinspect for rust in leads and solderability of products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from
power surges from the testing device, shorts between adjacent products, and shorts to the heatsink.
Remarks About Using Silicone Grease with a Heatsink
• When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more
silicone grease than required is applied, it may produce stress.
• Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation
effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the
product to a heatsink.
• Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the
product life, are indicated below:
Type Suppliers
G746 Shin-Etsu Chemical Co., Ltd.
YG6260 Toshiba Silicone Co., Ltd.
SC102 Dow Corning Toray Silicone Co., Ltd.
Heatsink Mounting Method
• Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation
effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion
can arise in the product frame. To avoid these problems, observe the recommended tightening torques for this product
package type, TO-3P (MT-100): 0.686 to 0.882 N•m (7 to 9 kgf•cm).
• Diameter of Heatsink Hole: < 4 mm. The defl ection of the press mold when making the hole may cause the case material
to crack at the joint with the heatsink. Please pay special attention for this effect.
Soldering
• When soldering the products, please be sure to minimize the working time, within the following limits:
260±5°C 10 s
350±5°C 3 s
• Soldering iron should be at a distance of at least 1.5 mm from the body of the products
Electrostatic Discharge
• When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 MΩ
of resistance to ground to prevent shock hazard.
• Workbenches where the products are handled should be grounded and be provided with conductive table and
floor mats.
• When using measuring equipment such as a curve tracer, the equipment should be grounded.
• When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent
leak voltages generated by them from being applied to the products.
• The products should always be stored and transported in our shipping containers or conductive containers, or be
wrapped in aluminum foil.
Darlington Transistors for Audio Amplifiers
STD02N and
STD02P
7
Sanken Electric Co., Ltd.
3-6-3 Kitano, Niiza-shi, Saitama-ken
352-8666, Japan
Phone:+81-48-472-1111
http://www.sanken-ele.co.jp
The products described herein are manufactured in Ja pan by Sanken Electric Co., Ltd.
Sanken reserves the right to make, from time to time, such de par tures from the detail spec i fi ca tions as may be re quired to per mit im prove ments in
the per for mance, reliability, or manufacturability of its prod ucts. Therefore, the user is cau tioned to verify that the in for ma tion in this publication is
current before placing any order.
When using the products described herein, the ap pli ca bil i ty and suit abil i ty of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its prod ucts, the occurrence of failure and defect of semi con duc tor products
at a certain rate is in ev i ta ble.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip ment or apparatus
(home ap pli anc es, office equipment, tele com mu ni ca tion equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aero space equipment) is not supported.
When considering the use of Sanken products in ap pli ca tions where higher reliability is re quired (transportation equipment and its control systems
or equip ment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written
confirmation of your spec i fi ca tions.
The use of Sanken products without the written consent of Sanken in applications where ex treme ly high reliability is required (aerospace equip-
ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information in clud ed herein is believed to be accurate and reliable. Ap pli ca tion and operation examples described in this pub li ca tion are
given for reference only and Sanken assumes no re spon si bil i ty for any in fringe ment of in dus tri al property rights, intellectual property rights, or any
other rights of Sanken or any third party that may result from its use.
Copyright © 2007 Sanken Electric Co., Ltd.
Darlington Transistors for Audio Amplifiers
STD02N and STD02P August, 2007
Sanken Electric Co., Ltd.
T02-014EA-070820
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Te l: 852-2735-5262
Fax: 852-2735-5494
Sanken Elect ric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kot hrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Te l: 81-3-3986-6164
Fax: 81-3-39 8 6- 8 637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Te l: 82-2-714-3700
Fax: 82-2-32 7 2- 2 145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 1897 20
Te l: 65-6291-4755
Fax: 65-6297-1744
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road , Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
Darlington Transistors for Audio Amplifiers
STD02N and STD02P August, 2007
Sanken Electric Co., Ltd.
T02-014EA-070820
Europe
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Par k Pencoed, Bridgend CF35 5HY. UK
Te l: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-8 5 3- 3 353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-4 6 0- 7 837
