FEATURES
● Metal-Semiconductor junction with gard ring
● Epitaxial construction
● Low forward voltage drop
● High current capability
● The plastic material carries UL recognition 94V-0
● For use in low vlotage, high frequency inverters,
MECHANICAL DATA
●Case： Molded Plastic
●Polarity: lndicated by cathode band
●Weight: 0.002 ounces,0.064 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS SYMBOL UNIT
Maximum Recurrent Peak Reverse Voltage VRRM V
Maximum RMS Voltage VRMS V
Maximum DC Blocking Voltage VDC V
Maximum Average Forward
Rectified Current @TA =75 ℃
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC VFV
Maximum Forward Voltage at 3.0A DC VFV
Maximum DC Reverse Current @TJ=25℃
at Rated DC Bolcking Voltage @TJ=100℃
Typical Junction Capacitance (Note1) CJpF
Typical Thermal Resistance (Note2) RθJA ℃/W
Operating Temperature Range TJ℃
Storage Temperature Range TSTG ℃
~ 153 ~
A
1.0I(AV) A
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
-55 to +150
80
free wheeling, and polarity protection applications
IR
40IFSM
14 21 28
20 30 40
SM5817 SM5818 SM5819
20 30 40
SM5817 thru SM5819
REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 1.0 Amperes
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
-55 to +150
0.450 0.550
0.750 0.875
110
mA
0.600
10
0.900
1.0
SMA
.055(1.40)
.062(1.60) .114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.002(.051)
.008(.203)
.208(5.28)
.188(4.80)
.079(2.00)
.103(2.62)
.060(1.52)
.030(0.76)
RATING AND CHARACTERTIC CURVES
SM5817 thru SM5819
~ 154 ~
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
(AMPERES
）
40
30
20
10
0100
5020101 2 5
PULSE WIDTH 8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
FIG. 1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
AMBIENT TEMPERATURE
℃
25 50 75 100 125 150 175
1.00
0.75
0.5
0.25
0
FIG.3 – TYPICAL JUNCTION CAPACITANCE
CAPACITANCE, (pF)
REVERSE VOLTAGE, (VOLTS)
1000
1
100
100
10
14
TJ= 25°C f = 1 MHz
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
FIG.4-TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
(A)
INSTANTANEOUS FORWARD VOLTAGE, (VOLTS)
1.0
0.1
10
0.2 0.4 0.80.6 1.0 1.2
0
TJ = 25°C
PULSE WIDTH 300us
1N5819
1N5817
1N5818
