RD28F1608C3T90 - Intel - Product.Network

3 Volt Advanced+ Stacked Chip Scale

Package Memory

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary Datasheet

Product Features

The 3 Volt Advanced+ Stacked Chip Scale Package (Stacked-CSP) memory delivers a feature-

rich solution for low-power applications. Stacked-CSP memory devices incorporate flash

memory and static RAM in one package with low voltage capability to achieve the smallest

system memory solution form-factor together with high-s peed , low-p ower operation s. The flas h

memory of f ers a pro tection r egist er and flexible block locking to enabl e ne xt generat ion securit y

capability. Combined with the Intel-developed Flash Data Integrat or (FDI) software, the

Stacked-CSP memory provides you with a cost-effective, flexible, code plus data storage

solution.

■Flash Memory Plus SRAM

—Reduces Memory Board Space

Required, Si mp li f yi ng PC B Des i gn

Complexity

■Stacked Chip Scale Package Technology

—Smallest Memory Subsystem Footprint

—16-Mbit Flas h + 2-Mbit SRAM:

Area: 8 mm by 10 mm, Height: 1.4 mm

—32-Mbit Fl as h + 8-Mbi t SRAM :

Area: 8 mm by 14mm, Height: 1.4 mm

—32-Mbit Flas h + 4-Mbi t SRAM,

16-Mbit Flas h + 4-Mbit SRAM:

Area: 8 mm by 12 mm, Height: 1.4 mm

■Advanced SRAM Technology

—70 ns Access Time

—Low Power Operation

—Low Voltage Data Retention Mode

■Flash Data Integrator (FDI) Software

—Real-Time Data Storage and Code

Execution in the Same Memory Device

—Full Flash File Manager Capability

■Advanced+ Boot Block Flash Memory

—90 ns 16-Mb Access Time at 2.7 V

—100 ns 32-Mb Access Time at 2.7 V

—1 10 ns 32-Mb Access T ime at 2.7 V with

8-Mbit SRAM

—Instant, Individual Block Locking

—128-bit Pr otection Register

—12 V Productio n Prog ramming

—Ultra Fast Program and Erase Suspend

—Extended Temperature –25 °C to +85 °C

■Blocking Archit ecture

—Block Sizes for Code + Data Storage

—4-Kword Parameter Blocks (for data)

—64-Kbyte Main Blocks (for code)

—100,000 Erase Cycles per Block

■Low Power Operation

—Async Read Current: 9 mA

—Standby Current: 10 µA

—A ut omatic Power Saving Mode

■0.25 µm ETOX™ VI Flash Technology

■Indust ry Compatibility

—Sourcing Flex ibility and Stability

Order Number: 290666-007

February, 2001

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

PRELIMINARY

Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any

intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no

liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties

relating to fitness for a particular purpose, merchantability , or infringement of any patent, copyright or other intellectual property right. Intel products are

not intended for use in medical, life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to the m.

The 28F1602C3, 28F1604C3, 28F3204C3 may contain design defects or errors known as errata which may cause the product to deviate from

published specifications. Current characterized errata are available on request.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calli ng 1-8 00-

548-4725 or by visiting Intel's website at http://www.intel.com.

*Other brands and names are the property of their respective owners.

PRELIMINARY iii

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Contents

1.0 Introduction..................................................................................................................1

1.1 Document Conventions.........................................................................................1

1.2 Product Overview..................................................................................................1

1.3 Package Ballout ....................................................................................................2

1.4 Signal Definitions...................................................................................................3

2.0 Principles of Operation............................................................................................5

2.1 Bus Operation .......................................................................................................5

2.1.1 Read.........................................................................................................5

2.1.2 Output Disable..........................................................................................6

2.1.3 Standby....................................................................................................6

2.1.4 Flash Reset ..............................................................................................7

2.1.5 Write.........................................................................................................7

3.0 Flash Memory Modes of Operation.....................................................................7

3.1 Read Array (FFh) ..................................................................................................7

3.2 Read Identifier (90h)..............................................................................................7

3.3 Read Status Register (70h)...................................................................................8

3.3.1 Clear Status Register (50h)......................................................................8

3.4 Read Query (98h)..................................................................................................9

3.5 Word Program (40h/10h).......................................................................................9

3.5.1 Suspending and Resuming Program (B0h/D0h)......................................9

3.6 Block Erase (20h)................................................................................................10

3.6.1 Suspending and Resuming Erase (B0h/D0h) ........................................10

3.7 Instant, Individual Block Locking.........................................................................12

3.7.1 Block Locking Operation Summary........................................................12

3.7.2 Locked State ..........................................................................................13

3.7.3 Unlocked State.......................................................................................13

3.7.4 Lock-Down State....................................................................................13

3.7.5 Reading a Block’s Lock Status...............................................................13

3.7.6 Locking Operation during Erase Suspend..............................................14

3.7.7 Status Register Error Checking..............................................................14

3.8 128-Bit Protection Register .................................................................................15

3.8.1 Reading the Protection Register ............................................................15

3.8.2 Programming the Protection Register (C0h) ..........................................15

3.8.3 Locking the Protection Register .............................................................16

3.9 Additional Flash Features....................................................................................16

3.9.1 Improved 12 Volt Production Programming ...........................................16

3.9.2 F-VPP £ VPPLK for Complete Protection ..............................................17

4.0 Electrical Specifica ti ons........................................................................................17

4.1 Absolute Maximum Ratings.................................................................................17

4.2 Operating Conditions...........................................................................................18

4.3 Capacitance ........................................................................................................18

4.4 DC Characteri stic s ...... ....... ...... ....... ...... ...... .......................... .......................... ....1 9

4.5 Flash AC Characteristics—Read Operations......................................................23

4.6 Flash AC Characteristics—Write Operations......................................................25

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iv PRELIMINARY

4.7 Flash Erase and Program Timings(1).................................................................26

4.8 Flash Reset Operations ......................................................................................28

4.9 SRAM AC Characteristics—Read Operations(1)................................................29

4.10 SRAM AC Characteristics—Write Operations (1, 2).... ....... ...... ....... ...... ....... ...... .31

4.11 SRAM Data Retention Characteristics(1) —Extended Temperature ..................32

5.0 Migration Guide Information...............................................................................33

6.0 System Design Considerations ..........................................................................34

6.1 Background.........................................................................................................34

6.1.1 Flash + SRAM Footprint Integration.......................................................34

6.1.2 Advanced+ Boot Block Flash Memory Features....................................34

6.2 Flash Control Considerations..............................................................................34

6.2.1 F-RP# Connected to System Reset.......................................................35

6.2.2 F-VCC, F-VPP and F-RP# Transition.....................................................35

6.3 Noise Redu ction............. ............................................. .......................... ..............36

6.4 Simultaneous Operation......................................................................................37

6.4.1 SRAM Operation during Flash “Busy”....................................................38

6.4.2 Simultaneous Bus Operations................................................................38

6.5 Printed Circuit Board Notes.................................................................................38

6.6 System Design Notes Summary.........................................................................38

7.0 Ordering Informat ion..............................................................................................39

8.0 Additional Information...........................................................................................39

Appendix A Program/Erase Flowcharts.............................................................................40

Appendix B CFI Query Structure...........................................................................................46

Appendix C Word-Wide Memory Map Diagrams.............................................................53

Appendix D Device ID Table....................................................................................................55

Appendix E Protection Register Addressing...................................................................56

Appendix F Mechanical and Shipping Media Details...................................................57

PRELIMINARY v

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Revision History

Date of

Revision Version Description

03/30/99 -001 Original version

04/26/99 -002 Correc ted title headings in Appendix B

Removed reference to 8-Mbit devices, Appendix B, Table B7, Device Geometry

Definition

Corrected 4-Mb SRAM ICC2 specification

06/15/99 -003 Remov ed extra SRAM standby mod e

Clarified Locking Operations Flowchart (Appendix A)

08/11/99 -004 Added 16Mbit Flash + 4Mbit SRAM product references

Clarified Operating Mode Table (Section 4.1.2)

Clarified “Unlock” in Command Bus Definitions Table (Section 5.0)

Updated DC characteristics VIL ,VIH ,and ICCD (Section 9.4)

Updated AC characteristics tEHQZ (Section 9.5)

Updated AC characteristics tLZ (Section 9.9)

Removed 3.0-3.3V specifications (Section 9.5 and Section 9.6)

01/20/00 -005 Increased Eras e Cycles per Block to 1,000,000

Pinout Update (Figure 1)

Operating Modes clarificati ons (Table 3)

Clarified product proliferations

Structure/Text of document simplified for readability

Datasheet changed to “Preliminary” st atus

08/09/00 -006 Changed Eras e Cycles per Block to 100,000 (Section 1.2)

Pinout Update (Figure 1)

Added Operating Modes S-UB# and S-LB# (Table 2)

Changed Minimum Tempera ture Spec from –40°C to –25°C (S ection 4.1 and

Table 9)

Added 8-Mb SRAM specifications (Section 4.4, DC Characteristics, and Section

4.9)

Changed VCC1 to VCC, Changed S-CS#1 to S-CS1# (Section 4.11)

01/30/01 -007 Added note to Figure 1

Updated Figure 2

Clarified S-UB# and S-LB# functions in Table 2 and Section 2.1

Changed ICCS Spec from 20µA to 40µA in Table 10, DC Characteristics

Changed IDR Max spec from 35µA to 6µA in Table 18

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 1

1.0 Introduction

This document contains the specifications for the 3 Volt Advanced+ Stacked Chip Scale Package

(Intel® Stacked-CSP) memory. These stacked memory solutions are offered in the following

combinations: 32-Mbit flash + 8-Mbit SRAM, 32-Mbit flash + 4-Mbit SRAM, 16-Mbit flash +

4-Mbit SRAM, or 16-Mbit flash memory + 2-Mbit SRAM.

1.1 Document Conventions

Throughout this document, the following conventions have been adopted.

•Voltages: “2.7 V” refers to the full voltage range, 2.7 V–3.3V; 12 V refers to 11.4 V to 12.6 V

•Main bloc k(s): 32-Kword block

•Parameter block(s): 4-Kword block

1.2 Product Overview

The 3 Volt Advanced+ Stacked-CSP combines flash and SRAM into a single package.

The Intel Stacked-CSP memory provides secure low-voltage memory solutions for portable

application s. This memory family combines t wo memory technologi es , flash memo ry and SRAM,

in one package. The flash memory delivers enhanced security features, a block locking capability

that allows instant locking / unlo cking of any flas h block with zero-latency, and a 128-bit p rotection

applications. Improved 12 V production programming can be used to improve factory throughput.

NOTE: 1. All words are 16 bits each.

The flash device is asymmetrically-blocked to enable system integration of code and data storage

in a single device. Each flash block can be erased independently of the others up to 100,00 0 times.

The flash has eight 8-KB parameter blocks located at either the top (denoted by -T suffix) or the

bottom (-B suffix) of the address map in order to accommodate different microprocessor protocols

for kernel code locat ion. The remaini ng flas h memory is group ed into 32-Kwo rd main bl ocks. An y

individual flash block can be locked or unlocked instantly to provide complete protection for code

or data (see Section 4.7, “Flash Erase and Program Timings(1)” on page 26 for details).

The flash contains both a Command User interface (CUI) and a Write State Machine (WSM). The

CUI serves as the interface between the microcontroller and the internal operation of the flash

memory. The internal WSM automatically executes the algorithms and timings necessary for

Table 1. Block Organization (x16)(1)

Memory Device Kwords

32-Mbit Flash 2048

16-Mbit Flash 1024

2-Mbit SRAM 128

4-Mbit SRAM 256

8-Mbit SRAM 512

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2Preliminary

program and erase operations, including verification, thereby unburdening the microprocessor or

microcontroller. The flash’s status register indicates the status of the WSM by signifying block

erase or word program completion and status.

Flash program and erase automation allows program and erase operations to be executed using an

industry-standard two-write command seque nce to the CUI . Program operations are perfor med in

word increments. Erase ope rations erase all locations within a b lock simultaneously. Both program

and erase operati ons can be sus pended by the system s oftware in or der to rea d from any o ther flash

block. In addition, data can be programmed to another flash block during an erase suspend.

3 Volt Advanced+ Stacked-C SP memories offer two low-power savings features: Automatic Power

Savings (APS) for flash mem ory and standby mod e for flas h and SRAM. The d evice automatically

enters APS mode following the completion of a read cycle from the flash memory. Standby mode

is initiated when th e system deselects the device by drivi ng F-CE# and S-CS1# or

S-CS2 inactive. Power savings features significantly reduce power consumption.

The flash memory can be reset by lowering F-RP# to GND. This provides CPU-memory reset

synchro nization and addition al protecti on against bus nois e that may occur during sy stem reset and

power-up/-down sequences.

1.3 Package Ballout

72-

NOTES:

1. F lash upgrade addres s lines are shown for A21 (64-Mbit flash) and A22 (128-M b it flash). In all flash and

SRAM combinations, 66 balls are populated (A21 and A22 are not populated). Location A10 is “NC” on 16/2

devices only.

2. To maintain compatibility with all JEDEC Variation B options for this ball location C6, this C6 land pad should

be connected directly to the land pad for ball G4 (A17).

Figure 1. 68-Ball Stacked Chip Scale Package

1 2 3 4 5 6 7 8

NC A

S-WE#

F-WE# NC A

S-V

F-WP# V

S-LB# S-UB# S-OE# DQ

NC NC A

F-CE# F-V

F-RP# A

S-CS

9 10 11 12

F-V

S-CS

F-OE# NC NC

S-V

F-V

Top View, Balls Down

F-V

CCQ

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 3

1.4 Signal Definitions

Table 2. defines the signal definitions shown in the previous ballout.

Table 2. 3 Volt Advanced+ Stacked-CSP Ball Descriptions (Sheet 1 of 2)

Symbol Type Name and Function

A0–A20 INPUT

ADDRESS INPUTS for memory addresses. Addres ses are internally latched during a program or

erase cycle.

Flash: 16-Mbit x 16, A[0-19]; 32-Mbit x 16, A[0-20]

SRAM: 2-Mbit x 16, A[0-16]; 4-Mbit x 16, A[0-17];8-Mbit x 16, A[0-18]

DQ0–

DQ15 INPUT /

OUTPUT

DATA INPU TS/OUTPUTS : Inputs array dat a for SRAM write operations and on the second F-CE#

and F-WE# cycle during a flash Program command. Inputs commands to the flash’s Command

User Interface when F-CE# and F-WE# are active. Data is internally latched. Outputs array,

configuration and status register data. The data balls float to tri-state when the chip is de-selected

or the outputs are disabled.

F-CE# INPUT FLASH CHIP ENABLE: Activates the flash internal control logic, input buffers, decoders and

sense amplifiers. F-CE# is active low . F-CE# high de-selects the flash memory device and reduces

power consumption to standby levels.

S-CS1# INPUT SRAM CHIP SELECT1: Activates the SRAM internal control logic, input buffers, decoders and

sense amplifiers. S-CS1# is active low. S-CS1# high de-selects the SRAM memory device and

reduces power consumption to standby levels.

S-CS2INPUT SRAM CHIP SELECT2: Activates the SRAM internal control logic, input buffers, decoders and

sense amplifiers. S-CS2 is active high. S-CS2 low de-selects the SRAM memory device and

reduces power consumption to standby levels.

F-OE# INPUT FLASH OUTPUT ENABLE: Enables flash’s outputs through the data buffers during a read

operation. F-OE# is active low.

S-OE# INPUT SRAM OUTPUT ENABLE: Enables SRAM’s outputs through the data buffers during a read

operation. S-OE# is active low.

F-WE# INPUT FLASH WRITE ENABLE: Controls writes to flash’s command register and memory array. F-WE#

is active low. Addresses and data are latched on the rising edge of the second F-WE# pulse.

S-WE# INPUT SRAM WRITE ENABLE: Controls writes to the SRAM memory array. S-WE# is active low.

S-UB# INPUT SRAM UPPER BYTE ENABLE: Enables the upper bytes for SRAM (DQ8–DQ15).

S-UB# is active low. S-UB# and S-LB# must be tied together to restrict x16 mode.

S-LB# INPUT SRAM LOWER BYTE ENABLE: Enables the lower bytes for SRAM (DQ0–DQ7).

S-LB# is active low. S-UB# and S-LB# must be tied together to restrict x16 mode.

F-RP# INPUT

FLASH RESET/DEEP POWER-DOWN: Uses two voltage levels (VIL, VIH) to control reset/deep

power-down mode .

When F-RP# is at logic low, the device is in reset/deep power-down mode, which drives the

outputs to High-Z, resets the Write State Machine, and minimizes curr ent levels (ICCD).

When F-RP# is at logic high, the device is in stan dard operation. When F-RP# transitions from

logic-low to logic-high, the device resets all blocks to locked and defaults to the read array mode.

F-WP# INPUT

FLASH WRIT E PR OTECT: Controls the lock-down function of the flexible Locking feature.

When F-WP# is a logic low, the lock-down mechanism is enabled and blocks marked lock-

down cannot be unlocked through software.

When F-WP# is logic high, the lock-down mechanism is disabled and blocks previously

locked-down are now locked and can be unlocked and locked through software. After F-WP# goes

low, any blocks previously marked lock-down revert to that state.

See Section 6.0, “Syst em Design Considerat ions” on page 34 for details on block locking.

F-VCC SUPPLY FLASH POWER SUPPLY: [2.7 V–3.3 V] Supplies power for device core operations.

F-VCCQ SUPPLY FLASH I/O PO W ER SUPPLY: [2.7 V–3.3 V ] Supplies power for device I/O operations.

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

4Preliminary

S-VCC SUPPLY SRAM POW ER SUPPLY: [2.7 V–3.3 V] Supplies power for device operations.

See Section 6.2.2, “F-VCC, F-VPP and F-RP# Transition” on page 35 for details of power

connections.

F-VPP INPUT /

SUPPLY

FLASH PROGRAM/ERASE POWER SUPPLY: [1.65 V–3.3 V or 11.4 V–12.6 V] Operates as an

input at logic levels to control complete flash protection. Supplies power for accelerated flash

program and erase operations in 12 V ± 5% range. This ball cannot be left floating.

Lower F-VPP ≤ VPPLK, to protect all contents against Program and Erase commands.

Set F-VPP =F-VCC for in-system read, program and erase operations. In this configuration,

F-VPP can drop as low as 1.65 V to allow for resistor or diode drop from the system supply. Note

that if F-VPP is driven by a logic signal, VIH = 1.65 V. That is, F-VPP must remain above 1.65 V to

perform in-system flash modifications.

Raise F-VPP to 12 V ± 5% for faster program and erase in a production environment. Applying

12 V ± 5% to F-VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500

cycles on the parameter blocks. F-VPP may be connected to 12 V for a total of 80 hours maximum.

F-GND SUPPLY FLASH GROUND: For all internal circuitry. All ground inputs must be connected.

S-GND SUPPLY SRAM GROUND: For all internal circuitry. All ground inputs must be connected.

NC NOT CONNECTED: Internally disconnected within the device.

Table 2. 3 Volt Advanced+ Stacked-CSP Ball Descriptions (Sheet 2 of 2)

Symbol Type Name and Function

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 5

2.0 Principles of Operation

The flash memory utilizes a CUI and automated algorithms to simplify program and erase

operations. The WSM automates program and erase operations by handling data and address

latche s, WE#, and syste m status requests.

2.1 Bus Operation

All bus cycles to or from the Stacked-CSP conform to standard microcontroller bus cycles. Four

control signals dictate the data f low in an d o ut o f the flash com pon ent: F-CE#, F-OE# , F-WE# and

F-RP#. Four separate control signals handle the data flow in and out of the SRAM component:

S-CS1#, S-CS2, S-OE#, and S-WE#. S- UB# and S-LB# must be ti ed toget her to restrict x16

operation. These bus operations are summarized in Table 2 and Table 3.

2.1.1 Read

The flash memory has four read modes: read array, read identifier, read status and read query.

These flash memory read modes are not dependent on the F-VPP voltage. Upon initial device

power-up or after exit from reset, the flash device automatically defaults to read array mode. F-CE#

and F-OE# must be driven active to obtain data from the flash component.

Figure 2. 3 Volt Advanced+ Stacked Chip Scale Package Block Diagram

1,048,576 x16 bit (16 Mbit)

2,097,152 x16 bit (32 Mbit)

3 Volt Advanced+ B oot Blo ck

Flash Memory

131,072 x16 bit (2 Mbit)

262,144 x16 bit (4 Mbit)

524,288 x16 bit (8 Mbit)

SRAM

F-CE#

F-OE#

F-WE#

F-RP#

F-WP#

A17-19/A18-20

A0-16/A0-17

/ A0-18

S-CS1#

S-CS2

S-OE#

S-WE#

S-UB# / SB#

DQ0-15

S-VCC S-GND

F-VPP

F-VCC F-GND F-VCCQ

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6Preliminary

The SRAM has one read mode available. S-CS1#, S-CS2, and S-OE# must be driven active to

obtain data from the SRAM device. See Table 3, “Recommended Memory System Operating

Mode Summary” on page 6 for a summary of operations.

NOTES:

1. Signals S-UB# and S-LB# must be tied together.

2. Two devices may not drive the memory bus at the same time.

3. Allowable flash read modes include read array, read query, read configuration, and read status.

4. S RAM is enabled and/or disabled with the logical function: S-CS1# OR S-CS2

5. Outputs are dependent on a separate device controlling bus outputs.

6. Modes of the flash and SRAM can be interleaved so that while one is disabled, the other controls outputs.

7. T he SRA M may be placed into data retention mode by lowering the S-VCC to the VDR range, as specified.

Simultaneous operations can exist, as long as the operations are interleaved such that only one

device attempts to contr ol the bus outputs at a time.

2.1.2 Output Disable

With F-OE# and S-OE# inactive, the Stacked-CSP outputs signals are placed in a high-impedance

state.

2.1.3 Standby

With F-CE# and S-CS1# or S-CS2 inactive, the Stacked-CSP enters a standby mode, which

substantially reduces device power consumption. In standby, outputs are placed in a high-

impedance state independent of F-OE# and S-OE#. If the flash is deselected during a program or

erase operation, the flash continues to consume active power until the program or erase operation is

complete.

Table 3. Recommended Memory System Operating Mode Summary

Modes

Flash Signals SRAM Signals Memory Output

Notes

F-RP#

F-CE#

F-OE#

F-WE#

S-CS1#

S-CS2

S-OE#

S-WE#

S-UB#,S-LB#(1)

Memory Bus Control

D0–

D15

FLASH

Read H L L H SRAM must be in High Z Flash DOUT 2,3,4

Write H L H L Flash DIN 2,4

Standby H H X X

Any SRAM mode is allowable

Other High Z 5,6

Output Disable H L H H Other High Z 5,6

Reset L X X X Other High Z 5,6

SRAM

Read FLASH must be in High Z LHLHLSRAMD

OUT 2,4

Write L H H L L SRAM DIN 2,4

Standby

Any FLASH mode is allowable

HXXXX

Other High Z 4,5,6

XLXXX

Output Disable L H H H X Other High Z 4,5,6

Data Retention same as a standby Other High Z 4,5,7

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 7

2.1. 4 Fl ash Reset

The device enters a reset mode when RP# is driven lo w. I n reset m o de, internal circuitry is turned

off and outputs are placed in a high-impedance state.

After return from reset, a time tPHQV is required until outputs are valid, and a delay (tPHWL or

tPHEL) is required before a write sequence can be initiated. After this wake-up interval, normal

operation is restored. The device defaults to read array mode, the status register is set to 80h, and

the read configuration register defaults to asynchronous reads.

If RP# is taken low du ring a blo ck erase or p rogram operation , the operation will be abort ed and the

memory contents at the aborted location are no longer valid.

2.1.5 Write

Writes to flash take place when both F-CE# and F-WE# are low and F-OE# is high. Writes to

SRAM take place when both S-CS1# and S-WE# are low and S-OE# and S-SC2 are high.

Commands are written to the flash memory’s Command User Interface (CUI) using standard

microprocessor write timings to control flash operations. The CUI does not occupy an addressable

memory location within the flash component. The address and data buses are latched on the rising

edge of the second F-WE# or F-CE# pulse, whichever occurs first. (See Figure 6 and Figure 7 for

read and write waveforms.)

3.0 Flash Memory Modes of Operation

The flash memory ha s fo ur read modes: read array, read configuration, read s tatus, and read query.

The write modes are program and erase. Three additional modes (erase suspend to program, erase

suspend to read and program suspend to read) are available only during suspended operations.

These modes are reached using the commands summarized in Table 5, “Flash Memory Command

Definitions” on page 11.

3.1 Read Array (FFh)

When F-RP # transitions from VIL (reset) to VIH, the device defaults to read array mode and will

respond to the read control in puts without any additional CUI commands.

In addition, the address of the desired location must be applied to the address balls. If the device is

not in read array mode, as would be the case after a program or erase operation, the Read Array

command (FFh) must be written to the CUI before array reads can take place.

3.2 Read Identifier (90h)

The read configuration mode outpu ts the manufacturer/device identifier. The device is switched to

this mode by writing the read configuration command (90h). Once in this mode, read cycles from

addresses shown in Table 4, “Read Configuration Table” on page 8 retrieve the specified

information. To return to read array mode, write the Read Array command (FFh ) .

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

8Preliminary

The Read Configuration mode outputs three types of information: the manufacturer/device

identifier, the block locking status, and the protection register. The device is switched to this mode

by writing the Read Configuration command (90h). Once in this mode, read cycles from addresses

shown in Table 4 retrieve the specified information. To return to read array mode, write the Read

Array command (FFh).

NOTES:

1. See Section 3.7 for valid lock status outputs.

2. “XX” specifies the block address of lock configuration being read.

3. See Section 3.8 for protection register information.

Other locations within the configuration address space are reserved by Intel for future use.

3.3 Read Status Register (70h)

The status register indicates the status of device operations, and the success/failure of that

operation. The Read Status Register (70h) command causes subsequent reads to output data from

the status register until anothe r comm and is issued. To retur n to reading from the array, issue a

Read Array (FFh) command.

The status register bits are output on DQ 0–DQ7. The up per by t e, DQ8–DQ15, outpu ts 00h d ur in g a

Read Status Register command .

The contents of the status register are latched on the fallin g edge of F-OE# or F-C E #, whichever

occurs last. This prevents possible bus errors which might occur if status register contents change

while being read. F-CE# or F-OE# must be toggled with each subsequent status read, or the status

When the WSM is active, SR.7 will indicate the status of the WSM; the remaining bits in the status

Table 6, “Flash Memory Status Regis t er Defin iti on ” on page 12).

3.3.1 Clear Status Register (50h)

The WSM sets statu s b its 1 through 7 to “1,” and clears bits 2, 6 and 7 to “0,” but cannot clear

status b its 1 or 3 thro ugh 5 to “0.” Because bits 1, 3, 4 and 5 indicate various error conditions, these

bits can only be cleared through the use of the Clear Status Register (50h) command. By allowing

the system software to control the resetting of these bits, several operations may be performed

(such as cumulatively pro gramming several addresses or erasing multiple blocks in sequence)

Table 4. Read Configuration Table

Item Address Data

Manufacturer Code (x16) 00000 0089

Device ID (See Appendix D) 00001 ID

Block Lock Configuration(1) XX002(2) LOCK

•Block Is Unlocked DQ0=0

•Block Is Locked DQ0=1

•Block Is Locked-Down DQ1=1

Protection Register Lock380 PR-LK

Protection Register (x16) 81-88 PR

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 9

before reading the status register to determine if an error occurred during that series. Clear the

status register before beginning ano ther command or sequence. Note that the Read Array command

must be issued before data can b e read fr om the mem ory array. Resetting the device also clears the

status register.

3.4 Read Query (98h)

The read query m ode outputs Common Flash Interface (CFI) data when the device is read. This can

be accessed by writing the Read Query Command (98h). The CFI data structure contains

information such as block size, density, command set and electrical specifications. Once in this

mode, read cycles from addresses shown in Appendix B retrieve the specified information. To

return to read array mode, write the Read Array command (FFh).

3.5 Word Program (40h/10h)

Programming is executed using a two-write sequence. The Program Setup command (40h) is

written to the CUI followed by a second write which specifies the address and data to be

programmed. The WSM will execute a sequence of internally timed events to program desired bits

of the addressed location, then verify the bits are sufficiently programmed. Programming the

memory results in specific bits within an address location being changed to a “0.” If the user

attempts to program “1”s, the memory cell contents do not change and no error occurs.

The status register indicates programming status: while the program sequence executes, status bit 7

is “0.” The status register can be polled by toggling either F-CE# or F-OE#. While programming,

the only valid commands are Read Status Register, Program Suspend, and Program Resume.

When programming is complete, the program status bits should be checked. If the programming

operation was unsuccessful, bit SR.4 of the status register is set to indicate a program failure. If

SR.3 is set then F-VPP was not within acceptable limits, and the WSM did not execute the program

command. If SR.1 is set, a program operation was attempted on a locked block and the operation

was aborted.

The status register should be cleared before attempting the next operation. Any CUI instruction can

follow after programming is completed; however, to prevent inadvertent status register reads, be

sure to reset the CUI to read array mode.

3.5.1 Suspending and Resuming Program (B0h/D0h)

The Program Suspend command halts an in-progress progr am ope ratio n so tha t data ca n be read

from other locations of memory. Once the programming process starts, writing the Program

Suspend command to the CUI requests that the WSM suspend the program sequence (at

predetermined poin ts in t he program al gorit hm). The device cont inues t o outpu t stat us re gister data

after the Program Susp end command is written. Polling status register bits SR.7 and SR.2 will

determine when the program operation ha s b een s uspended (both will be set to “1”). tWHRH1/

tEHRH1 specify the program suspend latency.

A Read Array command can be written to the CUI to read data from any block other than the

suspended block. The only other valid commands, while program is suspended, are Read Status

command is written to the flash memo r y, the WSM will continue with the programming process

and status register bits SR.2 and SR.7 will automatically be cleared. The device automatically

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

10 Preliminary

outputs status register data when read (see Appendix A, Program Suspend/Resume Flowcharts)

after the Program Resume command is written. F-VPP must remain at the same F-VPP level used

for program whil e i n program suspend mode. F-RP# must a lso remain at VIH.

3.6 Block Erase (20h)

To erase a block, write the Erase Set-up and Erase Confirm commands to the CUI, along with an

address identifying the block to be erased. This address is latched internally when the Erase

Confirm command is issued. Block erasure results in all bits within the block being set to “1.” Only

one block can be erased at a time. The WSM will execute a sequence of internally timed events to

program all bits within the block to “0,” erase all bits within the block to “1,” then verify that all

bits within the block are sufficiently erased. While the erase executes, status bit 7 is a “0.”

When the status register indicates that erasure is complete, check the erase status bit to verify that

the erase operation was successful. If the Erase operation was unsuccessful, SR.5 of the status

after the Erase Confirm command was issued, the WSM will not execute the erase sequence;

instead, SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to

ide ntify that F- VPP supply voltage was not within acceptable limits.

After an erase operation, clear the status register (50h) before attempting the next operation. Any

CUI instruction can follow after erasure is completed; however, to prevent inadvertent status

3.6.1 Suspending and Resuming Erase (B0h/D0h)

Since an erase oper ation r equires on the or der of seconds to comp lete, an Eras e Sus pend comm and

is provided to allow erase-sequence interruption in order to read data from or program data to

another block in memory. Once the erase sequence is started, writing the Erase Suspend command

to the CUI suspends the erase sequence at a predetermined point in the erase algorithm. The status

specified by tWHRH2/tEHRH2.

A Read Array/Program comm a nd can no w be written to the CUI to read/program data from/to

blocks other than that which is suspended. This nested Program command can subsequently be

suspended to read yet another location. The only valid commands while erase is suspended are

Read Status Register, Read Configuration, Read Query, Program Setup, Program Resume, Erase

Resume, Lock Block, Unlock Block and Lock-Down Block. During erase suspend mode, the chip

can be placed in a pseudo-standby mode by taking F-CE# to VIH. This reduces active current

consumption.

Erase Resume continu es the erase sequence wh en F-CE# = VIL. As with the end o f a standard erase

operation, the status register must be read and cleared before the next instruction is issued.

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 11

NOTES:

1. W hen writing commands , the upper data bus [DQ8–DQ15] should be either VIL or VIH, to min i mize c u rr e n t

draw.

2. Following the Read Configuration or Read Query commands, read operations output device configuration or

CFI query information, respectively.

3. E ither 40h or 10h command is valid, but the Intel standard is 40h.

4. W hen unlocking a block, WP# must be held for three clock cycles (1 clock cycle after the second command

bus cycle).

Table 5. Flash Memory Command Definitions

Command Note F i rst Bus Cycle Second Bus Cycle

Operation Address Data Operation Address Data

Read Array 1 Write X FFh

Read Identifier 1, 2 Write X 90h Read IA ID

Read Query 1, 2 Write X 98h Read QA QD

Read Status Register 1 Write X 70h Read X SRD

Clear S tatus Register 1 Write X 50h

Word Program 1, 3 W rite X 40h/10h Write PA PD

Block Erase/Confirm 1 Write X 20h Write BA D0h

Program/Erase Suspend 1 Write X B0h

Program/Erase Resume 1 Write X D0h

Lock Block 1 Write X 60h Write BA 01h

Unlock Block 1, 4 Write X 60h Write BA D0h

Lock-Down Block 1 Write X 60h Write BA 2Fh

Protection Register Program 1 Write X C0h Write PA PD

Lock Protection Register 1 Write X C0h Write P A FFFD

X=Don’t Care PA = Program Address BA = Block Address I A = Identifier Address QA = Query Address

SRD = Status Register Data PD = Program Data ID = I dent ifier Data QD = Query Data

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

12 Preliminary

NOTE: A Command Sequence Error is indicated when SR.4, SR.5 and SR.7 are set.

3.7 Instant, Individual Block Locking

The instant, individual block locking feature that allows any flash block to be locked or unlocked

with no latency, which enables instant code and data protection.

Thi s locking offe rs two l evels of prot ection. The fi rst level allows software-only control of block

locking (useful for data bl ocks th at chang e frequently), while the second level requires hardware

interaction before locking can be changed (useful for code blocks that change infrequently).

The following sections will discuss the operation of the locking system. The term “state [XYZ]”

will be used to specify locking states; e.g., “state [001],” where X = value of WP#, Y = bit DQ1 of

the Block Lock status register, and Z = bit DQ0 of the Block Lock status register. Table 8, “Block

Locking State Transitions” on page 15 defines all of these possible locking states.

3.7.1 Blo ck Loc king Opera tion Summary

The following concisely summarizes the locking function ality.

Table 6. Flash Memory Status Register Definition

WSMS ESS ES PS VPPS PSS BLS R

76543210

NOTES:

SR.7 WRITE STATE MACHINE STATUS

1 = Ready (WSMS)

0=Busy

Check Write State Machine bit first to determine Word Program or

Block Erase completion, before checking Program or Erase St atus

bits.

SR.6 = ERASE-SUSPEND STATUS (ESS)

1 = Erase Suspended

0 = Erase In Progress/Com pleted

When Erase Suspend is issued, WSM halts execution and sets

both WSMS and ESS bits to “1.” ESS bit remains set to “1” until an

Erase Resume command is issued.

SR.5 = ERASE STATUS (ES)

1 = Error In Block Erase

0 = Successful Block Erase

When thi s bi t is set to “1,” WSM has applied the max. number of

erase pulses and is still unable to verify successful block erasure.

SR.4 = PROGRAM STATUS (P S )

1 = Error in Programming

0 = Successful Programm ing

When thi s bi t is set to “1,” WSM has attempted but failed to

program a word/byte.

SR.3 = F-VPP STATUS (VPP S)

1=F-V

PP Low Detect, Operation Abort

0=F-V

PP OK

The F-VPP status bit does not provide continuous indication of VPP

level. The WSM interrogates F-VPP level only after the Program or

Erase command sequences have been entered, and informs the

system if F-VPP has not been switched on. The F-VPP is also

checked before the operation is verified by the WSM. The F-VPP

status bit is not guaranteed to report accurate feedback between

VPPLK and VPP1 min.

SR.2 = P R O GRAM SUSPEND STATUS (P SS )

1 = Program Suspended

0 = Program in Progress/Completed

When Program Suspend is issued, WSM halts execution and sets

both WSMS and PSS bits to “1.” PSS bit remains set to “1” until a

Program Resume command is issued.

SR.1 = BLOCK LOCK STATUS

1 = Prog/Erase attempted on a locked block; Operation

aborted.

0 = No operation to locked blocks

If a program or erase operation is attempted to one of the locked

blocks, this bit is set by the WSM. The operation specified is

aborted and the device is returned to read status mode.

SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) This bit is reserved for future use and should be masked out when

polling the status register.

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 13

All blocks are locked when powered-up, and can be un lo cked or locked with the Unlock and Lock

commands.

•The Lock-Down command locks a block and prevents it from being unlocked when WP# = 0.

•When WP# = 1, Lock-Down is overridden and commands can unlock/lock locked-down

blocks.

•When WP# returns to 0, locked-down b locks return to Lock -Down.

•Lock-Down is cleared only when the device is reset or powered-down.

The locking status of each bloc k can set to Locked, Unlocked, and Lock-Down, each of which will

be described in the following sections. A comprehensive state table for the locking functions is

shown in Table 8 on page 15, and a flowchart for lock ing oper atio ns is shown in Figure 19 on

page 44.

3.7.2 Locked State

The default status of all blocks upon power-up or reset is locked (states [001] or [101]). Locked

blocks are fully protected from alteration. Any program or erase operations attempted on a locked

block will return an error on bit SR.1 of the status register. The status of a locked block can be

changed to Unlocked or Lock-Down using the appropriate software commands. Unlocked blocks

can be locked issuing the “Lock” comm and sequence, 60h followed b y 01h.

3.7.3 Unlocked State

Unlocked blocks (states [000], [100], [110]) can be programmed or erased. All unlocked blocks

return to the Locked state when the device is reset or powered down. The status of an unlocked

block can be changed to Locked or Locked-Down using the appropriate software commands. A

Locked block can be unlocked by writing the Unlock command sequence, 60h followed by D0h.

3.7.4 Lock-Down State

Blocks that are Locked-Down (state [011]) are protected from program and erase operations (just

like Locked blocks), bu t their protection status cannot be changed using software comm ands alone.

A Locked or Unlock ed block can be L ocked-do wn by writing the Lock -Down comman d sequence,

60h followed by 2Fh. Locked-Down blocks revert to the Locked state when the device is reset or

powered down.

The Lock-Down function is dependent on the WP# input ball. When WP# = 0, bl ocks in Lock-

Down [011] are pro t ected from prog ram, er ase, and lock s tatu s changes . When WP# = 1, the Lock-

Down function is disabled ([111]) and locked-down blocks can be individually unlocked by

software command to the [110] state, where they can be erased and pr ogrammed . These blocks can

then be re-locked [111] and unlocked [110] as desired while WP# remains high. When WP# goes

low, blocks that were previously locked-down return to the Lock-Down state [011] regardless of

any changes made while WP# was high. Device reset or power-down resets all blocks, including

those in Lock-Down, to Locked state.

3.7.5 Reading a Block’s Lock Status

The lock status of every block can be read in the configuration read mode of the device. To enter

this mode, write 90h to the device. Subsequent reads at Block Address + 00002 will output the lock

status of that block. The lock status is represented by the least significant outputs, DQ0 and DQ1.

DQ0 indicates the Block Lock/Unlock status and is set by the Lock command and cleared by the

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

14 Preliminary

Unlock command. It is also automatically set when entering Lock-Down. DQ1 indicates Lock-

Down status and is set by the Lock-Down command. It cannot be cleared by software, only by

device reset or power-down.

3.7.6 Locking Operation during Erase Suspend

Changes to block lock status can be performed during an erase suspend by using the standard

locking command s equen ces to u nlock, lock , o r lo ck-d own a block. This is us eful in the case when

another block needs to be updated while an erase operation is in progress.

To change block locking during an erase operation, first write the erase suspend command (B0h),

then check the status register until it indicates th at the erase operation has been suspended. Next

write the desired lock command sequence to a block and the lock status will be changed. After

completing any desired lock, read, or program operations, resume the erase operation with the

Erase Resume command (D0h).

If a block is locked or locked-down during a suspended erase of the same block, the locking status

bits will be changed immediately , b ut when the erase is resumed, the erase operation will complete.

Locking operations cannot be performed during a program suspend.

3.7.7 Status Register Error Checking

Using nested locking or program command sequences during erase suspend can introduce

ambiguity into status register results.

Since locking changes are performed using a two cycle command sequence, e.g., 60h followed by

01h to lock a block, following the Configuration Setup command (60h) with an invalid command

will produce a lock command error (SR.4 and SR.5 will be set to 1) in the status register. If a lock

command error occurs during an erase suspend, SR.4 and SR.5 will be set to 1, and will remain at 1

after the erase is resumed. When erase is complete, any possible error during the erase cannot be

detected via the status register because of the previous locking command error.

A similar situation happens if an error occurs during a program operation error nested within an

erase suspend.

Table 7. Block Lock Status

Item Address Data

Block Lock Configuration XX002 LOCK

• Block Is Unlocked DQ0=0

• Block Is Locked DQ0=1

• Block Is Locked-Down DQ1=1

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 15

NOTES:

1. “–” indicates no change in the current state.

2. In this table, the notation [XYZ] denotes the locking st ate of a block, where X = WP#, Y = DQ1, and Z = DQ0.

The current locking state of a block is defined by the state of WP# and the two bits of the block lock status

(DQ0, DQ 1). DQ0 indicates if a block is locked (1) or unlocked (0). DQ1 indicates if a block has been locked-

down (1) or not (0).

3. At power-up or device reset, all blocks default to Locked state [001] (if WP# = 0). holding WP# = 0 is the

recommended default.

4. T he “Erase/Program Allowed?” column shows whether erase and program operations are enabled (Yes ) or

disabled (No) in that block’s current locking state.

5. T he “Lock Command Input Result [Next State]” column shows the result of writing the three locking

commands (Lock, Unlock, Lock-Down) in the current locking state. For example, “Goes To [001]” would mean

that writing the command to a block in the current locking state would change it to [001].

6. The 128-bits of the protection register are divided into two 64-bit segment s. One of the segments is

programmed at the Intel factory with a unique 64-bit number, which is unchangeable. The other segment is

left blank for customer designs to program as desired. Once the customer segment is programmed, it can be

locked to prevent reprogramming.

3.8 128-Bit Prote ction Register

The 3 Volt Advanced+ Stacked-CSP architecture includes a 128-bit protection register than can be

used to increase the security of a system design. For example, the number contained in the

protection register can be used to “mate” the flash component with other system components such

as the CPU or ASIC, preventin g device substitution.

3.8.1 Read ing the Protection Register

The protection register is read in the configuration read mode. The device is switched to this mode

by writing the Read Con figur ation co mmand (90 h). Once in this mo de, r ead cycles fro m ad dres ses

shown in Appendix E retrieve the specified information . To return to read array mode, write the

Read Array command (FFh).

3.8.2 Programming the Protection Register (C0h)

The protection register bits are programmed using the two-cycle Protection Program command.

The 64-bit number is programmed 16 bits at a time for word-wide parts. First write the Protection

Program Setup command, C0h. The next write to the device will latch in address and data and

program the specified location. The allowable addresses are shown in Appendix E. See Figure 20,

“Protection Register Programming Flowchart” on page 45.

Table 8. Block Locking State Transitions

Current State Erase/

Program

Allowed?

Next State after Command Input

WP# DQ1DQ0Name Lock Unlock Lock-Down

0 0 0 Unlocked Yes Go To [001] –Go To [011]

1 0 0 Unlocked Yes Go To [101] –Go To [111]

0 0 1 Locked (Default) No –Go To [000] Go To [011]

1 0 1 Locked No –Go To [100] Go To [111]

0 1 1 Locked-Down No –– –

110 Lock-Down

Disabled Yes Go To [111] –Go To [111]

1 1 1 No - Go To [110] –

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16 Preliminary

Any attempt to address Protection Program commands outside the defined protection register

address space will result in a status register error (program error bit SR.4 will be set to 1).

Attempting to progra m or to a previous ly locked protection register segment will result in a statu s

3.8.3 Locking the Protection Register

The user -progr ammable s egment of t he protect ion regi ster is l ockable by prog ramming Bi t 1 of th e

PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the

unique device number . This bit is set using the Protection Program command to program FFFDh to

the PR-LOCK location. After thes e bits have been progr ammed, no further changes can be made to

the values stored in th e protect ion r egis ter. A Protection Program command to locked word s will

result in a status register error (program error bit SR.4 and Lock Error bit SR.1 will be set to 1).

The protection register lockout state is not reversible.

0645_05

3.9 Additional Flash Features

Intel 3 Volt Advanced+ Stacked-CSP products provide in-system programming and erase in the

1.65 V–3.3 V range. For fast production programming, it also includes a low-cost, backward-

compatible 12 V programming feature.

3.9.1 Improved 12 Volt Production Programming

When F-VPP is between 1.65 V and 3.3 V, all program and erase current is drawn through the

F-VCC signal. Note that if F-VPP is driven by a log i c sig nal, VIH min = 1.6 5 V. T hat i s , F-VPP must

remain above 1. 65 V to perform in -system f lash modificati ons. When F-V PP is connected to a 12 V

power supply, the device draws program and erase current directly from the F-VPP signal. This

eliminates the need for an external switching transistor to control the voltage F-VPP. Figure 12,

“Example Power Supply Configurations” on page 35 shows examples of how the flash power

su pplies can be configured for various usage models.

Figure 3. Protection Register Memory Map

4 Words

Facto ry Pr ogrammed

4 Words

User Progra m med

PR-LOCK

88H

85H

84H

81H

80H

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 17

The 12 V F-VPP mode enhances programming performance during the short period of time

typically fo und in manufactur ing processes ; however , it is not intended for ext ended use. 12 V may

be applied to F-VPP during program and erase operations for a maximum of 1000 cycles on the

main blocks and 2500 cycles on the parameter blocks. F-VPP may be connected to 12 V for a total

of 80 hours maximum. Stressing the device beyond these limits may cause permanent damage.

3.9.2 F-VPP ≤ VPPLK for Complete Protection

In addition to the flexible block locking, the F-VPP programming voltage can be held low for

absolute hardware write protect ion of all blocks in the flash device. When F-VPP is below VPPLK,

any program or er ase operation will res ult in a error , promp ting the corresponding s tatus register bit

(SR.3) to be set.

4.0 Electrical Specifications

4.1 Absolute Maximum Ratings

NOTES:

1. M inimum DC voltage is –0.5 V on input/output balls. During transitions, this level may undershoot to –2.0 V

for periods < 20 ns. Maximum DC voltage on input/output balls is F-VCC / F-VCCQ / S-VCC + 0.5 V which,

during transitions, may overshoot to

F-VCC / F-VCCQ / S-V CC + 2.0 V for periods < 20 ns.

2. Maximum DC voltage on F-VPP may overshoot to +14.0 V for periods < 20 ns.

3. F-VPP voltage is normally 1.65 V–3.3 V. Connection to supply of 11.4 V–12.6 V can only be done for 1000

cycles on the main blocks and 2500 cycles on the parameter blocks during program/erase. F-VPP may be

connected to 12 V for a total of 80 hours maximum. See Section 3.9.1 for details

4. O utput shorted for no more than one second. No more than one output shorted at a time.

Warning: Stressing the device beyond the “Absolute Max imum Ratings” may cause permanent damage.

These are stress ratings only. Operation beyond the “Operating Conditi ons” is not recommended

and extended exposure beyond the “Operating Conditions” may aff ect device reliability.

Parameter Maximum Rating

Extended Operating Temperatur e

–25°C to +85°C

During Read

During Flash Block Erase and Program

Temper ature under Bias

S torage Temperature –65°C to +125°C

V oltage on Any Ball (except F-VCC /F-VCCQ / S-VCC and F-VPP) with Respect

to GND –0.5 V to +3.3 V(1)

F-VPP Voltage (for BLock Erase and Program) with Respect to GND –0.5 V to +13.5 V(1,2,4)

F-VCC / F-VCCQ / S-VCC Supply Voltage with Respect to GND –0.2V to +3.3 V

Output Short Circuit Current 100 mA(3)

NOTICE: This datasheet contains information on products in full production. The specifications are subject to

change without notice. V erify with your local Intel Sales office that you have the latest datasheet before finalizing a

design.

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18 Preliminary

4.2 Operating Cond ition s

NOTES:

1. F-VCC/F-VCCQ must share the same supply. F-VCC/S-VCC must share the same supply when not in data

retention.

2. A pplying F-VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. F-VPP may be connected to 12 V for a total of 80

hours maximu m. See Section 3.9.1 for details.

4.3 Capacitance

TA = +25°C, f = 1 MHz

NOTE: 1. Sampled, not 100% tested.

Table 9. Temperature and Voltage Operating Conditions

Symbol Parameter Notes Min Max Units

TAOperating Temperature –25 +85 °C

VCC / VCCQ F-VCC /F-VCCQ /S-VCC Supply

Voltage 12.73.3Volts

VPP1 Supply Voltage 1 1.65 3.3 Volts

VPP2 1, 2 11.4 12.6 V olts

Cycling Block Erase Cycling 2 100,000 Cycles

Sym Parameter Notes Typ Max Units Conditions

CIN Input Capacitance 1 16 18 pF VIN =0V

COUT Output Capacitance 1 20 22 pF VOUT =0V

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 19

4.4 DC Characterist ics

Table 10. DC Characteristics (Sheet 1 of 2)

Symbol Parameter Device Note 2.7 V – 3.3 V Unit Test Conditions

Typ Max

ILI Input Load Current Flash/

SRAM 1 ± 2µA

F-VCC/S-VCC =V

CC Max

VIN =V

CCMax or GND

ILO Output Leakage Current Flash/

SRAM 10.2 ± 10 µA F-VCC/S-VCC =V

CC Max

VIN =V

CC Ma x or GND

ICCS VCC Standby Current

Flash 1 10 25 µA

F-VCC =V

CC Max

F-CE# = F-RP# = VCC

F-WP# = VCC or GND

VIN =V

CC Max or GND

2-Mb

SRAM 1 - 10 µA S-VCC =V

CC Max

S-CS1#= V

CC, S-CS2= VCC

or S-CS2= GND

VIN =V

CC Max or GND

4-Mb

SRAM 1 - 20 µA

8-Mb

SRAM 1 - 40 µA

ICCD VCC Deep Power-Down Current Flash 1 7 25 µA F-VCC =V

CCMax

VIN =V

CC Max or GND

F-RP# = GND ± 0.2 V

ICC Operating Power Supply Current

(cycle time = 1 µs)

2-Mb

SRAM 1-7mA

IIO =0 mA, S-CS

1#=V

S-CS2= S-WE# = VIH

VIN =V

IL or VIH

4-Mb

SRAM 1-10mA

8-Mb

SRAM 1-20mA

ICC2 Operating Power Supply Current

(min cycle time)

2-Mb

SRAM 1-40mA

Cycle time = Min, 100% duty,

IIO =0 mA, S-CS

1#= V

IL,

S-CS2=V

IH, VIN =V

IL or VIH

4-Mb

SRAM 1-45mA

8-Mb

SRAM 1-50mA

ICCR VCC Read Current Flash 1,2 9 18 mA

F-VCC =V

CCMax

F-OE# = VIH, F-CE# = VIL

f = 5 MHz, IOUT =0 mA

VIN =V

IL or VIH

ICCW VCC Program Current Flash 1,3

18 55 mA F-VPP =V

PP1

Program in Progress

815mA

F-VPP =V

PP2 (12 V)

Program in Progress

ICCE VCC Erase Current Flash 1,3

16 45 mA F-VPP =V

PP1

Erase in Progress

815mA

F-VPP =V

PP2 (12 V)

Erase in Progress

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

20 Preliminary

NOTES:

1. All currents are in RMS unless otherwise noted. T y pical values at nominal F-VCC/S-VCC, TA= +25 °C.

2. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS

inputs).

3. Sampled, not 100% tested.

4. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw

is sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS

and ICCR.

ICCES VCC Erase Suspend Current Flash 1,3,4 10 25 µA F-CE# = VCC, Erase Suspend

in Progress

ICCWS VCC Program Suspend Current Flash 1,3,4 10 25 µA F-CE# = VCC, Program

Suspend in Progress

IPPD F-VPP Deep Power-Down Current Flash 1 0.2 5 µA F-RP# = GND ± 0.2 V

F-VPP ≤ VCC

IPPS F-VPP Standby Current Flash 1 0.2 5 µA F-VPP ≤ VCC

IPPR F-VPP Read Current Flash 12±15 µA F-VPP ≤ VCC

1,2 50 200 µA F-VPP ≥ VCC

IPPW F-VPP Program Current Flash 1,2

0.05 0.1 mA F-VPP =VPP1

Program in Progress

822mA

F-VPP =V

PP2 (12 V)

Program in Progress

IPPE F-VPP Erase Current Flash 1,2

0.05 0.1 mA F-VPP =V

PP1

Program in Progress

822mA

F-VPP =V

PP2 (12 V)

Program in Progress

IPPES F-VPP Erase Suspend Current Flash 1,2

0.2 5 µA F-VPP =V

PP1

Erase Suspend in Progress

50 200 µA F-VPP =V

PP2 (12 V)

Erase Suspend in Progress

IPPWS F-VPP Program Suspend Current Flash 1,2 0.2 5 µA F-VPP =V

PP1

Program Suspend in Progress

50 200 µA F-VPP =V

PP2 (12 V)

Program Suspend in Progress

Table 10. DC Characteristics (Sheet 2 of 2)

Symbol Parameter Device Note 2.7 V – 3. 3 V Unit Test Conditions

Typ Max

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 21

NOTES:

1. Erase and Program are inhibited when F-VPP < VPPLK and not guaranteed outside the valid F-VPP ranges of

VPP1 and VPP2.

2. Applying F-VPP =11.4V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. F-VPP may be connected to 12 V for a total of 80

hours maximum. See S ection 3.9.1 for details.

0645_07

NOTE: AC test inputs are driven at VCCQ for a logic “1” and 0.0V for a logic “0.” Input timing begins, and output

timing ends, at VCCQ/2. Input rise and fall times (10%–90%) <10 ns. Worst case speed conditions are

when VCCQ = VCCQMin.

Table 11. DC Characterist ics, Con tinue d

Symbol Parameter Device Note 2.7 V – 3.3 V U nit Test Conditions

Min Max

VIL Input Low Voltage Flash/

SRAM –0.2 0.6 V

VIH Input High Voltage Flash/

SRAM 2.2 VCC

+0.2 V

VOL Output Low Voltage Flash/

SRAM –0.10 0.10 V F-VCC/S-VCC =V

CC Min

IOL =100 µA

VOH Output High Voltage Flash/

SRAM VCC –

0.1 V

F-VCC/S-VCC =V

CC Min

IOH =–100 µA

VPPLK F-VPP Lock-Out Voltage Flash 1 1.0 V Complete Write Protection

VPP1 F-VPP during Program / Erase Flash 1 1.65 3.3 V

VPP2 Operations 1,2 11.4 12.6

VLKO VCC Prog/Erase Lock Voltage Flash 1.5 V

VIL Input Low Voltage Flash/

SRAM –0.2 0.6 V

VIH Input High Voltage Flash/

SRAM 2.2 VCC

+0.2 V

Figure 4. Input/Output Reference Waveform

INPUT OUTPUT

TEST POINTS

VCC

0.0

VCC

2VCC

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

22 Preliminary

0666_05

NOTE: CL includes jig capacitance.

Figure 5. Test Configuration

Device

Under Test Out

CCQ

Flash Test Configuration Component Values Table

Test Configur a tion CL (pF) R1 (Ω)R

2 (Ω)

2.7 V–3.3 V Standard Test 50 25K 25K

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 23

4.5 Flash AC Characteristics—Read Operations

NOTES:

1. F -OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV

2. . Sampled, but not 100% tested.

See Figure 6, “AC Waveform: Flash Read Operations” on page 24.

See Figure 4, “Input/Output Reference Waveform” on page 21 for timing measurements and maximum

allowable input slew rate.

Table 12. Flash AC Characteristics—Read Operations

# Sym Parameter

Density 16 Mb it 32 Mbit

Unit

Product -90 -110 -100 -110

Voltage Range 2.7 V – 3.3 V

Note Min Max Min Max Min Max Min Max

R1 tAVAV Read Cycle Time 90 110 100 110 ns

R2 tAVQV Address to Output Delay 90 110 100 110 ns

R3 tELQV F-CE# to Output Delay 1 90 110 100 11 0 ns

R4 tGLQV F-OE# to Output Delay 1 30 30 30 30 ns

R5 tPHQV F-RP# to Output Delay 150 150 150 150 ns

R6 tELQX F-CE# to Output in Low Z 2 0 0 0 0 ns

R7 tGLQX F-OE# to Output in Low Z 2 0 0 0 0 ns

R8 tEHQZ F-CE# to Output in High Z 2 25 25 25 25 ns

R9 tGHQZ F-OE# to Output in High Z 2 20 20 20 20 ns

R10 tOH Output Hold from Address, F-CE#,

or F-OE# Change, Whichever

Occurs First 20 0 0 0 ns

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

24 Preliminary

Figure 6. AC Waveform: Flash Read Operations

Address Stable

Device and

Address Selection

ADDRESSES (A)

CE# (E)

OE# (G)

WE# (W)

DATA (D/Q)

RP#(P)

VHigh Z Valid Output

Data

Valid Standby

High Z

R10

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 25

4.6 Flash AC Characteristics—Write Operations

NOTES:

1. Write pulse width (tWP) is defined from F-CE# or F-WE# going low (whichever goes low last) to F-CE# or

F-WE# going high (whichever goes high first). Hence, tWP=t

WLWH =t

ELEH =t

WLEH=t

ELWH. Similarly, write

pulse width high (tWPH) is defined from F-CE# or F-WE# going high (whichever goes high first) to F-CE# or

F-WE# going low (whichever goes low first). Hence, tWPH =t

WHWL=t

EHEL =t

WHEL=t

EHWL.

2. Ref er to Table 5, “Flash Memory Command Definitions” on page 11 for valid AIN or DIN.

3. Sampled, but not 100% tested.

See Figure 4, “Input/Output Reference Waveform” on page 21 for timing measurements and maximum

allowable input slew rate.

See Fi gure 7, “AC Wavef orm: Flash Program and Erase Operati ons” on page 27.

Table 13. Flash AC Characteristics—Write Operations

# Sym Parameter

Density 16 Mbit 32 Mbit

Unit

Product -90 -110 -100 -110

Voltage Range 2.7 V – 3.3 V

Note Min Max Min Max

W1 tPHWL /

tPHEL F-RP# High Recovery to F-WE# (F-CE#) Going Low 150 150 150 150 ns

W2 tELWL

tWLEL F-CE# (F-WE#) Setup to F-WE# (F-CE#) Going Low 0 0 0 0 ns

W3 tELEH

tWLWH F-WE# (F-CE#) Pulse Width 1 60 70 70 70 ns

W4 tDVWH

tDVEH Data Setup to F-WE# (F-CE#) Going High 2 50 60 60 60 ns

W5 tAVWH

tAVEH Address Setup to F-WE# (F-CE#) Going High 2 60 70 70 70 ns

W6 tWHEH

tEHWH F-CE# (F-WE#) Hold Time from F-WE# (F- CE#) High 0 0 0 0 ns

W7 tWHDX

tEHDX Data Hold Time from F-WE# (F-CE#) High 2 0 0 0 0 ns

W8 tWHAX

tEHAX Address Hold Time from F-WE# (F-CE#) High 2 0 0 0 0 ns

W9 tWHWL

tEHEL F-WE# (F-CE#) Pulse Width High 1 30 30 30 30 ns

W10 tVPWH

tVPEH F-VPP Setup to F-WE# (F-CE#) Going High 3 200 200 200 200 ns

W11 tQVVL F-VPP Hold from Valid SRD 3 0 0 0 0 ns

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

26 Preliminary

4.7 Flash Erase and Program T imings(1)

NOTES:

1. Typical values measured at TA= +25 °C and nominal voltages.

2. E xc ludes external system -level overhead.

3. S ampled, but not 100% tested.

Table 14. Flash Erase and Program Timings

Symbol Parameter F-VPP 1.65 V– 3.3 V 11.4 V– 12.6 V Unit

Note Typ(1) Max Typ(1) Max

tBWPB 4 -KW Param eter Block Program Time (Word) 2, 3 0 .1 0 0.30 0.03 0.12 s

tBWMB 3 2 -KW Main Block Program Time (Word) 2, 3 0.8 2.4 0.24 1 s

tWHQV1 / tEHQV1 Word Program Time 2, 3 22 200 8 185 µs

tWHQV2 / tEHQV2 4-KW Parameter Block Erase Time (Word) 2, 3 0.5 4 0.4 4 s

tWHQV3 / tEHQV3 32-KW Main Block Erase Time (Word) 2, 3 1 5 0.6 5 s

tWHRH1 / tEHRH1 Program Suspend Latency 3 5 10 5 10 µs

tWHRH2 / tEHRH2 Erase Suspend Latency 3 5 20 5 20 µs

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 27

NOTES:

1. F-CE# must be toggled low when reading Status Register Data. F-WE# must be inactive (high) when reading

Status Register Data.

A. F-VCC Power-Up and Standby.

B. Write Program or Erase Setup Command.

C. Write Valid Address and Data (for Program) or Erase Confirm Command.

D. Au tomated Program or Erase Delay.

E. Read Stat us Register Data (SRD): reflects completed program/erase operation.

F. Write Read Array Command.

Figure 7. AC Waveform: Flash Program and Erase Operations

ADDRESSES [A]

CE#(WE#) [E(W)]

OE# [G]

WE#(CE#) [W(E)]

DATA [D/Q]

RP# [P]

AIN

Valid

SRD

High Z

V [V]

PPH

PPLK

VPPH

WP# IL

AB C D E F

W10 W11

(Note 1)

ADDRESSES [A]

CE#(WE#) [E(W)]

OE# [G]

WE#(CE#) [W(E)]

DATA [D/Q]

RP# [P]

AIN

Valid

SRD

High Z

V [V]

PPH

PPLK

VPPH

WP# IL

AB C D E F

W10 W11

(Note 1)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

28 Preliminary

4.8 Flash Reset Operations

NOTES:

1. See Section 2.1.4, “Flash Reset” on page 7 for a full description of these conditions.

2. If tPLPH is < 100 ns the device may still reset but this is not guaranteed.

3. I f F-RP# is asserted while a block erase or word program operation is not executing, the reset will complete

within 100 ns.

4. S ampled, but not 100% tested.

Figure 8. AC Waveform: Reset Operation

Table 15. Reset Specifications(1)

Symbol Parameter Note F-VCC 2.7 V – 3.3 V Unit

Min Max

tPLPH F-RP# Low to Reset during Read (If F-RP# is tied

to VCC, this specification is not applicable) 2,4 100 ns

tPLRH1 F-RP# Low to Reset during Block Erase 3,4 22 µs

tPLRH2 F-RP# Low to Reset during Program 3,4 12 µs

RP# (P )

PLPH

RP# (P)

PLPH

(A) Reset during Read Mode

Abort

Complete PHQV

tPHWL

tPHEL

PHQV

tPHWL

tPHEL

(B) Reset during Program or Block Erase, <

PLPH

tPLRH

PLRH

RP# (P )

PLPH

Abort

Complete PHQV

tPHWL

tPHEL

PLRH

Deep

Power-

Down

PLPH

tPLRH

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 29

4.9 SRAM AC Characteristics—Read Operations(1)

NOTE:

1. See Figure 9, “AC Waveform: SRAM Read Operations” on page 30.

2. A t any given temperature and voltage condition, tHZ (Max) is less than and tLZ (Max) both for a given device

and from device to device interconnection.

3. Sampled, but not 100% tested.

4. Timings of tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and

are not referenced to output voltage levels.

Table 16. SRAM AC Characteristics—Read Operations(1)

# Sym Parameter

Density 2/4/8 Mbit

UnitVoltage Range 2.7 V– 3.3 V

Note Min Max

R1 tRC Read Cycle Time 70 –ns

R2 tAA Address to Output Delay –70 ns

R3 tCO1, tCO2 S-CS1#, S-CS2 to Output Delay –70 ns

R4 tOE S-OE# to Ou tp u t Delay –35 ns

R5 tBA S-UB#, LB# to Output Delay –70 ns

R6 tLZ1, tLZ2 S-CS1#, S-CS2 to Output in Low Z 2, 3 5 –ns

R7 tOLZ S-OE# to Outpu t in Low Z 3 0 –ns

R8 tHZ1, tHZ2 S-CS1#, S-CS2 to Output in High Z 2,3,4 0 25 ns

R9 tOHZ S -OE# to Output in High Z 3,4 0 25 ns

R10 tOH Output Hold from Address, S-CS1#,

S-CS2, or S-OE# Change, Whichever O ccurs

First 0–ns

R11 tBLZ S-UB#, S-LB# to Output in Low Z 3 0 –ns

R12 tBHZ S-UB#, S-LB# to Output in High Z 3 0 25 ns

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

30 Preliminary

Figure 9. AC Waveform: SRAM Read Operations

High Z

Valid Output

Address Stable

Data Valid

Device

Address Selection

Standby

ADDRESSES (A)

# (E

)

OE# (G)

WE# (W)

DATA (D/Q)

UB#, LB#

High Z

R10

)

R11 R12

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 31

4.10 SRAM AC Characteristics—Write Op erations(1 , 2)

NOTES:

1. See Figure 10, “AC Waveform: SRAM Write Operations” on page 32 .

2. A write occurs during the overlap (tWP) of low S-CS1# and low S-WE#. A write begins when S-CS1# goes low

and S-WE# goes low with asserting S-UB# or S-LB# for single byte operation or simultaneously asserting

S-UB# and S-LB# for double byte operation. A write ends at the earliest transition when S-CS1# goes high

and S-WE# goes high. The tWP is measured from the beginning of write to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWP is measured from S-CS1# going low to end of write.

5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as S-CS1# or

S-WE# going high.

Table 17. SRAM AC Characteristics—Write Op erations(1,2)

# Sym Parameter

Density 2/4/8 Mbit

UnitVolt 2.7 V – 3.3 V

Note Min Max

W1 tWC Write Cycle Time 70 –ns

W2 tAS Address Setup to S-WE# (S-CS1#) and S-UB#,

S-LB# Going Low 30–ns

W3 tWP S-WE# (S-CS1#) Pulse Width 4 55 –ns

W4 tDW Data to Write Time Overlap 30 –ns

W5 tAW Address Setup to S-WE# (S-CS1#) Going High 60 –ns

W6 tCW S-CE# (S-WE #) Set up to S-WE# (S- C S1#) Going

High 60 –ns

W7 tDH Data Hold Time from S-WE# (S-CS1#) High 0 –ns

W8 tWR Write Recovery 5 0 –ns

W9 tBW S-UB#, S-LB# Setup to S-WE# (S-CS1#) Going High 60 –ns

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

32 Preliminary

4.11 SRAM Data Retention Characteristics(1) —Extended

Temperature

NOTES:

1. Typical values at nominal S-VCC, TA= +25 °C.

2. S-CS1# ≥ VCC – 0.2 V, S-CS2 ≥ VCC – 0.2 V (S-CS1# controlled) or S-CS2 ≤ 0.2 V (S-CS2 controlled).

Figure 10. AC W aveform: SRAM Write Operations

Table 18. SRAM Data Retention Characteristics(1)—Extended Temperature

Sym Parameter Note Min Typ Max Unit Test Conditions

VDR S-VCC for Data Retention 2 1.5 –3.3 V CS1# ≥VCC – 0.2 V

IDR Deep Retention Current 2 ––6µA

S-VCC = 1.5 V

CS1# ≥VCC – 0.2 V

tSDR Data Retention Set-up Time 0 ––ns See Data Retention Waveform

tRDR Recovery Time tRC ––ns

High Z

Data In

Address Stable

Device

Address Selection

Standby

ADDRESSES (A)

# (E

)

OE# (G)

WE# (W)

DATA (D/Q)

UB#, LB#

High Z

)

W4 W7

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 33

5.0 Migration Guide Information

Typically, it is important to discuss footprint migration compati bility between a new product and

existing products. In this specific case, the S tacked CSP allows the system designer to remove two

separate memory footprints for individual flash and SRAM and replace them with a single

footprint, thus resulting in an overall reduction in board space required. This implies that a new

pri nted circuit board would b e used to take a dvantage of t his feature.

Since the flash in Stacked-CSP shares the same features as the Advanced+ Boot Block Features,

conversions from the Advanced Boot Bl ock are described in AP-658 D esign ing for Upgrade t o the

Advanced+ Boot Block Flash Memory, order number 292216.

Please contact your local Intel representation for detailed information about specific Flash +

SRAM system migrations.

Figure 11. SRAM Data Retention Waveform

3.0/2.7V

# (E

)

2.2V

)

GND

3.0/2.7V

0.4V

GND

# Controlled

Controlled

Data Retention Modet

SDR

RDR

Data Retention Mode

SDR

RDR

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

34 Preliminary

6.0 Sys tem Design Considera tions

This section contains information that would have been contained in a product design guide in

earlier generations. In an effort to simplify the amount of documentation, relevant system design

considerations have been combined in to this document.

6.1 Background

The Intel Advanced+ Boot Block Stacked chip scale package combines the features of the

Advanced+ Boot Block flash memory architecture with a low-power SRAM to achieve an overall

reduction in system board space. This enables applications to integrate security with simple

software and hardware configurations, while also combining the system SRAM and flash into one

common footp rint. This section di scusses how to tak e full advantage of the 3 Volt Advanced+ Boot

Block Stacked Chip Scale Package.

6.1.1 Flash + SRAM Footprint Integration

The Stacked Chip Scale Package memory solution can be used to replace a subset of the memory

subsystem within a design. Where a previous design may have used two separate footprints for

SRAM and Flash, you can now replace with the industry-standard I-ballout of the Stacked CSP

device. This allows for an overall reduction in board space, which allows the design to integrate

both the flash and the SRAM into one component.

6.1.2 Advanced+ Boot Block Flash Memory Features

Advanced+ Boot Block adds the following new features to Intel Advanced Boot Block

architecture:

•Instant, individual block locking provides software/hardware controlled, independent locking/

unlocking of any block with zero latency to protect code and data.

•A 128-bit Protection Register enables system security implementations.

•Improved 12 V production programming simplifies the system configuration required to

implement 12 V fast programming.

•Common Flash Interface ( CFI) provides c omponent infor mation on the chip to allow s oftware-

independent device upgr ades.

For more information on specific advantages of the Advanced+ Boot Block Flash Memory, please

see AP-658 Designing with the Advanced+ Boot Block Flash Memory Architecture.

6.2 Flash Control Considerations

The flash device is protected against accidental block erasure or programming during power

transitions. Power supply sequencing is not requir ed, s ince the device is indifferent as to which

power supply, F-VPP or F-VCC, powers-up first. Example flash power supply configurations are

shown in Figu re 12, “Example Power Supply Configurations” on pa ge 35.

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 35

6.2.1 F-R P# Connected to System Reset

The use of F-RP # durin g sys tem reset is import ant with aut omated pr ogr am/erase devi ces sin ce the

system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs

without a flash memory reset, proper CPU initialization will not occur because the flash memory

may be providing status information instead of array data. Intel recommends connecting F-RP# to

the system CPU RESET# signal to allow prope r CPU/f lash initialization following system reset.

System designers must guard against spurious writes when F-VCC voltages are above VLKO. Since

both F-WE# and F-CE# must be low fo r a command write, driving either sign al to VIH will inhibit

writes to the device. The CUI architecture provides additional protection since alteration of

memory contents can only occur after successful completion of the two-step command sequences.

The device is also disabled until F-R P# is brou ght to VIH, regardless of the state of its control

inputs.

By holding the device in reset (F-RP# connected to system PowerGood) during power-up/down,

invalid bus conditions during power-up can be masked, providing yet another level of memory

protection.

6.2.2 F-VCC, F-VPP and F-RP# Transition

The CUI latches commands as issued by system software and is not altered by F-VPP or F-CE#

transitions or WSM actio ns. Its default state upon power-up, after exit from reset mode or after

F-VCC transitions above VLKO (Lockout voltage), is read array mode.

After any program or block erase operation is complete (even after F-VPP transitions down to

VPPLK), the CUI must be reset to read array mode via the Read Array command if access to the

flash memory array is desired.

NOTE: 1. A resistor can be used if the F-VCC supply can sink adequate current based on resistor value.

Figure 12. Example Power Supply Configurations

12 V Fast Programming

Absolute Write Protection With V

≤

PPLK

System Supply

12 V Supply

≤

Ω

System Supply

12 V Supply

Low Voltage and 12 V Fast Programming

System Supply

Prot#

(Logic Signal)

System Supply

Low-Voltage Programming

Absolute Write Protection via Logic Signal

(Note 1)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

36 Preliminary

6.3 Noise Reductio n

Stacked- CSP memory’s power switching character istics require careful dev ice decoupling. System

designers should consider three supply current issues for both the flash and SRAM:

1. Standby current levels (ICCS)

2. Read current levels (ICCR)

3. Transient peaks produced by falling and rising edges of F-CE#, S-CS1#, and S-CS2.

T ransient curr ent magnitudes de pend on the device outputs’ capacitive and inductive loading. Two-

line control and proper decoupling capacitor selection will suppress these transient voltage peaks.

Each device should have a capacitors between individual power (F-VCC, F-VCCQ, F-VPP, S-

VCC)and ground (GND) signals. Hig h-frequency, inherently low-inductance capacito rs sh ould be

placed as close as possible to the package leads.

Noise issues within a system can cause devices to operate erratically if it is not adequately filtered.

In order to avoid any noise interaction issues within a system, it is recommended that the design

contain the appropriate number of decoupling capacitors in the system. Noise issues can also be

reduced if leads to the device are kept very short, in order to reduce inductance.

Decoupling capacitors between VCC and VSS reduce voltage spikes by supplying the extra current

needed during switching. Placing these capacitors as close to the device as possible reduces line

inductance. The capacitor s should be low inductance capacitor s; surface mount capacitors typ ically

exhibit lower inductance.

It is highly recommended that systems use a 0.1 µf capacitor for each of the D9, D10, A10 and E4

grid ballout locations (see Figure 1, “68-Ball Stacked Chip Scale Package” on page 2 for ballout).

These capacitors are necessary to avoid undesired conditions created by excess noise. Smaller

capacitors can be used to decouple higher frequencies.

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 37

NOTES:

1. Substrate connections refer to ballout locations shown in Figure 1, “68-Ball Stacked Chip Scale Package” on

page 2.

2. 0.1µf capacitors should be used with D9, D10, A10and E4.

3. S ome SRA M devices do not have a S-VSSQ; in this case, this pad is a S-VSS.

4. S ome SRA M devices do not have a S-VSSQ; in this case, this pad is a VCC.

6.4 Simul taneous Operation

The term simultaneous operation in used to describe the ability to read or write to the SRAM while

also pr ogrammi ng or erasing flash . I n addit ion, F- CE# , S-CS1# and S- CS2 should not be enable d at

the same time. (See Table 2, “3 Volt Advanced+ Stacked-CSP Ball Descriptions” on page 3 for a

summary of reco mmended operating modes.) Simult aneous oper ation of the can be su mmarized by

the following:

•SRAM read/write are during a Flash Program or Erase Operation are allowed.

•Simultaneous Bus Operations between the Flash and SRAM are not allowed (because of bus

contention).

Figure 13. Typical Flash + SRAM Substrate Power and Ground Connections

S-V

SSQ

D10

SRAM DIE

FLASH DIE

SUBSTRATE

S-X

F-X

Substrate connection to package ball

SRAM die bond pad connection

Flash die bond pad connection

S-V

CCQ

S-V

F-V

SSQ

F-V

CCQ

F-V

A10

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

38 Preliminary

6.4.1 SRAM Operation during Flash “Busy”

This functionality prov ides the ability to use both the flash and the SRAM “at the same time”

within a system, similar to the operation of two devices with separate footprints. This operation can

be achieved by following the appro priate timing constraints within a syst em.

6.4.2 Simultaneous Bus Operations

Operations that requ ire both the SRAM and Flash to be in active mode ar e disallowe d. An example

of these cases would include simultaneous reads on both the flash and SRAM, which would result

in contention for the data bus. Finally, a read of one device while attempting to write to the other

(similar to the conditions of direct memory access (DMA) operation) are also not within the

recommended operating conditions. Basically, only one memory can drive the outputs out the

device at one given point in time.

6.5 Printed Circuit Board Notes

The Intel Stacked CSP will save significant space on your PCB by combining two chips into one

BGA style package. Intel Stacked CSP has a 0.8 mm pitch that can be routed on your Printed

Circuit Board with conventional design rules. T race widths of 0.127 mm (0.005 inches) are typical.

Unused balls in the center of the package are not populated to further increase the routing options.

Standard surface mount process and equipment can be used for the Intel Stacked CSP.

NOTE: Top View

6.6 System Design Notes Summary

The Advanced+ Boot Block Stacked CSP allows higher levels of memory component integration.

Different power supply configurations can be used within the system to achieve different

objectives. At least three differ ent 0.1 µf capacitors shou ld be used to decouple the devices within a

system. SRAM reads or writes during a flash program or erase are supported operations. Standard

printed circuit board technology can be used.

Figure 14. Standard PCB Design Rules Can be Used with St acked CSP Device

Land Pad Diameter: 0.35 mm (0.0138 in)

Solder Mask Opening: 0.50 mm (0.0198 in)

Tr ac e Width: 0. 127 m m (0. 005 in)

Trace Spaces: 0.160 mm (0.00625 in)

Via Capture Pad: 0.51 mm (0.020 in)

Via Drill Size: 0.25 mm (0.010 in)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 39

7.0 Ordering Information

8.0 Additional Information

NOTES:

1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International

customers should contact their local Intel or distribution sales office.

2. Visit In tel’s World Wide Web home page at http://www.Intel.com or http://developer.intel.com for technical

documentation and tools.

Order Number Document/Tool

292216 AP-658 Designing for Upgrade to the Advanced+ Boot Block Flash Memory

292215 AP-657 Designing with the Advanced+ Boot Block Flash Memory Architec ture

Contact Your Intel

Representative Flash Data Integrator (FDI) Software Developer’s Kit

297874 FDI Interactive: Play with Intel’s Flash Data Integrator on Your PC

R D 2 8 F 1 6 0 C 3 T 9 0

Package

RD = 8x12 Ball Matrix CSP

Product line designator

for all Intel

Flash products

Access Speed (ns)

16 Mbit = 90, 110

32 Mbit = 110

Product Family

C3 = 3 V Advanced+ Boot Block

= 2.7 V - 3.6 V

= 1.65 V - 3.6 V or

11.4 V - 12.6 V

Flash Device Density

320 = x16 (32 Mbit)

160 = x16 (16 Mbit)

T =

Top Blocking

B =

Bottom Blocking

SRAM Device Density

8 = x16 (8 Mbit)

4 = x16 (4 Mbit)

2 = x16 (2 Mbit)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

40 Preliminary

Appendix A Program/Erase Flowcharts

Figure 15. Automated Word Programming Flowchart

Start

Write 40H

Program Address/Data

Read Status Register

SR.7 = 1?

Full Status

Check if Desired

Program Complete

Read Status Register

Data (See Above)

Range Error

Programming Error

Attempted Program to

Locked Block - Aborted

Program Successful

SR.3 =

SR.4 =

SR.1 =

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program or after a sequence of

program operations.

Write FFH after the last program operation to reset device to read array mode.

Bus Operation

Standby

SR.3 MUST be cleared, if set during a program attempt, before further

attempts are allowed by the Write State Machine.

SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,

in cases where multiple bytes are programmed before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

Yes

Command

Program Setup

Program

Comments

Data = 40H

Data = Data to Program

Addr = Location to Program

Check SR.7

1 = WSM Ready

0 = WSM Busy

Command Comments

Check SR.3

1 = V

Low Detect

Check SR.1

1 = Attempted Program to

Locked Block - Program

Aborted

Read Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.4

1 = V

Program Error

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 41

0645_13

Figure 16. Program Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Comments

Data = B0H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.2 =

Write FFH

Read Arr ay Data

Program Completed

Done

Reading

Yes

Write FFHWrite D0H

Program Resumed Read Array Data

Read array data from block

other than th e one being

programmed.

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Check SR .7

1 = WS M Ready

0 = WS M Busy

Check SR .2

1 = Pro gram Sus pended

0 = Program Completed

Data = D0H

Addr = X

Bus

Operation Command

Write 70H

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Write

Read

Standby

Write

Data = 70H

Addr = X

Command

Program

Suspend

Read Status

Read Ar ray

Program

Resume

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

42 Preliminary

0645_14

Figure 17. Automated Block Erase Flowchart

Start

Write 20H

Write D0H and

Block Address

Read Status Register

SR.7 =

Full Status

Check if Desired

Block Erase Complete

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent block erasures.

Full Status Check can be done after each block erase or after a sequence of

block erasures.

Write FFH after the last write operation to reset device to read array mode.

Bus Operation

Standby

SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further

attempts are allowed by the Write State Machine.

SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases

where multiple bytes are erased before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

No Yes

Suspend Erase

Suspend

Erase Loop

Standby

Command

Erase Setup

Erase Confirm

Comments

Data = 20H

Addr = Within Block to Be

Erased

Data = D0H

Addr = Within Block to Be

Erased

Check SR.7

1 = WSM Ready

0 = WSM Busy

Command Comments

Check SR.3

1 = V

Low Detect

Check SR.4,5

Both 1 = Command Sequence

Error

Read Status Register

Data (See Above)

Range Error

Command Sequence

Error

Block Erase

Successful

SR.3 =

SR.4,5 =

Block Erase ErrorSR.5 = 1

Attempted Erase of

Locked Block - Aborted

SR.1 = 1

Read Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.5

1 = Block Erase Error

Standby Check SR.1

1 = Attempted Erase of

Locked Block - Erase Aborted

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 43

0645_15

Figure 18. Erase Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Comments

Data = B0H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.6 =

Write FFH

Read Arr ay Data

Erase Completed

Done

Reading

Yes

Write FFHWrite D0H

Erase Resumed Read Array Data

Read array data from block

other than th e one being

erased.

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Check SR .7

1 = WS M Ready

0 = WS M Busy

Check SR .6

1 = Erase Suspended

0 = Erase Completed

Data = D0H

Addr = X

Bus

Operation

Write

Standby

Write

Read

Standby

Read

Command

Write 70H

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Write

Data = 70H

Addr = X

Command

Erase Suspend

Read Status

Read Ar ray

Erase R es ume

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

44 Preliminary

0645_16

Figure 19. Locking Operations Flowchart

Start

Wri te 6 0H

(Confi gur ation S et up)

Comments

Data = 60H

Addr = X

Wri te 9 0H

(Read Configuration)

Read Block Lock Status

Locking

Change

Confirmed?

Locki ng Change

Complete

Bus

Operation

Write

Command

Write

01H, D0H, or 2FH

Write

Data= 01H (Lock Block)

D0H (Unlock Block)

2FH (Lockdown Block)

Addr=Within block to lock

Command

Config. Setup

Lock, Unlock,

or Lockdown

Data = 90H

Addr = X

Write

(Optional) Read

Configuration

Block Lock Status Data

Addr = Second addr of block

Read

(Optional) Block Lock

Status

Confirm Locking Change on

, DQ

. (See Block Locking

State Table for valid

combinations.)

Standby

(Optional)

Optional

Write FFh

(Read Array)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 45

0645_17

Figure 20. Protection Register Programming Flowchart

Start

Write C0H

(Protection Reg.

Program Setup)

Write Protect. Register

Address/Data

Read Status Register

SR.7 = 1?

Full Status

Check if Desired

Program Complete

Read Status Register

Data (See Above)

Range Error

Protection Register

Programming Error

Attempted Program to

Locked Register -

Aborted

Program Successful

SR.3, SR.4 =

SR.1, SR.4 =

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Protection Program operations can only be addressed within the protection

error.

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program or after a sequence of

program operations.

Write FFH after the last program operation to reset device to read array mode.

Bus Operation

Standby

SR.3 MUST be cleared, if set during a program attempt, before further

attempts are allowed by the Write State Machine.

SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,

in cases of multiple protection register program operations before full status is

checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

Yes

1, 1

0,1

1,1

Command

Protection Program

Setup

Protection Program

Comments

Data = C0H

Data = Data to Program

Addr = Location to Program

Check SR.7

1 = WSM Ready

0 = WSM Busy

Command Comments

SR.1 SR.3 SR.4

0 1 1 V

Low

0 0 1 Prot. Reg.

Prog. Error

1 0 1 Register

Locked:

Aborted

Read Status Register Data Toggle

CE# or OE# to Update Status

Standby

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

46 Preliminary

Appendix B CFI Query Structure

This appendix defines the data structure or “database” returned by the Common Flash Interface

(CFI) Query command. System software should parse this structure to gain critical information

such as block size, density, x8/x16, and electrical specifications. Once this information has been

obtained, the software will know which command sets to use to enable flash writes, block erases,

and otherwise control the flash component. The Query is part of an overall specification for

multiple command set and control interface descriptions called Common Flash Interface, or CFI.

B.1 Quer y Structure Output

The Query “database” allows system software to gain information for controlling the flash

component. This section describ es the device’s CFI-compliant interface that allows the host system

to access Query data.

Query data are always presented on the lowest-order data outputs (DQ0-7) only. The numerical

offset value is the address relative to the maximum bus width supported by the device. On this

family of devices, the Query table device starting add ress is a 10h, which is a word address for x16

devices.

For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in ASCII,

appear on the low byte at word add resses 10h and 1 1h. This CFI-compli ant device output s 00h data

on upper bytes. Thus, the device outputs ASCII “Q” in the low byte (DQ0-7) and 00h in the high

byte (DQ8-15).

At Query addresses containing two or more bytes of information, the least significant data byte is

presented at the lower address, and the most significant data byte is presented at the higher address .

In all of the following tables, addresses and data are represented in hexadecimal notation , so the

“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always

“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is

shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.

Table 19. Summary of Query Structure Output as a Function of Device and Mode

Device Hex Offset Code AS CII Value

Device Address 10: 51 “Q”

11: 52 “R”

12: 59 “Y”

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 47

B.2 Query Structure Overview

The Query command causes the flash component to display the Common Flash Interface (CFI)

Query structure or “database.” The structure sub-sections and address locations are summarized

below.

NOTES:

1. Ref er to the Query Structure Output section and offset 28h for the detailed definition of offset address as a

function of device bus width and mode.

2. B A = The beginning location of a Block Address (e.g., 08000h is the beginning location of block 1 when the

block size is 32 Kword).

3. Offset 15 defines “P” which points to the Primary Intel-specific Extended Query Table.

Table 20. Example of Query Structure Output of x16 and x8 Devices

Word Addressing Byte Addressing

Offset Hex Code Value Offset Hex Code Value

A15–A0D15–D0A7–A0D7–D0

0010h 0051 “Q”10h 51 “Q”

0011h 0052 “R”11h 52 “R”

0012h 0059 “Y”12h 59 “Y”

0013h P_IDLO PrVendor 13h P_IDLO PrVendor

0014h P_IDHI ID # 14h P_IDLO ID #

0015h PLO PrVendor 15h P_IDHI ID #

0016h PHI TblAdr 16h ... ...

0017h A_IDLO AltVendor 17h

0018h A_IDHI ID # 18h

... ... ... ...

Table 21. Query Structure(1)

Offset Sub-Section Name Description

00h Manufacturer Code

01h Device Code

(BA+2)h(2) Block Status Register Block-specific information

04-0Fh Reserved Reserved for vendor-specific information

10h CFI Query Identification String Command set ID and vendor data offset

1Bh Syst em Interf ace Information Device timing & voltage information

27h Device Geometry Definition Flash device layout

P(3) Primar y Intel -Specific Extended

Query Table Vendor-defined additional information specific to the

Primary Vendor Algorithm

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

48 Preliminary

B.3 Block Lock Status Register

The Block St atus Register indicates whether an eras e operation completed successf ully or wheth er

a given block is locked or can be accessed for flash program/erase operations.

Block Erase S tatus (BSR.1) allows system software to determine the success o f the last block eras e

operation. BSR.1 can be used just after power-up to verify that the VCC supply was not

accidentally removed during an erase operation. This bit is only reset by issuing another erase

operation to the block. The Block Status Register is accessed from word address 02h within each

block.

NOTE: 1. BA = The beginning location of a Block Address (i.e., 008000h is the beginning location of block 1 in

word mode.)

B.4 CFI Query Identification String

The Identification String provides verification that the component supports the Common Flash

Interface specification. It also indicates the specification version and supported vendor-specified

command set(s).

Table 22. Block Status Register

Offset Length Description Address Value

(BA+2)h(1) 1 Block Lock S tatus Register BA+2: --00 or --01

BSR.0 Block Lock Status

0 = Unlocked

1 = Locked BA+2: ( bit 0): 0 or 1

BSR.1 Block Lock-Down Status

0 = Not locked down

1 = Locked down BA+2: ( bit 1): 0 or 1

BSR 2–7: Reserved for future use BA+2: (bit 2–7): 0

Table 23. CFI Identification

Offset Length Description Addr. Hex

Code Value

10h 3 Query-unique ASCII string “QRY“10 --51 “Q”

11: --52 “R”

12: --59 “Y”

13h 2 Primary vendor command set and control interface ID code. 13: --03

16-bit ID code for vendor-specified algorithms 14: --00

15h 2 Extended Query Table primary algorithm address 15: --35

16: --00

17h 2 Alternate vendor comm and set and control interface ID code 17: --00

0000h means no second vendor-specified algorithm exists 18: --00

19h 2 Secondary algorithm Extended Q uery Table address. 19: --00

0000h means none exists 1A: --00

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 49

B.5 System Interface Information

Table 24. System Interface Information

Offset Length Description Addr. Hex

Code Value

1Bh 1 VCC logic supply minimum program /erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1B: --27 2 .7 V

1Ch 1 VCC logic supply maximum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1C: --36 3.6 V

1Dh 1 VPP [programming] supply minimum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts 1D: --B4 11.4 V

1Eh 1 VPP [programm ing] supply maxim um program /era se voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts 1E: --C6 12.6 V

1Fh 1 “n” such that typical single word program time-out = 2n µs 1F: --05 32 µs

1Bh 1 VCC logic supply minimum program /erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1B: --27 2 .7 V

1Ch 1 VCC logic supply maximum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1C: --36 3.6 V

1Dh 1 VPP [programming] supply minimum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts 1D: --B4 11.4 V

1Eh 1 VPP [programm ing] supply maxim um program /era se voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts 1E: --C6 12.6 V

1Fh 1 “n” such that typical single word program time-out = 2n µs 1F: --05 32 µs

1Bh 1 VCC logic supply minimum program /erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1B: --27 2 .7 V

1Ch 1 VCC logic supply maximum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts 1C: --36 3.6 V

1Dh 1 VPP [programming] supply minimum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts 1D: --B4 11.4 V

20h 1 “n” such that typical max. buf fer write time-out = 2n µs 20: --00 n/a

21h 1 “n” such that typical block erase time-out = 2n ms 21: --0A 1 s

22h 1 “n” such that typical full chip erase time-out = 2n ms 22: --00 n/a

23h 1 “n” such that maximum word program time-out = 2 n times typical 23: --04 512 µs

24h 1 “n” such that maximum buf fer write time-out = 2n times typ i c a l 24: --00 n/a

25h 1 “n” such that maximum block erase time-out = 2n times typical 25: --03 8 s

26h 1 “n” such that maximum chip erase time-out = 2n times typical 26: --00 NA

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

50 Preliminary

B.6 Device Geometry Definition

Table 25. Device Geometry Definition

Offset Length Description Code

See Table Below

27h 1 “n” such that device size = 2n in number of bytes 27:

28h 2 Flash device interface: x8 async x16 async x8/x16 async 28: --01 x16

28:00,29:00 28:01,29:00 28:02,29:00 29: --00

2Ah 2 “n” such that maxim um numbe r of bytes in write buffer = 2n2A: --00 0

2B: --00

2Ch 1

Number of erase block regions within device:

1. x = 0 means no erase blocking; the device erases in “bulk”

2. x specifies the number of device or partition regions with one or

more contiguous same-size eras e blocks.

3. Symmetrically blocked partitions have one blocking region

4. Partition size = (total blocks) x (individual block size)

2C: --02 2

2Dh 4 Erase Block Region 1 Information 2D:

bits 0–15 = y, y+1 = number of identical-size erase blocks 2E:

bits 16–31 = z, region erase block(s) size are z x 256 bytes 2F:

30:

31h 4 Erase Block Region 2 Information 31:

bits 0–15 = y, y+1 = number of identical-size erase blocks 32:

bits 16–31 = z, region erase block(s) size are z x 256 bytes 33:

34:

Device Geometry Definition

Address 16 Mbit 32 Mbit

–B–T–B–T

27: --15 --15 --16 --16

28: --01 --01 --01 --01

29: --00 --00 --00 --00

2A: --00 --00 --00 --00

2B: --00 --00 --00 --00

2C: --02 --02 --02 --02

2D: --07 --1E --07 --3E

2E: --00 --00 --00 --00

2F: --20 --00 --20 --00

30: --00 --01 --00 --01

31: --1E --07 --3E --07

32: --00 --00 --00 --00

33: --00 --20 --00 --20

34: --01 --00 --01 --00

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 51

B.7 Intel-Specific Extended Query Table

Certain flash features and commands are optional. The Intel-Specific Extended Query table

specifies this and other similar types of information.

Table 26. Primary-Vendor Specific Extended Query

Offset(1)

P = 35h Length Description

(Optional Flash Features and Commands) Addr. Hex

Code Value

(P+0)h 3 Primary extended query table 35: --50 “P”

(P+1)h Unique ASCII string “PRI”36: --52 “R”

(P+2)h 37: --49 “I”

(P+3)h 1 M ajor version number, ASCII 38: --31 “1”

(P+4)h 1 M inor version number, ASCII 39: --30 “0”

(P+5)h 4 O ptional feature and command support (1=yes, 0=no) 3A: --66

(P+6)h bits 9–31 are reserved; undefined bits are “0.” If bit 31 is “1” then

another 31 bit field of optional features follows at the end of the bit-30

field.

3B: --00

(P+7)h 3C: --00

(P+8)h 3D: --00

bit 0 Chip erase supported bit 0 = 0 No

bit 1 Suspend erase supported bit 1 = 1 Yes

bit 2 Suspend program supported bit 2 = 1 Yes

bit 3 Legacy lock/unlock supported bit 3 = 0 No

bit 4 Queued erase supported bit 4 = 0 No

bit 5 Instant individual block locking supported bit 5 = 1 Yes

bit 6 Protection bits supported bit 6 = 1 Yes

bit 7 Page mode read supported bit 7 = 0 No

bit 8 Synchronous read supported bit 8 = 0 No

(P+9)h 1 Supported functions after suspend: read array, status, query

Other supported operations are:

bits 1–7 reserved; undefined bits are “0”3E: --01

bit 0 Program supported after erase suspend bit 0 = 1 Yes

(P+A)h 2 Block status register mask 3F: --03

(P+B)h bits 2–15 are Reserved; undefined bits are “0”40: --00

bit 0 Block Lock-Bit Status register active bit 0 = 1 Yes

bit 1 Block Lock-Down Bit Status active bit 1 = 1 Yes

(P+C)h 1 VCC logic supply highest performance program/erase voltage

bits 0–3 BCD value in 100 mV

bits 4–7 BCD value in volts 41: --33 3.3 V

(P+D)h 1 VPP optimum program/erase supply voltage

bits 0–3 BCD value in 100 mV

bits 4–7 HEX value in volts 42: --C0 12.0 V

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

52 Preliminary

NOTE: 1. The variable P is a pointer which is defined at CFI offset 15h.

Table 27. Protection Register Information

Offset(1)

P = 35h Length Description

(Optional Flash Features and Commands) Addr. Hex

Code Value

(P+E)h 1 Number of Protection register fields in JEDEC ID space.

“00h,” indicates that 256 protection bytes are available 43: --01 01

(P+F)h

Protection Field 1: Protection Description 44: --80 80h

(P+10)h

This field describes user-available One Time Programmable (OTP)

Protection register bytes. Some are pre-programmed with device-

unique serial numbers. Others are user programmable. Bits 0–15 point

to the Protection register Lock byte, the section’s first byte. The

following bytes are factory pre-programmed and user-programmable.

45: --00 00h

(P+11)h

bits 0–7 = Lock/bytes JEDEC-plane physical low address

bits 8–15 = Lock/bytes JEDEC -plane physical high address

bits 16–23 = “n” such that 2n = factory pre- programmed bytes

bits 24–31 = “n” such that 2n = user programm able bytes

46: --03 8 byte

(P+12)h 47: --03 8 byte

(P+13)h Reserved for future use 48:

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 53

Appendix C Word-Wide Memory Map Diagrams

Table 28. 16-Mbit, and 32-Mbit Word-Wide Memory Flash Addressing (Sheet 1 of 2)

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit Size

(KW) 16 Mbit 32 Mbi t

4 FF000-FFFFF 1FF000-1FFFFF 32 1F8000-1FFFFF

4 FE000-FEFFF 1FE000-1FEFFF 32 1F0000-1F7FFF

4 FD000-FDFFF 1FD000-1FDFFF 32 1E8000-1EFFFF

4 FC000-FCFFF 1FC000-1FCFFF 32 1E0000-1E7FFF

4 FB000-FBFFF 1FB000-1FBFFF 32 1D8000-1DFFFF

4 FA000-FAFFF 1FA000-1FAFFF 32 1D0000-1D7FFF

4 F9000-F9FFF 1F9000-1F9FFF 32 1C8000-1CFFFF

4 F8000-F8FFF 1F8000-1F8FFF 32 1C0000-1C7FFF

32 F0000-F7FFF 1F0000-1F7FFF 32 1B8000-1BFFFF

32 E8000-EFFFF 1E8000-1EFFFF 32 1B0000-1B7FFF

32 E0000-E7FFF 1E0000-1E7FFF 32 1A8000-1AFFFF

32 D8000-DFFFF 1D8000-1DFFFF 32 1A0000-1A7FFF

32 D0000-D7FFF 1D0000-1D7FFF 32 198000-19FFFF

32 C8000-CFFFF 1C8000-1CFFFF 32 190000-197FFF

32 C0000-C7FFF 1C0000-1C7FFF 32 188000-18FFFF

32 B8000-BFFFF 1B8000-1BFFFF 32 180000-187FFF

32 B0000-B7FFF 1B0000-1B7FFF 32 178000-17FFFF

32 A8000-AFFFF 1A8000-1AFFFF 32 170000-177FFF

32 A0000-A7FFF 1A0000-1A7FFF 32 168000-16FFFF

32 98000-9FFFF 198000-19FFFF 32 160000-167FFF

32 90000-97FFF 190000-197FFF 32 158000-15FFFF

32 88000-8FFFF 188000-18FFFF 32 150000-157FFF

32 80000-87FFF 180000-187FFF 32 148000-14FFFF

32 78000-7FFFF 178000-17FFFF 32 140000-147FFF

32 70000-77FFF 170000-177FFF 32 138000-13FFFF

32 68000-6FFFF 168000-16FFFF 32 130000-137FFF

32 60000-67FFF 160000-167FFF 32 128000-12FFFF

32 58000-5FFFF 158000-15FFFF 32 120000-127FFF

32 50000-57FFF 150000-157FFF 32 118000-11FFFF

32 48000-4FFFF 148000-14FFFF 32 110000-117FFF

32 40000-47FFF 140000-147FFF 32 108000-10FFFF

32 38000-3FFFF 138000-13FFFF 32 100000-107FFF

32 30000-37FFF 130000-137FFF 32 F8000-FFFFF 0F8000-0FFFFF

32 28000-2FFFF 128000-12FFFF 32 F0000-F7FFF 0F0000-0F7FFF

32 20000-27FFF 120000-127FFF 32 E8000-EFFFF 0E8000-0EFFFF

32 18000-1FFFF 118000-11FFFF 32 E0000-E7FFF 0E0000-0E7FFF

32 10000-17FFF 110000-117FFF 32 D8000-DFFFF 0D8000-0DFFFF

32 08000-0FFFF 108000-10FFFF 32 D0000-D7FFF 0D0000-0D7FFF

32 00000-07FFF 100000-107FFF 32 C8000-CFFFF 0C8000-0CFFFF

32 0F8000-0FFFFF 32 C0000-C7FFF 0C0000-0C7FFF

32 0F0000-0F7FFF 32 B8000-BFFFF 0B8000-0BFFFF

32 0E8000-0EFFFF 32 B0000-B7FFF 0B0000-0B7FFF

32 0E0000-0E7FFF 32 A8000-AFFFF 0A8000-0AFFFF

32 0D8000-0DFFFF 32 A0000-A7FFF 0A0000-0A7FFF

32 0D0000-0D7FFF 32 98000-9FFFF 098000-09FFFF

32 0C8000-0CFFFF 32 90000-97FFF 090000-097FFF

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

54 Preliminary

32 0C0000-0C7FFF 32 88000-8FFFF 088000-08FFFF

32 0B8000-0BFFFF 32 80000-87FFF 080000-087FFF

32 0B0000-0B7FFF 32 78000-7FFFF 78000-7FFFF

32 0A8000-0AFFFF 32 70000-77FFF 70000-77FFF

32 0A0000-0A7FFF 32 68000-6FFFF 68000-6FFFF

32 098000-09FFFF 32 60000-67FFF 60000-67FFF

32 090000-097FFF 32 58000-5FFFF 58000-5FFFF

32 088000-08FFFF 32 50000-57FFF 50000-57FFF

32 080000-087FFF 32 48000-4FFFF 48000-4FFFF

32 078000-07FFFF 32 40000-47FFF 40000-47FFF

32 070000-077FFF 32 38000-3FFFF 38000-3FFFF

32 068000-06FFFF 32 30000-37FFF 30000-37FFF

32 060000-067FFF 32 28000-2FFFF 28000-2FFFF

32 058000-05FFFF 32 20000-27FFF 20000-27FFF

32 050000-057FFF 32 18000-1FFFF 18000-1FFFF

32 048000-04FFFF 32 10000-17FFF 10000-17FFF

32 040000-047FFF 32 08000-0FFFF 08000-0FFFF

32 038000-03FFFF 4 07000-07FFF 07000-07FFF

32 030000-037FFF 4 06000-06FFF 06000-06FFF

32 028000-02FFFF 4 05000-05FFF 05000-05FFF

32 020000-027FFF 4 04000-04FFF 04000-04FFF

32 018000-01FFFF 4 03000-03FFF 03000-03FFF

32 010000-017FFF 4 02000-02FFF 02000-02FFF

32 008000-00FFFF 4 01000-01FFF 01000-01FFF

32 000000-007FFF 4 00000-00FFF 00000-00FFF

Table 28. 16-Mbit, and 32-Mbit Word-Wide Memory Flash Addressing (Sheet 2 of 2)

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 55

Appendix D Device ID Table

NOTE: Other locations within the configuration address space are reserved by Intel for future use.

Table 29. Device ID

Read Configuration Address and Data

Item Address Data

Manufacturer Code x16 00000 0089

Device Code

16 Mbit x 16-T x16 00001 88C2

16 Mbit x 16-B x16 00001 88C3

32 Mbit x 16-T x16 00001 88C4

32 Mbit x 16-B x16 00001 88C5

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

56 Preliminary

Appendix E Protection Register Addressing

NOTE: All address lines not specified in the above table must be 0 when accessing the Protection

Table 30. Protection Register Addressing

Word-Wide Protection Register Addressing

WordUseA7A6A5A4A3A2A1A0

LOCKBoth10000000

0Factory10000001

1Factory10000010

2Factory10000011

3Factory10000100

4User10000101

5User10000110

6User10000111

7User10001000

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 57

Appendix F Mechanical and Shipping Media Details

F.1 Mechanical Specification

NOTE: 68- ball package consists of 8 x 12 solder ball matrix, 8 rows and 12 columns. Each row is identified by

a letter and the column by a number. Each ball location, thus, is designated by row & column

combination.

Figure 21. 68-Ball Stacked-CSP: 12 x 8 Matrix

Top View: Ball Down

123456789101112

A1 INDEX

MARK

Bottom View: Ball up

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

58 Preliminary

Table 31. Packaging Specifications

Millimeters Inches

Sym Min Nom Max Min Nom Max

Package Height A 1.20 1. 30 1. 40 0.047 0.051 0. 055

Standoff A1 0.30 0.35 0.40 0.012 0.014 0.016

Package Body Thickn ess A2 0.92 0.97 1.02 0.036 0.038 0.040

Ball Lead Diameter b 0.325 0.40 0.475 0.013 0.016 0.019

Package Body Length – 16 Mbit/2 Mbit D 9.90 10.00 10.10 0.429 0.433 0. 437

Package Body Width – 16Mbit/2Mbit E 7.90 8. 00 8.10 0.311 0.315 0.319

Package Body Length –

32 Mbit/4 Mbit, 16 Mbit/4 Mbit D 11.90 12.00 12.10 0.469 0.472 0.476

Package Body Length –

32 Mbit/8 Mbit D 13.90 14.00 14.10 0.547 0.551 0.555

Package Body Width –

32 Mbit/4 Mbit, 32 Mbit/8 Mbit, 16 Mbit/4 Mbit E 7.90 8.00 8.10 0.311 0.315 0.319

Pitch e 0.80 0.031

Seating Plane Coplanarity Y 0. 1 0.004

Corner to First Bump Distance – 16-Mbit/2-Mbit S1 1.10 1.20 1.30 0.0433 0.0472 0.0512

Corner to First Bump Distance – 16-Mbit/2-Mbit S2 0.50 0.60 0.70 0.0197 0.0236 0.0276

Corner to First Bump Distance –

32-Mbit/4-Mbit, 16-Mbit/4-Mbit S1 1.10 1.20 1.30 0.0433 0.0472 0.0512

Corner to First Bump Distance –

32-Mbit/8-Mbit S1 2.50 2.60 2.70 0.098 0.102 0.106

Corner to First Bump Distance –

32-Mbit/4-Mbit, 16-Mbit/4-Mbit S2 1.50 1.60 1.70 0.0591 0.0630 0.0669

Corner to First Bump Distance –

32-Mbit/8-Mbit S2 1.10 1.20 1.30 0.0433 0.0472 0.0512

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary 59

F.2 Media Information

NOTE: Drawing is not to scale and is only designed to show orientation of devices.

Figure 22. Stacked CSP Device in Tray Orient ation (8 mm x 10 mm and 8 mm x 12 mm

Device Pin 1

Tray Chamfer

Figure 23. Stacked CSP Device in 24 mm Tape (8 mm x 10 mm and 8 mm x 12 mm)

Device Pin 1