Si4982DY Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A) 0.150 at VGS = 10 V 2.6 0.180 at VGS = 6 V 2.4 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs * Compliant to RoHS Directive 2002/95/EC D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S Ordering Information: Si4982DY-T1-E3 (Lead (Pb)-free) Si4982DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 C Maximum Power Dissipationa TA = 70 C Operating Junction and Storage Temperature Range ID V 2.6 2.1 IDM 20 IS 1.7 PD Unit 2.0 1.3 A W TJ, Tstg - 55 to 150 Symbol Limit Unit RthJA 62.5 C/W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 70748 S09-0870-Rev. C, 18-May-09 www.vishay.com 1 Si4982DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Typ.a Symbol Test Conditions Min. Max. VGS(th) VDS = VGS, ID = 250 A 2 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 C 20 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltage b VDS = 5 V, VGS = 10 V V 15 A A VGS = 10 V, ID = 2.6 A 0.130 0.150 VGS = 6 V, ID = 2.4 A 0.140 0.180 gfs VDS = 15 V, ID = 2.6 A 11 VSD IS = 1.7 A, VGS = 0 V RDS(on) nA S 1.2 V Dynamica Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time 15 VDS = 50 V, VGS = 10 V, ID = 2.6 A Rg td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 4.0 1 td(on) tr 30 2.7 4.4 10 VDD = 50 V, RL = 50 ID 1 A, VGEN = 10 V, Rg = 6 IF = 1.7 A, dI/dt = 100 A/s 20 10 20 30 60 10 20 60 90 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70748 S09-0870-Rev. C, 18-May-09 Si4982DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 16 VGS = 10 V thru 6 V I D - Drain Current (A) I D - Drain Current (A) 16 12 5V 8 4 8 TC = 125 C 4 25 C 3V 4V - 55 C 0 0 0 1 2 3 0 4 1 2 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 1200 0.20 C - Capacitance (pF) 900 VGS = 6 V 0.15 VGS = 10 V 0.10 Ciss 600 300 Coss 0.05 Crss 0 0.00 0 4 8 12 16 0 20 20 40 60 80 100 VDS - Drain-to-Source Voltage ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2.5 20 VDS = 50 V ID = 2.6 A 16 2.0 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) 0.25 R DS(on) - On-Resistance () 12 12 8 VGS = 10 V ID = 2.6 A 1.5 1.0 0.5 4 0 0 7 14 21 28 0.0 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 70748 S09-0870-Rev. C, 18-May-09 150 www.vishay.com 3 Si4982DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.30 20 0.25 I S - Source Current (A) 10 0.20 ID = 2.6 A 0.15 R DS(on) - TJ = 150 C 0.10 0.05 TJ = 25 C 0.00 1 0.6 0.8 0.2 0.4 1.0 VSD - Source-to-Drain Voltage (V) 0 0 1.2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 50 0.3 40 0.0 ID = 250 A Power (W) V GS(th) Variance (V) 2 - 0.3 30 20 - 0.6 10 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.10 1.00 10.00 Time (s) TJ - Temperature (C) Single Pulse Power Threshold Voltage 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 62.5 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 30 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70748. www.vishay.com 4 Document Number: 70748 S09-0870-Rev. C, 18-May-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1