PSMG150/01 - Powersem - Product.Network

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PACTM 2

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

*NTC optional

Caution: These Devices are sensitive

to electrostatic discharge. Users

should observe proper ESD handling

precautions.

VDSS = 100 V

ID25 = 165 A

RDS(on) = 8 mΩΩ

ΩΩ

Ω

trr < 250 ns

Power MOSFET

in ECO-PAC 2

Single MOSFET Die

Features

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 3000V electrical isolation

• Low drain to tab capacitance(< 25pF)

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic Rectifier

• UL certified, E 148688

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density

MOSFET

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25°C to 150°C 100 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ100 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC = 25°C (MOSFET chip capability) 165 A

ID(RMS) External lead (current limit) 76 A

IDM TC = 25°C 1) 720 A

IAR TC = 25°C 180 A

EAR TC = 25°C 60 mJ

EAS TC = 25°C 3 J

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns

TJ ≤ 150°C, RG = 2 Ω

PDTC = 25°C 400 W

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 3 mA 100 V

VGS(th) VDS = VGS, ID = 8 mA 2.0 4.0 V

IGSS VGS = ±20 V, VDS = 0 ±100 nA

IDSS VDS = VDSS; TJ = 25°C 100 µA

VGS = 0 V; TJ = 125°C 2 mA

RDS(on) VGS = 10 V, ID = 90 A 1) 8mΩ

gfs VDS = 10 V; ID = 90 A 2) 60 90 S

Ciss 9400 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 pF

Crss 1660 pF

td(on) 50 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A 90 ns

td(off) RG = 1 Ω (External) 140 ns

tf65 ns

Qg(on) 400 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 90 A 65 nC

Qgd 220 nC

RthJC 0.30 K/W

RthCK with heatsink compound (0.42 K/m.K; 50 µm) 0.2 K/W

PSMG 150/01*

I K10/11

X18

L N 8/9

K13 K15

http://store.iiic.cc/

PSMG 150/01

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

Package style and outline

Dimensions in mm (1mm = 0.0394“)

Module

Symbol Conditions Maximum Ratings

TVJ -40...+150 °C

Tstg -40...+125 °C

VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~

MdMounting torque (M4) 1.5 - 2.0 Nm

14 - 18 lb.in.

aMax. allowable acceleration 50 m/s2

Symbol Conditions Characteristic Values

min. typ. max.

dSCreepage distance on surface (Pin to heatsink) 11.2 m m

dAStrike distance in air (Pin to heatsink) 11.2 m m

Weight 24 g

Source-Drain Diode

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 180 A

ISM Repetitive; 720 A

pulse width limited by TJM

VSD IF = 100A, VGS = 0 V, 1) 1.5 V

trr 250 ns

QRM IF = 50A,-di/dt = 100 A/µs, VR = 100 V 1.1 µC

IRM 13 A

Note: 1) Pulse width limited by TJM

2) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Temperature Sensor NTC

Symbol Conditions Characteristic Values

min. typ. max.

R25 T = 25°C 4.75 5.0 5.25 kΩ

B25/50 3375 K

http://store.iiic.cc/

PSMG 150/01

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

100

VDS - Volts

012345

ID - Amperes

100

150

200

VGS - Volts

2468

ID - Amperes

100

TJ - Degrees C

25 50 75 100 125 150

RDS(ON) - Normalized

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID - Amperes

0 50 100 150 200

RDS(ON) - Normalized

0.8

1.0

1.2

1.4

1.6

1.8

VDS - Volts

0.0 0.5 1.0 1.5 2.0

ID - Amperes

100

150

200

VGS = 10V

VGS=10V

TJ=125OC

TJ=25OC

TJ = 25oC

ID=180A

TJ = 25OC

TJ = 125oC

VGS=10V

TJ = 125OC

VGS=10V

VGS=15V

VGS=10V

VGS=15V

ID=90A

Lead Current Limit

Figure 3. RDS(on) normalized to 15A/25OC vs. ID

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC

Figure 4. RDS(on) normalized to 15A/25OC vs. TJ

http://store.iiic.cc/

PSMG 150/01

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2003 POWERSEM reserves the right to change limits, test conditions and dimensions

Pulse Width - Seconds

10-3 10-2 10-1 100101

R(th)JC - K/W

0.02

0.04

0.06

0.08

0.20

0.40

0.01

0.10

VDS - Volts

0 5 10 15 20 25 30 35 40

Capacitance - pF

1000

10000

VSD - Volts

0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID - Amperes

100

125

150

175

200

Gate Charge - nC

0 50 100 150 200 250 300 350 400

VGS - Volts

Crss

Coss

Ciss

TJ=25OC

VDS=50V

ID=90A

IG=10mA

F = 100kHz

VDS - Volts

110100

ID - Amperes

100

TC = 25OC

10 ms

1 ms

200

VGS= 0V

TJ=125OC

Figure 7. Gate Charge Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the Intrinsic Diode

Figure 11. Typical Transient Thermal Resistance

Figure 10. Forward Bias Safe Operating Area

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