TZMC Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 1/5
Zener diode
Features
1. Small surface mounting type
2. High reliability
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation RthJA≦300K/W PV 500 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 175 ℃
Storage temperature range Tstg -65~+175 ℃
Maximum Thermal Resistance
Tj=25℃
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mm×50mm×1.6mm RthJA 500 K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.5 V
TZMC Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Type VZnom IZT for V
ZT and rzjT rzjK at I
ZK IR and IR at VR TKVZ
TZMC. V mA V Ω Ω mA µA µA1) V %/K
2V0 2.0 5 1.9~2.1 100 <600 1 <150 <300 1 -0.09~-0.06
2V2 2.2 5 2.09~2.31 100 <600 1 <150 <300 1 -0.09~-0.06
2V4 2.4 5 2.28~2.56 <85 <600 1 <50 <100 1 -0.09~-0.06
2V7 2.7 5 2.5~2.9 <85 <600 1 <10 <50 1 -0.09~-0.06
3V0 3.0 5 2.8~3.2 <85 <600 1 <4 <40 1 -0.08~-0.05
3V3 3.3 5 3.1~3.5 <85 <600 1 <2 <40 1 -0.08~-0.05
3V6 3.6 5 3.4~3.8 <85 <600 1 <2 <40 1 -0.08~-0.05
3V9 3.9 5 3.7~4.1 <85 <600 1 <2 <40 1 -0.08~-0.05
4V3 4.3 5 4.0~4.6 <75 <600 1 <1 <20 1 -0.06~-0.03
4V7 4.7 5 4.4~5.0 <60 <600 1 <0.5 <10 1 -0.05~+0.02
5V1 5.1 5 4.8~5.4 <35 <550 1 <0.1 <2 1 -0.02~+0.02
5V6 5.6 5 5.2~6.0 <25 <450 1 <0.1 <2 1 -0.05~+0.05
6V2 6.2 5 5.8~6.6 <10 <200 1 <0.1 <2 2 0.03~0.06
6V8 6.8 5 6.4~7.2 <8 <150 1 <0.1 <2 3 0.03~0.07
7V5 7.5 5 7.0~7.9 <7 <50 1 <0.1 <2 5 0.03~0.07
8V2 8.2 5 7.7~8.7 <7 <50 1 <0.1 <2 6.2 0.03~0.08
9V1 9.1 5 8.5~9.6 <10 <50 1 <0.1 <2 6.8 0.03~0.09
10 10 5 9.4~10.6 <15 <70 1 <0.1 <2 7.5 0.03~0.1
11 11 5 10.4~11.6 <20 <70 1 <0.1 <2 8.2 0.03~0.11
12 12 5 11.4~12.7 <20 <90 1 <0.1 <2 9.1 0.03~0.11
13 13 5 12.4~14.1 <26 <110 1 <0.1 <2 10 0.03~0.11
15 15 5 13.8~15.6 <30 <110 1 <0.1 <2 11 0.03~0.11
16 16 5 15.3~17.1 <40 <170 1 <0.1 <2 12 0.03~0.11
18 18 5 16.8~19.1 <50 <170 1 <0.1 <2 13 0.03~0.11
20 20 5 18.8~21.2 <55 <220 1 <0.1 <2 15 0.03~0.11
22 22 5 20.8~23.3 <55 <220 1 <0.1 <2 16 0.04~0.12
24 24 5 22.8~25.6 <80 <220 1 <0.1 <2 18 0.04~0.12
27 27 5 25.1~28.9 <80 <220 1 <0.1 <2 20 0.04~0.12
30 30 5 28~32 <80 <220 1 <0.1 <2 22 0.04~0.12
33 33 5 31~35 <80 <220 1 <0.1 <2 24 0.04~0.12
36 36 5 34~38 <80 <220 1 <0.1 <2 27 0.04~0.12
39 39 2.5 37~41 <90 <500 0.5 <0.1 <5 30 0.04~0.12
43 43 2.5 40~46 <90 <600 0.5 <0.1 <5 33 0.04~0.12
47 47 2.5 44~50 <110 <700 0.5 <0.1 <5 36 0.04~0.12
51 51 2.5 48~54 <125 <700 0.5 <0.1 <10 39 0.04~0.12
56 56 2.5 52~60 <135 <1000 0.5 <0.1 <10 43 0.04~0.12
62 62 2.5 58~66 <150 <1000 0.5 <0.1 <10 47 0.04~0.12
68 68 2.5 64~72 <200 <1000 0.5 <0.1 <10 51 0.04~0.12
75 75 2.5 70~79 <250 <1500 0.5 <0.1 <10 56 0.04~0.12
1) at Tj=150℃
TZMC Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
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Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient
Temperature
Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Diode Capacitance vs. Z-voltage
TZMC Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 4/5
Figure 6. Forward Current vs. Forward Voltage Figure 8. Z-Current vs. Z-Voltage
Figure 7. Z-Current vs. Z-Voltage Figure 9. Differential Z-Resistance Vz vs. Z-Voltage
Figure 10. Thermal Response
TZMC Series
Excel Semiconductor
www.excel-semi.com Rev. 3f, 1-Jun-2008
FaxBack +86-512-66607370 5/5
Dimensions in mm
Glass Case
Mini Melf / SOD-80
JEDEC DO-213 AA
Cathode identification
3.5±0.2
0.3
Φ1.5±0.1
