© 2007 IXYS All rights reserved 1 - 4
VUM 24-05N
20070605c
IXYS reserves the right to change limits, test conditions and dimensions
ID25 =35A
VDSS = 500 V
RDS(on) = 0.12 ΩΩ
ΩΩ
Ω
Module for Power Factor Correction
Features
•Package with DCB ceramic base plate
•Soldering connections for PCB
mounting
•Isolation voltage 3600 V~
•Low RDS(on) HDMOSTM process
•Low package inductance for high
speed switching
•Ultrafast boost diode
•Kelvin source for easy drive
Applications
•Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
•Boost topology for SMPS including
1~ rectifier bridge
•Power supply for welding equipment
Advantages
•3 functions in one package
•Output power up to 5 kW
•No external isolation
•Easy to mount with two screws
•Suitable for wave soldering
•High temperature and power cycling
capability
•Fits easiliy to all available PFC
controller ICs
VRRM (Diode) VDSS Type
VV
600 500 VUM 24-05N
Power MOSFET Stage
for Boost Converters
513278 46
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 500 V
VDGR TVJ = 25°C to 150°C; RGS = 10 kΩ500 V
VGS Continuous ±20 V
IDTS= 85°C 24 A
IDTS= 25°C 35 A
IDM TS= 25°C, tp = ①95 A
PDTS= 85°C 170 W
ISVGS = 0 V, TS = 25°C 24 A
ISM VGS = 0 V, TS = 25°C, tp = ①95 A
VRRM 600 V
IdAV TS= 85°C, rectangular δ = 0.5 40 A
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ = 150°C, t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
PTS= 85°C 36 W
VRRM 800 V
IdAV TS= 85°C, sinus 180° 40 A
IFSM TVJ = 45°C, t = 10 ms (50 Hz) 300 A
t = 8.3 ms (60 Hz) 320 A
TVJ = 150°C, t = 10 ms (50 Hz) 260 A
t = 8.3 ms (60 Hz) 280 A
PTS= 85°C 33 W
TVJ -40...+150 °C
TJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5/18-22 Nm/lb.in.
Weight 28 g
MOSFET
Boost Diode
Module Rectifier Diodes
① Pulse width limited by TVJ
57
68
3
24
1
© 2007 IXYS All rights reserved 2 - 4
VUM 24-05N
20070605c
IXYS reserves the right to change limits, test conditions and dimensions
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 2 mA 500 V
VGS(th) VDS = 20 V, ID = 20 mA 2 5 V
IGSS VGS = ±20 V, VDS = 0 V ±500 nA
IDSS VDS = 500 V, VGS = 0 V 2 mA
RDS(on) TVJ = 25°C 0.12 Ω
RGint TVJ = 25°C 1.5 Ω
gfs VDS = 15 V, IDS = 12 A 30 S
VDS IDS = 24 A, VGS = 0 V 1.5 V
td(on) 100 ns
td(off) 220 ns
Ciss 8.5 nF
Coss 0.9 nF
Crss 0.3 nF
QgVDS = 250 V, ID = 12 A, VGS = 10 V 350 nC
RthJH with heat transfer paste 0.38 K/W
VFIF= 22 A; TVJ = 25°C 1.65 V
TVJ =150°C 1.4 V
IRVR= 600 V, TVJ = 25°C 1.5 mA
VR= 480 V, TVJ = 25°C 0.25 mA
TVJ =125°C 7 mA
VT0 For power-loss calculations only 1.14 V
rTTVJ = 125°C 10 mΩ
IRM IF= 30 A; -diF/dt = 240 A/μs
VR= 350 V, TVJ = 100°C 10 11 A
RthJH with heat transfer paste 1.8 K/W
VFIF= 20 A, TVJ = 25°C 1.4 V
TVJ =125°C 1.4 V
IRVR= 800 V TVJ = 25°C 0.25 mA
VR= 640 V, TVJ =125°C 2 mA
VT0 For power-loss calculations only 1.05 V
rTTVJ = 125°C 16 mΩ
RthJH with heat transfer paste 2 K/W
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 Ω, L-load
VDS = 25 V, f = 1 MHz, VGS = 0 V
Rectifier Diodes Boost Diode MOSFET
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
Fig. 2 I2t for fusing (Rectifier Diodes)
Dimensions in mm (1 mm = 0.0394")
t
I2t
A2s
A
IFSM
0.001 0.01 0.1 1
0
50
100
150
200
250
300
350
110
0
100
200
300
400
500
s
ms
t
VR= 0.8VRRM
TVJ= 45°C
TVJ= 125°C
TVJ= 45°C
TVJ= 125°C
© 2007 IXYS All rights reserved 3 - 4
VUM 24-05N
20070605c
IXYS reserves the right to change limits, test conditions and dimensions
234567
0
10
20
30
40
50
60
70
80
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
s
gfs
0 20406080100
0
20
40
60
80
0.51.01.52.02.5
0
20
40
60
80
100
120
10 100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20
0.1
1
10
100
0 100 200 300 400
0
2
4
6
8
10
12
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
A/μs
VDS
V
C
nF
nC
°C
BVDSS
TVJ
norm.
°C
VGS
Qg
V
norm.
VGS(th)
TVJ
RDS(on)
0246810
0
10
20
30
40
50
60
70
80
ID
VDS
V
A
VGS
ID
V
A
VF
A
TVJ = 25°C
TVJ = 125°C
-diF/dt
V
μC
VGS= 5 V
6 V
10 V
7 V
ID=18A
VDSS
VGS(th)
VDS= 250 V
ID = 18 A
IG = 10 mA
Ciss
Coss
Crss
Qrr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
IF
A
ID
typ.
max.
TVJ=100°C
VR= 350 V
Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized
ID = f (VDS) (MOSFET) ID = f (VGS) (MOSFET) RDS(on) = f (TVJ) (MOSFET)
Fig. 6 Typ. normalized BVDSS = f (TVJ) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (VDS),
VGS(th) = f (TVJ) (MOSFET) characteristics, VGS = f (Qg) (MOSFET) f = 1 MHz (MOSFET)
Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -diF/dt
gfs = f (ID) (MOSFET) voltage drop (Boost Diode) (Boost Diode)
© 2007 IXYS All rights reserved 4 - 4
VUM 24-05N
20070605c
IXYS reserves the right to change limits, test conditions and dimensions
0 50 100 150 200 250
0
1
2
3
4
5
6
7
0.01 0.1 1 10
0.0
0.5
1.0
1.5
2.0
2.5
0 20406080100120
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
40 60 80 100 120
0
1
2
3
4
5
6
0 100 200 300 400 500 600
0
10
20
30
40
50
kW
Pout
ZthJC
K/W
t
-diF/dt
TS
°C
Pout
kW
0 100 200 300 400 500 600
2
4
6
8
10
12
14
16
18
0.1
0.3
0.5
0.7
0.9
VFR
μs
-diF/dt
IRM
A
20 40 60 80 100 120 140 160
0.4
0.6
0.8
1.0
1.2
1.4
TJ
Kt
Vin = 230 V/50 Hz
TS =85°C
Vin = 115 V/60 Hz
Pout
Vin (RMS)
kW TS =85°C
fc = 40 kHz
fc = 80 kHz
V
fc = 80 kHz
Vin = 230 V/50 Hz
Vin = 115 V/60 Hz
°C A/μs
A/μs
Rectifier Diodes
Boost Diode
MOSFET
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
typ.
max.
IRM
Qr
IF = 37 A
IF = 74 A
IF = 37 A
IF = 18.5 A
typ.
max.
V
fc
diF/dt
kHz
A/μs
s
VFR
tFR
tFR
μs
trr
TVJ=100°C
VR= 350 V
TVJ=100°C
VR= 350 V
VUM 24
Fig. 12 Peak reverse current versus Fig. 13 Dynamic parameters versus Fig. 14 Recovery time versus
-diF/dt (Boost Diode) junction temperature (Boost Diode) -diF/dt (Boost Diode)
Fig. 15 Peak forward voltage versus Fig. 16 Output power versus carrier Fig. 17 Output power versus
-diF/dt (Boost Diode) frequency (Module) mains voltage
Fig. 18 Output power versus Fig. 19 Transient thermal impedance junction to case for all devices
heatsink temperature (Module)
T
VJ
