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VN0640
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92 Die†
400V 10Ω0.75A VN0640N3 VN0640ND
† MIL visual screening available
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Order Number / Package
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Features
■■Free from secondary breakdown
■■Low power drive requirement
■■Ease of paralleling
■■Low CISS and fast switching speeds
■■Excellent thermal stability
■■Integral Source-Drain diode
■■High input impedance and high gain
■■Complementary N- and P-channel devices
Applications
■■Motor controls
■■Converters
■■Amplifiers
■■Switches
■■Power supply circuits
■■Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
TO-92
Ordering Information
S G D
7-172
VN0640
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 0.25A 1.5A 1W 125 170 0.25A 1.5A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BVDSS 400
VGS(th) Gate Threshold Voltage 1.0 4.0 V VGS = VDS , ID = 2mA
∆VGS(th) Change in VGS(th) with Temperature -6.0 mV/°CV
GS = VDS , ID = 2mA
IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 µAV
GS = 0V, VDS = Max Rating
1mAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 0.6 VGS = 5V, VDS = 25V
0.75 VGS = 10V, VDS = 25V
RDS(ON) 8.0 VGS = 5V, ID = 100mA
8.0 10 VGS = 10V, ID = 500mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/°CV
GS = 10V, ID = 500mA
GFS Forward Transconductance 100 160 m VDS = 25V, ID = 500mA
CISS Input Capacitance 105 130
COSS Common Source Output Capacitance 25 75 pF
CRSS Reverse Transfer Capacitance 10 20
td(ON) Turn-ON Delay Time 10
trRise Time 10
td(OFF) Turn-OFF Delay Time 20
tfFall Time 10
VSD Diode Forward Voltage Drop 1.8 V VGS = 0V, ISD = 0.5A
trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
VV
GS = 0V, ID = 2mA
VGS = 0V, VDS = 25V
f = 1 MHz
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VDD = 25V,
ID = 0.5A,
RGEN = 25Ω
ns
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
VDD
Rgen
0V
0V
Ω
Ω
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VN0640
Typical Performance Curves
Output Characteristics
1.25
1.0
0.75
0.5
0.25
0102030 5040
VDS (volts)
ID (amperes)
Saturation Characteristics
0.75
0.6
0.45
0.3
0.15
VDS (volts)
ID (amperes)
Maximum Rated Safe Operating Area
0.1
1.0
10
0.01
VDS (volts)
ID (amperes)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp (seconds)
Transconductance vs. Drain Current
0.40
0.32
0.24
0.16
0.08
GFS (siemens)
ID (amperes)
Power Dissipation vs. Case Temperature
0 15010050 1257525 TC (°C)
PD (watts)
TC = 25°C
100101 1000
0.8
0.6
0.4
0.2
0
VDS = 25V
TA = -55°C
TA = 25°C
TA = 150°C
TO-92
50
40
30
20
10
0246 108
VGS = 10V
8V
6V
4V
3V
8V
4V
3V
00
00
0
1.0
6V
5V
TO-92 (DC)
VGS = 10V
TO-92
PD = 1W
TC = 25°C
7-174
VN0640
Typical Performance Curves
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS (volts)
Tj(°C)
VGS(th) (normalized)
DS(ON)
R (normalized)
VDS(th) and R Variation with Temperature
On-Resistance vs. Drain Current
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
C (picofarads)
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
0 10203040
150
100
50
0246810
2.5
2.0
1.5
1.0
0.5
-50 0 50 100 150
1.1
1.0
0.9
20
8
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0 0.5 1.0 1.5 2.0 2.5
-50 0 50 100 150
100 pF
VDS = 40V
VDS = 10V
180 pF
RDS @ 10V, 0.5A
VGS = 5V
TA = -55°C
VDS = 25V
f = 1MHz
CISS
COSS
CRSS
25°C
150°C
0 0.4 0.8 1.2 2.01.6
4
12
16
V(th) @ 2mA
0
0
200
0
0
VGS = 10V
2.5
2.0
1.5
1.0
0.5
0
