FO-55113-B 8 | 6 5 4 3 ? HONEYWELL REV| DOCUMENT CHANGED BY CHECK PART NUMBER A 0039875 JLH |4MAY08 JLH VF652B2-SP POSITIONING OF IC RELATIVE TO RING MAGNET MOUNTING DIMENSIONS 127 ~ ~ | ~ 0,41 7] poe SENSING DISTANCE Aaa _ WAFER LOT CODE | / NI O} U3 DIGIT JUAREZ Hh] [+N FAB DATE YR/WK CODE || -+vF652B | 598 gg) | | 3 ae PART NUMBER_| ne a0 | CLOCKWISE ROTATION fF Ll, ok LI <s you CODE eo os |, 37 4, 80 ______ /i\ _ SCALE 15:1 yy \) SCALE 5:1 P P P |) (0,96+0,09) (0,9340,10) <___ {$$ 4 9 () _______> NOTES: /)\ LOCATION OF CENTER OF BOTH AMR WHEATSTONE BRIDGES. SPACING OF AMR DRIDGE CENTERS IS 0,71 MM IN TARGET ROTATION DIRECTION. 2 - CHARACTERISTICS OF A SUITABLE RING MAGNET TARGET: 3 - MAGNETIC FLUX DENSITY AT POLE CENTER IN RADIAL DIRECTION AT 25 C IS AT LEAST 5.10 MILLITESLA AT 4.70 MM FROM THE RING MAGNET, WITHIN 1.00 MM AXIAL POSITION FROM CENTER. OUTER DIAMETER IS 70. 7MM. RING MAGNET HAS 18 POLE PAIRS. TEMPERATURE COEFFICIENT OF MAGNETIC FLUX DENSITY IS -0.2% / DEGREE C. SENSING DISTANCE = 2.541.0 MM OTHER RING MAGNETS MIGHT BE SUITABLE ALSO BUT REQUIRE EVALUATION BY HONEYWELL. 3 - PART MUST MEET THE REQUIREMENTS OF THE EUROPEAN UNION RoHS DIRECTIVE 2002/95/EC 4 - TERMI MEET PECIFICATI MIL-STD- F METH lA 638. ERMINALS MEET SOLDER SPEC CATIONS L-STD-202 ETHOD 208 OR EIA NESIGN UNTTSD oRAWN Trn MAY 08 TOLERANCES UNLESS NOTED: CHECK ILA | AMAY08 Honeywell om Cn cero i NO PLACES XS Ms g| THIS DRAWING COVERS A PROPRIETARY ITEM oteess 4| ove Pact x : > jsf, AND IS THE PROPERTY OF HONEYWELL. TITLE omen: Mts -ISTTHIS DRAWING IS NOT TO BE COPIED OR USED rESD SENSITIVITY. THREE PLACE = XXX 0,005) WITHOUT THE PERMISSION OF HONEYWELL. SWITCH, SOLID STATE , FOUR PLACE XXXX + 0,0050 CLASS LC ANGLES xX + 3 INTERPRET PER ASME YI4.5M-1994 SIZE] TYPE |DRAWING NAME REV PER MIL-STD-8836G6 THIRD ANGLE PROJECTION OTHER HONEYWELL ENGINEERING D | VF 652B2-SP A Oc] Pro/ENGINEER 3D [SCALE - sieeT. | OOF 3 3 2FO-55113-B 8 | 6 5 v 4 3 2 5V Vs IK SPD OUT O K VF652BI-SP DIR OUT C O GND _ 20PF = 20PF @ FIGURE 1 TEST CIRCUIT ABSOLUTE MAXIMUM RATINGS /A\ CHARACTERISTIC SYMBOL CONDITIONS MIN | MAX | UNIT FUNCTIONAL TEMPERATURE To JAMBIENT, 4.5V < Vs < 24V -40 | 165 | C STORAGE TEMPERATURE Ts JAMBIENT, NO POWER APPLIED | -55 | 165 | C SOLDERING TEMPERATURE 10 SEC MAXIMUM 260 | C te = 10% TO 90% RISE TIME SUPPLY VOLTAGE V5 -0.5] 30 V +f = 90% TO 10% FALL TIME vey OUTPUT VOLTAGE (SPD & DIR) | Vout -0.5] 30 V DUTY CYCLE = (TON / IT) * 100% ; OUTPUT CURRENT (SPD & DIR) lol | HOUR MAXIMUM 0 | mA i i i 2 8 Vs Co oc /H = Voh = 6 4 7 TON OS 5 _ a TPU ELECTRICAL CHARACTERTSTT ICS AT 4.5V < Vs < 24V, -40C < Ta < 150C UNLESS OTHERWISE SPECIFIED - = 3 Ppa TTT Is CHARACTERISTIC SYMBOL CONDITIONS MIN TYP MAX UNIT a. SS 2 A SUPPLY VOLTAGE Vs 4.5 24 V > Vol | uc SUPPLY CURRENT E [4 mA _ _- _ OUTPUT Vsat (SPD & DIR) Vol |Vs=5V, lol=5mA 0.4 V | | TIME OUTPUT HIGH (SPD & DIR) Voh |Vs=5V, RL=IK to 5V 4.99 V ) 4 OUTPUT LEAKAGE (SPD & DIR) loh [Voh=24V 10 uA DUTY CYCLE (SPD) Dey! |SEE FIG. 2, CONSTANT ROTATION 30 50 70 i TIME POWER UP TIME (SPD & DIR) TPU [SEE FIG. 3 300 uS FIGURE 3 FALL TIME (SPD 8& DIR) TF Vs=5V, RL=IK TO 5V, CL=20pF 1.5 uS FIGURE 2 OUTPUT SIGNAL FREQUENCY fop 0 10000 H7 DUTY CYCLE DIAGRAM NOTES /5\. ABSOLUTE MAXIMUM RATINGS ARE THOSE VALUES BEYOND WHICH THE SAFETY OF THE DEVICE CANNOT BE GUARANTEED. THIS IS A STRESS RATING ONLY AND FUNCTIONAL OPERATION OF THE DEVICE AT THESE OR ANY OTHER CONDITIONS ABOVE THOSE INDICATED IN THE OPERATIONAL SECTIONS OF THIS SPECIFICATION IS NOT IMPLIED. EXPOSURE TO ABSOLUTE MAXIMUM RATINGS FOR EXTENDED PERIODS MAY AFFECT RELIABILITY. 6 - OUTPUT (SPEED OUT AND DIR OUT) HAS SHORT CIRCUIT PROTECTION. T - SUPPLY (VS) HAS REVERSE POLARITY PROTECTION. 8 - DEVICE IS ESD CLASS IC PER MIL-STD-8836. PIN # 1, 2, 7, AND 8 ARE THE MOST SENSITIVE FOR ESD. Na CONNECTION cori 5 A/S WET 8 * Edlutcteno"ivEMuh aheSOCERs GAT TL AMOSQMEGED BY (Oke tRECL SAPS obGE 1S [Baie An TESTING IN THE MANUFACTURING PROCESS. ee * Ues po TI ! en 3 OLE rill I 6 lg CO};aS Om] on] | Ww ] mo DIR OUT cr Pe Se ae. BRIDGE Bt 4 J OC seca Ae AUTOMOTIVE THIS DRAWING COVERS A PROPRIETARY Honeywell BRIDGE B- SE GCA NANA Ea Gam REQUIREMENT. JONEYWELL. THIS DRAWING 1. [SLE] TYPE] DRAWING NAME REV SCALE 10:1 ESD SENSITIVITY: ADE HONEYWELL. THIS DRAWING IS CLASS IC NOT TO BE COPIED OR USED WITHOUT D | VF652B2-SP PER MIL-STD-8836 THE PERMISSION OF HONEYWELL. SCALE - SHEET 2c OF 3 8 7 6 5 A d | 3 | ? | |FO-55113-B Oo SIGNAL B DERIVED FROM > AMR #2 BRIDGE SIGNAL A DERIVED FROM DIR AMR #1 BRIDGE OUTPUT -> SET 2 CLR > ONE CLOCK PULSE FOR EACH TRANSITION HI OR LO DELAY LINE NOTES 10 - l2 - 13 - FIGURE 5 DIRECTION LOGIC BLOCK DIAGRAM GENERAL DESCRIPTION OF ELECTRICAL OPERATION: - HONEYWELL S VF652BI-SP DETECTS THE SPEED AND THE DIRECTION OF A ROTATING RING MAGNET WITH ALTERNATING POLES. THE PART IS INTENDED FOR AUTOMOTIVE APPLICATIONS. - REFER TO FIGURE 4 AND 5 FOR A BLOCK DIAGRAM OF THE CIRCUIT. - PERFORMANCE AND SUITABILITY OF A SPECIFIC RING MAGNET TARGET WILL NEED TO BE EVALUATED BY HONEYWELL. IN GENERAL, EACH AMR BRIDGE REQUIRES A ROTATING FIELD IN THE PLANE OF THE IC WITH A MAGNITUDE OF AT LEAST 1.0 MILLI-TESLA TO FUNCTION. - THE IC 1S IMPLEMENTED IN BIPOLAR TECHNOLOGY CONTAINING TWO WHEATSTONE BRIDGES OF THIN FILM ANISOTROPIC MAGNETORESISTOR (AMR) TRANSDUCER ELEMENTS. THE AMR ELEMENTS CHANGE RESISTANCE WITH CHANGING MAGNETIC FIELD. THE TWO AMR WHEATSTONE BRIDGES ARE SPATIALLY SEPARATED TO CREATE A PHASE SHIFT IN THE ELECTRICAL SIGNAL GENERATED BY THE TWO BRIDGES IN THE DIRECTION OF ROTATION. THE TWO AMR BRIDGE CENTERS ARE 0,71 MM APART IN THE DIRECTION OF TARGET ROTATION PAST THE PACKAGE. THESE TWO INTERNAL SIGNALS ARE USED BY THE INTERNAL SIGNAL PROCESSING CIRCUIT TO CREATE THE TWO SENSOR OUTPUTS. - ONE OF THE OUTPUTS IS SPD OUT (SPEED OUTPUT) WHICH PROVIDES ONE PULSE PER RING MAGNET POLE (TWO PULSES PER POLE PAIR). THE OTHER OUTPUT IS DIR OUT (DIRECTION OUTPUT) WHICH OUTPUTS HIGH FOR CLOCKWISE RING MAGNET ROTATION AND LOW FOR COUNTER-CLOCKWISE ROTATION. THE DIR OUT IS UPDATED WITH ANY TRANSITION (FALLING EDGE OR RISING EDGE) OF SPD OUT. - THE DIR OUT IS NOT DEFINED AT POWER UP AND CAN BE EITHER HIGH OR LOW. AFTER START UP, CORRECT AFTER ANY TRANSITION OF SPEED OUT. - THE DEVICE WILL WORK DOWN TO ZERO TARGET SPEED. THERE IS NO MINIMUM TARGET SPEED REQUIREMENT. - THE OUTPUT SIGNALS (SPD OUT AND DIR OUT) ARE OPEN-COLLECTOR OUTPUTS AND NEED A PULL-UP RESISTOR (E.G. | KOHM OR OTHER SUITABLE VALUE) WHICH IS CONNECTED TO THE VS OR SOME OTHER PULL-UP VOLTAGE. WHEN THE OPEN COLLECTOR TRANSISTOR INTERNAL TO THE IC OFF, THEN THE LOGIC AT THE OUTPUT IS HIGH. IF THE TRANSISTOR IS ON, THEN THE LOGIC AT THE OUTPUT IS LOW. - THE DIGITAL SIGNAL A IS DERIVED FROM AMR BRIDGE # |. THE DIGITAL SIGNAL B IS DERIVED FROM AMR BRIDGE # 2. THE SIGNAL A AND SIGNAL B ARE OUT OF PHASE SINCE THE TWO AMR BRIDGES ARE SPATIALLY SEPARATED. THE SIGNAL A DIRECTLY DRIVES THE SPD OUT. BOTH SIGNAL A AND SIGNAL B ARE INPUT TO THE DIRECTION LOGIC WHICH GENERATES DIR OUT. THIS LOGIC CONTAINS A D FLIP-FLOP WITH A DELAY LINE WHERE BOTH SIGNALS ARE COMPARED WITH AN XOR LOGIC GATE. THE XOR LOGIC GENERATES A LOW IF BOTH INPUTS ARE THE SAME, AND GENERATES A HIGH IF THEY ARE DIFFERENT. THE DIR OUT WILL BE MAGNETIC ENVIRONMENT: - THE PRESENCE OF FERROUS MATERIALS SUCH AS NICKEL, IRON, STEEL, AND COBALT NEAR THE SENSOR CAN CREATE DISTURBANCES IN THE MAGNETIC FIELD FROM THE RING MAGNET THAT MIGHT IMPACT THE DEVICE PERFORMANCE. NON-FERROUS MATERIALS SUCH AS COPPER, BRASS, GOLD, ALUMINUM, SOME STAINLESS STEEL, SILVER, TIN SILICON, AND ANY NONMETALLIC MATERIAL WILL NOT DISTORT THE FIELD. ALSO, AT HIGH FREQUENCY THE EDDY CURRENT EFFECT CAN INFLUENCE SENSOR PERFORMANCE. THE SIGNIFICANCE OF THESE EFFECTS IS BEST DETERMINED WITH TESTING IN THE APPLICATION. TAPE AND REEL PACKAGING: - THE 8 PIN SOIC PACKAGE IS SHIPPED TO THE CUSTOMER ON TAPE AND REEL IN THE ORIENTATION SHOWN IN FIGURE 6. THERMAL CONSIDERATIONS: - TEMPERATURE RATING WILL NEED TO BE EVALUATED. IS DEPENDENT ON FINAL METHOD OF PACKAGING AND THERMAL ENVIRONMENT. EACH APPLICATION THERMAL RESISTANCE OF THIS 8 PIN SOIC IS DEPENDENT ON PACKAGING METHOD IN APPLICATION, BAND GAP REGULATOR VS 3.9V GND [ S| GNAL A Bb) p PREAMP CMP VV | \ a SHORT CKT PROTECTED OFFSET TRIN HYSTERESIS | DIRECTION LOGIC PREAMP CMP OFFSET TRIM HYSTERESIS | DRV SPD OUT SIGNAL B SHORT CKT PROTECTED FIGURE 4 ELECTRIC CIRCUIT BLOCK DIAGRAM O ote |ie die He TERE O OO OO 0 0 0 0 0 O FIGURE 6 TAPE AND REEL PACKAGING OC cece: lb AUTOMOTIVE ones om Ap EXCE! TA STATIC FREE WORKSTATION ESD SENSITIVITY: CLASS IC PER MIL-STD-8836 Gam) REQUIREMENT. THIS DRAWING COVERS A PROPRIETARY ITEM AND IS THE PROPERTY OF HONEYWELL. THIS DRAWING IS NOT TO BE COPIED OR USED WITHOUT THE PERMISSION OF HONEYWELL. Honeywell SIZE TYPE DRAWING NAME VF652B2-SP R EV SCALE SHEET 3 OF 3 A | 3 | 2