MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4m General Description Features The MDU1511 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 100A @VGS = 10V RDS(ON) < 2.4 m @VGS = 10V < 3.3 m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G PowerDFN56 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS 20 V o TC=25 C 100.0 o TC=70 C Continuous Drain Current (1) o 94.0 ID TA=25 C 36.1(3) TA=70oC 28.8(3) IDM Pulsed Drain Current o TC=25 C TC=70 C o Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range 400 A 78.1 o Power Dissipation A 50.0 PD TA=25 C 5.5(3) TA=70oC 3.5(3) EAS 287 TJ, Tstg -55~150 Symbol Rating RJA 22.7 RJA 50.0 RJC 1.8 W mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient ( T 10s ) (1) Thermal Resistance, Junction-to-Ambient ( Steady State ) (1) Thermal Resistance, Junction-to-Case Jul. 2019. Version 1.5 1 Unit o C/W MagnaChip Semiconductor Ltd. MDU1511 - Single N-Channel Trench MOSFET 30V Part Number Temp. Range Package Packing Quantity Rohs Status MDU1511RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.8 2.7 - - 1 - - 5 VGS = 20V, VDS = 0V - - 0.1 VGS = 10V, ID = 28A - 2.0 2.4 - 2.9 3.5 VGS = 4.5V, ID = 24A - 2.7 3.3 VDS = 5V, ID = 10A - 45 - 38.8 51.8 64.8 18.7 25.0 31.3 - 9.9 - - 9.4 - 2510 3347 4184 Drain Cut-Off Current IDSS Gate Leakage Current IGSS Drain-Source ON Resistance Forward Transconductance VDS = 30V, VGS = 0V TJ=55oC TJ=125oC RDS(ON) gfs V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15V, ID = 28A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 246 328 410 Output Capacitance Coss 490 653 817 Turn-On Delay Time td(on) - 11.2 - - 23.2 - - 45.6 - - 18.6 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15V, ID = 28A, RG = 3.0 tf nC pF ns Rg f=1 MHz - 1.0 2.0 VSD IS = 28A, VGS = 0V - 0.8 1.1 V - 33.8 50.7 ns - 22.3 33.5 nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 28A, dl/dt = 100A/s Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 42.0A, VDD = 27V, VGS = 10V 3. T < 10sec. Jul. 2019. Version 1.5 2 MagnaChip Semiconductor Ltd. MDU1511 - Single N-Channel Trench MOSFET 30V Ordering Information MDU1511 - Single N-Channel Trench MOSFET 30V 50 4 Drain-Source On-Resistance [m] VGS = 10V 4.0V ID, Drain Current [A] 40 5.0V 8.0V 3.0V 30 20 10 0 0.0 0.5 1.0 1.5 3 VGS = 4.5V VGS = 10V 2 1 0 2.0 10 20 VDS, Drain-Source Voltage [V] 30 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 30 1.8 Notes : Notes : 1. VGS = 10 V 2. ID = 28.0 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 50 ID, Drain Current [A] 1.4 1.2 1.0 ID = 28.0A 25 20 15 10 5 0.8 TA = 25 0 0.6 -50 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 100 20 Notes : VDS = 5V 10 12 TA=25 8 25 -IS [A] ID, Drain Current [A] 16 1 4 0.1 0.3 0 0 1 2 3 4 5 Fig.5 Transfer Characteristics Jul. 2019. Version 1.5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -VSD [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. 4000 Note : ID = 28A VDS = 15V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 3500 VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 3000 6 4 2500 2000 1500 Notes ; 1000 1. VGS = 0 V 2. f = 1 MHz Coss 2 500 Crss 0 0 0 5 10 15 20 25 30 35 40 45 50 0 55 5 10 15 20 25 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 3 10 150 140 130 10 us 120 2 110 100 us Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 1 10 10 ms 100 ms DC 0 10 Single Pulse TJ=Max Rated -1 0 70 60 50 40 10 1 10 80 20 -1 10 90 30 o TC=25 C 10 100 0 25 2 10 10 50 75 100 125 150 TA, Case Temperature [] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current Vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 0 10 D=0.5 0.2 0.1 -1 10 0.05 o ZJC( C/W), Thermal Response 10 # Notes : Duty Factor, D=t1/t2 0.02 0.01 PEAK TJ = PDM * ZJC + TC single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jul. 2019. Version 1.5 4 MagnaChip Semiconductor Ltd. MDU1511 - Single N-Channel Trench MOSFET 30V 10 PowerDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Dimension MILLIMETERS Min Max A 0.90 1.10 b 0.33 0.51 C 0.20 0.34 D1 4.50 5.10 D2 - 4.22 E 5.90 6.30 E1 5.50 6.10 E2 - 4.30 e Jul. 2019. Version 1.5 5 1.27BSC H 0.41 0.71 K 0.20 - L 0.51 0.71 0 12 MagnaChip Semiconductor Ltd. MDU1511 - Single N-Channel Trench MOSFET 30V Package Dimension MDU1511 - Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jul. 2019. Version 1.5 6 MagnaChip Semiconductor Ltd.