Vishay Siliconix
Si4982DY
Document Number: 70748
S09-0870-Rev. C, 18-May-09
www.vishay.com
1
Dual N-Channel 100-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A)
100 0.150 at VGS = 10 V 2.6
0.180 at VGS = 6 V 2.4
SO-8
S1D1
G1D1
S2D2
G2D2
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free)
Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C)aTA = 25 °C ID
2.6
A
TA = 70 °C 2.1
Pulsed Drain Current IDM 20
Continuous Source Current (Diode Conduction)aIS1.7
Maximum Power DissipationaTA = 25 °C PD
2.0 W
TA = 70 °C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-AmbientaRthJA 62.5 °C/W
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Document Number: 70748
S09-0870-Rev. C, 18-May-09
Vishay Siliconix
Si4982DY
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.aMax. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V 1µA
VDS = 100 V, VGS = 0 V, TJ = 55 °C 20
On-State Drain CurrentbID(on) V
DS = 5 V, VGS = 10 V 15 A
Drain-Source On-State ResistancebRDS(on)
VGS = 10 V, ID = 2.6 A 0.130 0.150 Ω
VGS = 6 V, ID = 2.4 A 0.140 0.180
Forward Transconductancebgfs VDS = 15 V, ID = 2.6 A 11 S
Diode Forward VoltagebVSD IS = 1.7 A, VGS = 0 V 1.2 V
Dynamica
Gate Charge Qg
VDS = 50 V, VGS = 10 V, ID = 2.6 A
15 30
nCGate-Source Charge Qgs 2.7
Gate-Drain Charge Qgd 4.0
Gate Resistance Rg 14.4Ω
Tur n - O n D e l ay Time td(on)
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
10 20
ns
Rise Time tr10 20
Turn-Off Delay Time td(off) 30 60
Fall Time tf10 20
Source-Drain Reverse Recovery Time trr IF = 1.7 A, dI/dt = 100 A/µs 60 90
Document Number: 70748
S09-0870-Rev. C, 18-May-09
www.vishay.com
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Vishay Siliconix
Si4982DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
4
8
12
16
20
01234
VDS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
VGS = 10 V thru 6 V
5 V
4 V
3 V
0.00
0.05
0.10
0.15
0.20
0.25
048121620
- On-Resistance (Ω)
R
DS(on)
ID
- Drain Current (A)
VGS = 10 V
VGS = 6 V
0
4
8
12
16
20
0 7 14 21 28
- Gate-to-Source Voltage (V)
Qg
- Total Gate Charge (nC)
V
GS
VDS = 50 V
ID = 2.6 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0123456
VGS
- Gate-to-Source Voltage (V)
- Drain Current (A)ID
TC = 125 °C
- 55 °C
25 °C
0
300
600
900
1200
0 20406080100
VDS
- Drain-to-Source Voltage
C - Capacitance (pF)
Coss
Ciss
Crss
0.0
0.5
1.0
1.5
2.0
2.5
- 50 - 25 0 25 50 75 100 125 150
VGS = 10 V
ID = 2.6 A
TJ - Junction Temperature (°C)
(Normalized)
- On-ResistanceRDS(on)
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Document Number: 70748
S09-0870-Rev. C, 18-May-09
Vishay Siliconix
Si4982DY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70748.
Source-Drain Diode Forward Voltage
Threshold Voltage
VSD
- Source-to-Drain Voltage (V)
- Source Current (A)IS
TJ = 150 °C
TJ = 25 °C
20
10
1
0 0.2 0.4 1.0 1.2
0.6 0.8
- 1.2
- 0.9
- 0.6
- 0.3
0.0
0.3
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Temperature (°C)
ID = 250 µA
Variance (V)VGS(th)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0246810
-RDS(on)
VGS
- Gate-to-Source Voltage (V)
ID = 2.6 A
0
10
20
30
40
50
0.01 0.10 1.00 10.00
Time (s)
Power (W)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
2
1
0.1
0.01
10-4 10-3 10-2 10-1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 62.5 °C/W
3. TJM - T
A = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10130
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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