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tm
November 2007
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C www.fairchildsemi.com
1
FDC365P P-Channel PowerTrench® MOSFET
FDC365P
P-Channel PowerTrench® MOSFET
-35V, -4.3A, 55mΩ
Features
Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Applications
Inverter
Power Supplies
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -35 V
VGS Gate to Source Voltage ±20 V
ID -Continuous (Note 1a) -4.3 A
-Pulsed -20
PDPower Dissipation (Note 1a) 1.6 W
Power Dissipation (Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156
Device Marking Device Package Reel Size Tape Width Quantity
.365P FDC365P SSOT6 7’’ 8mm 3000 units
D
S
D
D
D
G
1
2
3
5
4
6
SuperSOTTM -6
G
S
D
D
D
D
Pin 1
FDC365P P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
2
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -35 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250µA, referenced to 25°C -26 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V -1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA-1 -1.8 -3 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250µA, referenced to 25°C 5.0 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = -10V, ID = -4.2A 45 55 mΩVGS = -4.5V, ID = -3.2A 70 80
VGS = -10V, ID = -4.2A, TJ = 125°C 69 90
gFS Forward Transconductance VDS = -10V, ID = -4.2A 8.7 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -20V, VGS = 0V,
f = 1MHz
530 705 pF
Coss Output Capacitance 105 135 pF
Crss Reverse Transfer Capacitance 55 80 pF
RgGate Resistance f = 1MHz 6.1 Ω
Switching Characteristics
td(on) Turn-On Delay Time VDD = -20V, ID = -4.2A,
VGS = -10V, RGEN = 6Ω
7 13 ns
trRise Time 3 10 ns
td(off) Turn-Off Delay Time 15 28 ns
tfFall Time 3 10 ns
QgTotal Gate Charge VGS = 0V to -10V VDD = -20V,
ID = -4.2A
11 15 nC
QgTotal Gate Charge VGS = 0V to -5V 6 9 nC
Qgs Gate to Source Charge 1.7 nC
Qgd Gate to Drain “Miller” Charge 2.2 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A (Note 2) -0.8 -1.2 V
trr Reverse Recovery Time IF = -4.2A, di/dt = 100A/µs 16 29 ns
Qrr Reverse Recovery Charge 7 14 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
78°C/W when mounted on a 1
in2 pad of 2 oz copper on FR-4
board.
156°C/W when mounted on a
minimum pad of 2 oz copper.
a. b.
FDC365P P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
3
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
012345
0
4
8
12
16
20
VGS = -4V
VGS = -10V
VGS = -3V
VGS = -3.5V
VGS = -4.5V
PULSE D U R ATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
048121620
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = -4V
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = -4.5V
VGS = -3V
VGS = -10V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = - 4.2A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Te mperature Figure 4.
246810
0
40
80
120
160
200
PULSE DU RATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
TJ = 25oC
ID = -4.2A
rDS(on), DRAIN TO
SOURCE ON- RESISTANCE (mΩ)
-VGS, GATE TO SOURC E V O L TAGE (V )
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
12345
0
4
8
12
16
20
VDS = -5V
PULSE DU RATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GA TE TO S O UR CE V OLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ = 150 oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
20
Source to Drain Diode
Forward Voltage vs Source Current
FDC365P P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
4
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
Figure 7.
036912
0
2
4
6
8
10 ID = -4.2A
VDD = -25V
VDD = -15V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -20V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
35
f = 1MHz
VGS = 0V
CAPACITAN CE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
Capacitance vs Drain
to Source Voltage
Figure 9.
0.1 1 10 100
0.01
0.1
1
10
TH IS AREA IS
LIMITED BY rDS(on)
0.1ms
1ms
100ms
30
1s
DC
10s
10ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 156oC/W
TA = 25oC
-ID, DRAIN CURREN T (A)
-VDS, DRAIN to SOURCE VOLTA GE (V)
Forward Bias Safe
Operating Area Figure 10.
10-4 10-3 10-2 10-1 110
100 1000
1
10
100
400 SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
VGS = -10V
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
0.5
Single Pulse Maximum Power Dissipation
Figure 11. Transient Thermal Response Cu rve
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMA L
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURA TION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
SINGLE PULSE
RθJA = 156oC/W
PDM
t1t2
NOTES:
DUTY FAC TOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
FDC365P P-Channel PowerTrench® MOSFET
www.fairchildsemi.com
5
©2007 Fairchild Semiconductor Corporation
FDC365P Rev.C
Dimensional Outline and Pad Layout
6www.fairchildsemi.com
FDC365P P-Channel PowerTrench® MOSFET
©2007 Fairchild Semiconductor Corpo ration
FDC365P Rev.C
Preliminary Datasheet
tm
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