FEATURES
DTrenchFETr Power MOSFET
D175_C Junction Temperature
DNew Package with Low Thermal Resistance
DExtremely Low Qgd WFETt Technology for
Low Switching Losses
D100% Rg Tested
APPLICATIONS
DAutomotive
−EPS
−ABS
−Motor Drives
SUM110N04-03P
Vishay Siliconix
New Product
Document Number: 72346
S-32523—Rev. B, 08-Dec-03
www.vishay.com
1
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (W) ID (A)
40 0.0031 @ VGS = 10 V 110 a
D
G
S
N-Channel MOSFET
TO-263
SDG
Top View
Ordering Information: SUM110N04-03P
SUM110N04-03P-E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40
Gate-Source Voltage VGS "20 V
Continuous Drain Current (TJ
=
175
_
C)
TC = 25_C
ID
110a
C
on
ti
nuous
D
ra
i
n
C
urren
t (T
J
=
175_C)
TC = 125_C
I
D110a
A
Pulsed Drain Current IDM 440
A
Avalanche Current
L = 0 1 mH
IAS 70
Single Pulse Avalanche EnergybL = 0.1 mH EAS 211 mJ
Maximum Power Dissipationb
TC = 25_C
PD
375c
W
Maximum Power Dissipation
b
TA = 25_CPD3.75 W
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB MountdRthJA 40
_C/W
Junction-to-Case (Drain) RthJC 0.4
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
SUM110N04-03P
Vishay Siliconix New Product
www.vishay.com
2
Document Number: 72346
S-32523—Rev. B, 08-Dec-03
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 40
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.5 4
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V 100 nA
VDS = 40 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C 50 mA
g
DSS
VDS = 40 V, VGS = 0 V, TJ = 175_C 250
m
On-State Drain CurrentaID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0025 0.0031
Drain-Source On-State ResistancearDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 0.0049 W
DS(on)
VGS = 10 V, ID = 30 A, TJ = 175_C 0.0059
Forward Transconductanceagfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 6500
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
Reverse Transfer Capacitance Crss 570
Total Gate ChargecQg90 150
Gate-Source ChargecQgs VDS = 30 V, VGS = 10 V, ID = 110 A 35 nC
Gate-Drain ChargecQgd
DS ,GS ,D
22
Gate Resistance Rgf = 1 MHz 0.5 1.1 1.9 W
Turn-On Delay Timectd(on) 145 220
Rise TimectrVDD = 30 V, RL = 0.27 W35 55
ns
Turn-Off Delay Timectd(off)
VDD = 30 V
,
RL = 0
.
27 W
ID ^ 110 A, VGEN = 10 V, RG = 2.5 W20 30 ns
Fall Timectf55 85
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current IS110
A
Pulsed Current ISM 240 A
Forward VoltageaVSD IF = 85 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 60 90 ns
Peak Reverse Recovery Current IRM(REC) IF = 85 A, di/dt = 100 A/ms2.5 5 A
Reverse Recovery Charge Qrr 0.075 0.22 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
SUM110N04-03P
Vishay Siliconix
New Product
Document Number: 72346
S-32523—Rev. B, 08-Dec-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
2000
4000
6000
8000
0 8 16 24 32 40
0
4
8
12
16
20
0 20 40 60 80 100 120 140 160
0
40
80
120
160
200
240
0 153045607590
0.000
0.001
0.002
0.003
0.004
0.005
0 20 40 60 80 100 120
0
50
100
150
200
250
01234567
0
50
100
150
200
250
0246810
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V)
− Drain Current (A)ID
− Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
C − Capacitance (pF)
VGS
− Transconductance (S)gfs
25_C
−55_C
6 V
TC = 125_C
VDS = 30 V
ID = 110 A
VGS = 10 thru 7 V
VGS = 10 V
Ciss
Coss
TC = −55_C
25_C
125_C
5 V
− On-Resistance (rDS(on) W)
− Drain Current (A)ID
Crss
ID − Drain Current (A)
SUM110N04-03P
Vishay Siliconix New Product
www.vishay.com
4
Document Number: 72346
S-32523—Rev. B, 08-Dec-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
0.0
0.4
0.8
1.2
1.6
2.0
−50 −25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
TJ − Junction Temperature (_C) VSD − Source-to-Drain Voltage (V)
− Source Current (A)IS
100
10
1
0.3 0.6 0.9 1.2
VGS = 10 V
ID = 30 A
TJ = 25_C
TJ = 150_C
(Normalized)
− On-Resistance (rDS(on) W)
0
44
46
48
50
52
54
56
−50 −25 0 25 50 75 100 125 150 175
TJ − Junction Temperature (_C)tin (Sec)
1000
10
0.00001 0.001 0.1 1
0.1
(a)I Dav
0.01
IAV (A) @ TA = 150_C
(V)V (BR)DSS
ID = 10 mA
100
1
IAV (A) @ TA = 25_C
0.0001
SUM110N04-03P
Vishay Siliconix
New Product
Document Number: 72346
S-32523—Rev. B, 08-Dec-03
www.vishay.com
5
THERMAL RATINGS
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
1000
10
0.1 1 10 100
Limited by rDS(on)
0.1
100
TC = 25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10−410−310−210−1
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
Duty Cycle = 0.5
− Drain Current (A)ID
1 ms
10 ms
100 ms
Single Pulse
0.05
0.02
1
0
50
100
150
200
250
300
0 25 50 75 100 125 150 175
Maximum Avalanche and Drain Current
vs. Case Temperature
TC − Case Temperature (_C)
− Drain Current (A)ID
Limited By Package
10 ms
dc, 100 ms
