GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
MASWSS0181
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V2
1
RoHS
Compliant
Features
Low Voltage Operation: 2.5 V
Harmonics: <-67 dBc at +34 dBm & 1 GHz
Low Insertion Loss: 0.40 dB at 1 GHz
High Isolation: 20 dB at 2 GHz
0.5 micron GaAs PHEMT Process
Lead-Free SOT-26 Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
260°C Reflow Compatible
RoHS* Compliant Version of MASWSS0006
Description
M/A-COM’s MASWSS0181 is a GaAs PHEMT
MMIC single pole two throw (SPDT) high power
switch in a lead-free SOT-26 package. The
MASWSS0181 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are
required.
Typical applications are for GSM and DCS handset
systems that connect separate transmit and receive
functions to a common antenna, as well as other
related handset and general purpose applications.
This part can be used in all systems operating up to
3 GHz requiring high power at low control voltage.
The MASWSS0181 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process
features full passivation for performance and
reliability.
Ordering Information
Part Number Package
MASWSS0181 Bulk Packaging
MASWSS0181TR 1000 piece reel
MASWSS0181TR-3000 3000 piece reel
MASWSS0181SMB Sample Test Board
Note: Reference Application Note M513 for reel size
information.
Pin No. Pin Name Description
1 RF1 RF Port 1
2 GND RF Ground
3 RF2 RF Port 2
4 V2 Control 2
5 RFC RF Common Port
6 V1 Control 1
Pin Configuration
Functional Schematic
PIN 1
39 pF
39 pF
39 pF
RFC
V1
PIN 6
RF1
GND
V2
RF2
100pF
100pF
100pF
Parameter Absolute Maximum
Input Power
(0.5 - 3 GHz, 2.5 V Control)
+38 dBm
Voltage ± 8.5 volts
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings 1,2
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM does not recommend sustained operation near
these survivability limits.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
MASWSS0181
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V2
2
RoHS
Compliant
Electrical Specifications: TA = 25°C, Vc = 0 V/2.5 V, Z0 = 50 Ohms3
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss4 DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
0.40
0.50
0.75
0.65
Isolation DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
dB
dB
23.0
26
20
16
Return Loss DC – 2 GHz
2 - 3 GHz
dB
dB
20
16
IP3 Two Tone, +26 dBm/tone, 5 MHz Spacing
> 50 MHz
dBm 57
P0.1dB dBm 39
2nd Harmonic 1 GHz, PIN = +34 dBm dBc -75
3rd Harmonic 1 GHz, PIN = +34 dBm dBc -75 -67
Trise, Tfall 10% to 90% RF, 90% to 10% RF µS 0.04
Ton, Toff 50% control to 90% RF, and 50% control to 10% RF µS 0.06
Transients In Band mV 50
Control Current µA 50
3. For positive voltage control, external DC blocking capacitors are required on all RF ports.
4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 3 GHz.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
V1 V2 ANT– RF1 ANT - RF2
1 0 On Off
0 1 Off On
Truth Table 5,6
5. Differential voltage, V(state 1) - V(state 0), must be +2.5 V
minimum and must not exceed +8 V.
6. 0 = -5 V to 2.5 V, 1 = -2.5 V to +5 V
GaAs SPDT 2.5 V High Power Switch
DC - 3.0 GHz
MASWSS0181
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V2
3
RoHS
Compliant
Typical Performance Curves vs. Temperature, 100 pF blocking capacitors
Insertion Loss vs. Frequency Isolation vs. Frequency
-90
-85
-80
-75
-70
-65
-60
2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vc (V)
Relative Harmonic (dBc)
+25°C +85°C -40°C
-90
-85
-80
-75
-70
-65
-60
2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vc (V)
Relative Harmonic (dBc)
+25°C +85°C -40°C
0.0
0.2
0.4
0.6
0.8
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Insertion Loss (dB)
+25°C +85°C -40°C
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Isolation (dB)
+25°C +85°C -40°C
Lead-Free SOT-26 Plastic Package
Reference Application Note M538 for lead-free solder reflow
recommendations.
2nd Harmonic vs. Control Voltage,
Pin = 34 dBm CW, 1 GHz
3rd Harmonic vs. Control Voltage,
Pin = 34 dBm CW, 1 GHz