FTD1011
No.6593-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
Features
•Low ON-resistance.
•2.5V drive.
•Mount height of 1.1mm.
•Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25 °C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--3 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --15 A
Allowable Power Dissipation PD
Mounted on a ceramic board (1000mm2✕0.8mm)1unit
0.8 W
Total Dissipation PT
Mounted on a ceramic board (1000mm2✕0.8mm)
1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V
Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 µA
Gate-to-Sourse Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--3A 6 8.8 S
RDS(on)1 ID=--3A, VGS=--4V 50 65 mΩ
Static Drain-to-Sourse on-State Resistance RDS(on)2 ID=--2A, VGS=--2.5V 68 96 mΩ
Marking : D1011 Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6593
FTD1011
Package Dimensions
unit : mm
2155A
[FTD1011]
71400 TS IM TA-2725
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
6.4
3.0 0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
FTD1011
No.6593-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise T ime trSee specified Test Circuit 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 65 ns
Fall Time tfSee specified Test Circuit 75 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 23 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 1.6 nC
Gate-to-Drain ”Miller” Charge Qgd V DS=--10V, VGS=--10V, ID=--3A 2.5 nC
Diode Forward Voltage VSD IS=--3A, VGS=0 --0.8 --1.5 V
Switching Time Test Circuit Electrical Connection
PW=10µs
D.C.≤1%
0V
--4V
VIN
P.G 50Ω
G
S
ID= --3A
RL=3.3Ω
VDD= --10V
VOUT
VIN
D
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
Ambient Temperature, Ta -- °C
160
140
100
120
80
60
40
20
160120 14010060 804020
0
--40 --20--60
0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
160
100
140
120
40
60
0
20
--2 --40 --6 --10--8
0
0
ID -- VGS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--6
--5
--4
--3
--2
--1
--0.4 --1.4--1.2 --2.0--1.8
ID -- VDS
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
--6
--4
--5
--3
--2
--1
--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0
IT02298 IT02299
IT02300 IT02301
00--0.7
80
--0.2 --0.6 --1.6--1.0--0.8
--2.5V
--2.0V
Ta=25°C
VGS= --1.5V
ID= --2A, VGS= --2.5V
ID= --3A, VGS= --4.0V
VDS=10V
--25°C
25°C
Ta=75°C
ID= --2A --3A
--3.0V
--4.0V
D1 S1 S1 G1
D2 S2 S2 G2
FTD1011
No.6593-3/4
1.2
1.0
0.8
0.6
0.4
0.2
00 20 40 60 80 100 120 140 160
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
2
3
2
3
5
7
2
3
5
7
2
3
5
7
23 5723 5723 57 23
100ms
<10µs
10ms
1ms
--10
--1.0
--0.1
--0.01
--0.01 --0.1 --1.0 --10
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Operation in this
area is limited by RDS(on)
DC operation
23 5723 57
t
d
(on)
td(off)
tr
tf
100
7
2
3
5
7
2
3
5
10
--0.1 --1.0
SW Time -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
VDD= --10V
VGS= --4V
IT02306
IT02308
IT02307
1.0
0.8
0.6
0.4
0.2
00 0.2 0.4 0.6 0.8 1.0
PD(FET1) -- PD(FET2)
Allowable Power Dissipation, PD(FET2) -- W
Allowable Power Dissipation, PD
(FET1)
-- W
IT02309
Mounted on a ceramic board(1000mm
2
✕0.8mm)
IDP= --15A
Diode Forward Voltage, VSD -- V
--0.001
--10
--0.3 --0.6 --1.0--0.4
yfs -- ID
Forward Transfer Admittance, yfs -- S
Drain Current, ID -- A
0.1 --1.0--0.1--0.01 --1023 57 23 57 23 57
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
Drain-to-Source Voltage, VDS -- V
1000
0 --4 --6--2 --10 --12--8 --14 --16 --20
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Total Gate Charge, Qg -- nC
--10
--3
--2
--1
0
--4
--5
62418 20 22141021216840
IT02302 IT02303
IT02304 IT02305
2
10
5
2
1.0
7
3
5
2
7
3
100
2
3
5
7
2
3
5
7
--18
--0.01
--1.0
--0.1
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
--0.5 --0.7 --0.8 --0.9--0.2
--8
--7
--6
--9
Foward Current, IF -- A
IF -- VSD
VGS=0
--25°C
25°C
Ta=75°C
VDS=10V
Ta= --25°C
25°C
75°C
f=1MHz VDS= --10V
ID= --3A
Mounted on a ceramic board(1000mm
2
✕0.8mm)
Total dissipation
1unit
Ciss
Crss
Coss
Ta=25°C
Single pulse
Mounted on a ceramic board(1000mm
2
✕0.8mm)1unit
ID= --3A
FTD1011
No.6593-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS
