UNISONIC TECHNOLOGIES CO., LTD
2N4401 NPN SILICON TRANSISTOR
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Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-052.C
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The UTC 2N4401 is designed for use as a medium power
amplifier and switch requiring collector currents up to 500mA.
Lead-free: 2N4401L
Halogen-free:2N4401G
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3 Packing
2N4401-T92-B 2N4401L-T92-B 2N4401G-T92-B TO-92 E B C Tape Box
2N4401-T92-K 2N4401L-T92-K 2N4401G-T92-K TO-92 E B C Bulk
2N4401 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 600 mA
Power Dissipation 625 mW
Derate above 25°C PD 5.0 mW/°C
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
Notes: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC SYMBOL RATING UNIT
Junction to Ambient θJA 200 °C/W
Junction to Case θJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO IC=0.1mA, IE=0 60 V
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0 40 V
Emitter-Base Breakdown Voltage BVEBO IE=0.1mA, IC=0 6 V
Collector Cut-off Current ICEX V
CE=35V, VEB=0.4V µA
Base Cut-off Current IBL V
CE=35V, VEB=0.4V µA
ON CHARACTERISTICS (note)
hFE1 V
CE=1V, IC=0.1mA 20
hFE2 V
CE=1V, IC=1mA 40
hFE3 V
CE=1V, IC=10mA 80
hFE4 V
CE=1V, IC=150mA 100 300
DC Current Gain
hFE5 V
CE=2V, IC=500mA 40
Collector-Emitter Saturation Voltage VCE(SAT1)
VCE(SAT2)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.4
0.75
V
V
Base-Emitter Saturation Voltage VBE(SAT1)
VBE(SAT2)
IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.75 0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS1
Current Gain Bandwidth Product fT V
CE=10V, IC=20mA, f=100MHz 250 MHz
Collector-Base Capacitance Ccb V
CB=5V, IE=0, f=140kHz 6.5 pF
Emitter-Base Capacitance Ceb V
BE=0.5V, IC=0, f=140kHz 30 pF
Input Impedance hie VCE=10V, IC=1mA, f=1kHz 1 15 kΩ
Voltage Feedback Ratio hre VCE=10V, IC=1mA, f=1kHz 0.1 8 ×10-4
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 40 500
Output Admittance hoe VCE=10V, IC=1mA, f=1kHz 1 30 µmhos
SWITCHING CHARACTERISTICS
Delay Time tD VCC=30V, VEB=2V
IC=150mA IB1=15mA 15 ns
Rise Time tR
VCC=30V, VEB=2V
IC=150mA IB1=15mA 20 ns
Storage Time tS 225 ns
Fall Time tF VCC=30V, IC=150mA
IB1= IB2=15mA 30 ns
Note: Pulse test: PulseWidth≤300μs, Duty Cycle≤2%
2N4401 NPN SILICON TRANSISTOR
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TEST CIRCUITS
30V
16V
0
Figure1. Saturated Turn-On Switching Timer
≤220ns 500Ω
200Ω
1KΩ
2N4401 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
0.1 110 100 300
200
0
Collector Current, IC (mA)
Typical Pulsed Current Gain
vs Collector Current
Typical Pulsed Current Gain, hFE
0.1
100
0.3
100110 500
Collector-Emitter Saturation Voltage
vs Collector Current
Collector-Emitter Voltage, VCESAT (V)
0.2
0.3 3 30
300
400
500
VCE =5V
125℃
25℃
-40℃
0.4
Collector Current, IC (mA)
125℃
25℃
-40℃
β=10
Base-Emitter Voltage, VBESAT (V)
Base-Emitter OnVoltage, VBEON (V)
Ambient Temperature, TA(℃)
Collector-Cutoff Current
vs Ambient Temperature
500
0.1
7525 50 100 125 150
100
1
10
VCB=40V
0.1 1 10 100
12
4
Reverse Bias Voltage (V)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
8
16
20 f=1MHz
Cte
Cob
2N4401 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
10 100 1000
160
0
Collector Current, IC (mA)
Turn On and Turn Off Times
vs Collector Current
Time (ns)
80
240
320
400
VCC =25V
toff
ton
IB1=IB2=IC
10
10 100 1000
160
0
Collector Current, IC(mA)
Switching Times
vs Collector Current
Time (ns)
80
240
320
400
VCC =25V
tS
tF
IB1=IB2=IC
10
tR
tD
Power Dissipation, PD(W)
Char.Relative To Voltage at
IC=10mA
Char.Relative To Voltage at TA=25℃
Char.Relative To Voltage at VCE=10V
2N4401 NPN SILICON TRANSISTOR
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
