2SK2789(Q) - TOSHIBA - Product.Network

2SK2789

2009-12-21

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

2SK2789

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

z 4-V gate drive

z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.)

z High forward transfer admittance : |Yfs| = 16 S (typ.)

z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)

z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 100 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 100 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 27 A

Drain current

Pulse (Note 1) IDP 108 A

Drain power dissipation (Tc = 25°C) PD 60 W

Single pulse avalanche energy

(Note 2)

EAS 193 mJ

Avalanche current IAR 27 A

Repetitive avalanche energy (Note 3) EAR 6 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within

the absolute maximum ratings. Please design the appropriate reliability upon

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 2.08 °C / W

Thermal resistance, channel to ambient Rth (ch−a) 83.3 °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 μH, IAR = 27 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-10S1B

Weight: 1.5 g (typ.)

JEDEC ―

JEITA ―

TOSHIBA 2-10S2B

Weight: 1.5 g (typ.)

2SK2789

2009-12-21

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA

Drain cut−off current IDSS VDS = 100 V, VGS = 0 V — — 100 μA

Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 — — V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V

VGS = 4 V, ID = 15 A — 0.09 0.13

Drain−source ON resistance RDS (ON)

VGS = 10 V, ID = 15 A — 0.066 0.085

Ω

Forward transfer admittance |Yfs| VDS = 10 V, ID = 15 A 8 16 — S

Input capacitance Ciss — 1100 —

Reverse transfer capacitance Crss — 180 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 400 —

Rise time tr — 20 —

Turn−on time ton — 30 —

Fall time tf — 50 —

Switching time

Turn−off time toff — 140 —

Total gate charge (gate−source

plus gate−drain) Qg — 50 —

Gate−source charge Qgs — 34 —

Gate−drain (“miller”) Charge Qgd

VDD ≈ 80 V, VGS = 10 V, ID = 27 V

— 16 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR — — — 27 A

Pulse drain reverse current

(Note 1)

IDRP — — — 108 A

Forward voltage (diode) VDSF I

DR = 27 A, VGS = 0 V — — −1.7 V

Reverse recovery time trr — 155 — ns

Reverse recovery charge Qrr

IDR = 27 A, VGS = 0 V, dIDR / dt = 50 A / μs

— 0.31 — μC

Marking

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 4

K2789

Part No. (or abbreviation code)

2SK2789

2009-12-21

2SK2789

2009-12-21

2SK2789

2009-12-21

RG = 25 Ω

DD = 25 V, L = 428 μH ⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅=

DDVDSS

VDSS

AS VB

2SK2789

2009-12-21

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

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design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

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APPLICATIONS.

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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.